Christophe Gaquière

23 papers B 1C 1Journal 16Unranked 5
YearRankTypeTitle / Venue / Authors
2025 — conf
A Heterogeneous Embedded Platform for AI-Based Protocol Identification.
ARC
Aymane Kharchouf, Smaïl Niar, Virginie Deniau, Rihab Hmida, Christophe Gaquière
2024 C conf
Trusted SMEs for Sustainable Growth of Europeans Economical Backbone to Strengthen the Digital Sovereignty: The KDT Resilient Trust Project.
DSD
Hassan Aboushady, Noemie Beringuier-Boher, Kelly Burke, Philippe Dallemagne, Mario De Biase, Manuel Di Frangia, Virginie Deniau, Enrico Ferrari, Christophe Gaquière, Dominique Morche, Fabio Patrone, Stefano Pesci, Luigi Pomante, Andries Stam, Vincenzo Stornelli, Haralampos-G. Stratigopoulos, Mottaqiallah Taouil, Emmanuel Vaumorin, Jonathan Villain, Sander Steeghs
2023 J jnl
Drone Detection and Tracking Using RF Identification Signals.
Sensors
Driss Aouladhadj, Ettien Lazare Kpre, Virginie Deniau, Aymane Kharchouf, Christophe Gransart, Christophe Gaquière
2022 B conf
Special Session on RF/5G Test.
ETS
William R. Eisenstadt, Mark Roos, Devin Morris, José Luis González-Jiménez, Christopery Mounet, Manuel J. Barragán, Gildas Léger, Florent Cilici, Estelle Lauga-Larroze, Salvador Mir, Sylvain Bourdel, Marc Margalef-Rovira, Issa Alaji, Haitham Ghanem, Guillaume Ducournau, Christophe Gaquière
2022 J jnl
Temperature compensated power detector towards power consumption optimization in 5G devices.
Microelectron. J.
Issa Alaji, Etienne Okada, Daniel Gloria, Guillaume Ducournau, Christophe Gaquière
2021 J jnl
Design of zero bias power detectors towards power consumption optimization in 5G devices.
Microelectron. J.
Issa Alaji, Walid Aouimeur, Haitham Ghanem, Etienne Okada, Sylvie Lépilliet, Daniel Gloria, Guillaume Ducournau, Christophe Gaquière
2021 — conf
mm-Wave Single-Pole Double-Throw switches: HBT- vs MOSFET-based designs.
NEWCAS
Marc Margalef-Rovira, Christophe Gaquière, Antonio Augusto Lisboa de Souza, Loic Vincent, Manuel J. Barragán, Emmanuel Pistono, Florence Podevin, Philippe Ferrari
2021 J jnl
mm-Wave Through-Load Element for On-Wafer Measurement Applications.
IEEE Trans. Circuits Syst. I Regul. Pap.
Marc Margalef-Rovira, Olivier Occello, Abdelhalim A. Saadi, Vanessa Avramovic, Sylvie Lépilliet, Loic Vincent, Manuel J. Barragán, Emmanuel Pistono, Sylvain Bourdel, Christophe Gaquière, Philippe Ferrari
2020 J jnl
Extraction of nonlinear Taylor series coefficients for GaN HEMT over multi-bias condition.
Microelectron. J.
Mohammad Abdul Alim, A. Tahsin, Ali A. Rezazadeh, Christophe Gaquière
2020 J jnl
Large-area femtosecond laser milling of silicon employing trench analysis.
CoRR
Arun Bhaskar, Justine Philippe, Flavie Braud, Etienne Okada, Vanessa Avramovic, Jean-François Robillard, Cédric Durand, Daniel Gloria, Christophe Gaquière, Emmanuel Dubois
2020 J jnl
Substrate engineering of inductors on SOI for improvement of Q-factor and application in LNA.
CoRR
Arun Bhaskar, Justine Philippe, Vanessa Avramovic, Flavie Braud, Jean-François Robillard, Cédric Durand, Daniel Gloria, Christophe Gaquière, Emmanuel Dubois
2020 J jnl
Temperature Dependence of the Taylor Series Coefficients and Intermodulation Distortion Characteristics of GaN HEMT.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Mohammad Abdul Alim, Mayahsa M. Ali, Ali A. Rezazadeh, Christophe Gaquière
2020 — conf
mm-Wave Through-Load Switch for in-situ Vector Network Analyzer on a 55-nm BiCMOS Technology.
NEWCAS
Marc Margalef-Rovira, Abdelhalim A. Saadi, Sylvain Bourdel, Manuel J. Barragán, Emmanuel Pistono, Christophe Gaquière, Philippe Ferrari
2018 — conf
450 GHz f
BCICTS
Alexis Gauthier, Julien Borrel, Pascal Chevalier, Grégory Avenier, A. Montagné, M. Juhel, R. Duru, L.-R. Clément, C. Borowiak, Michel Buczko, Christophe Gaquière
2015 J jnl
Characterization and analysis of electrical trap related effects on the reliability of AlInN/GaN HEMTs.
Microelectron. Reliab.
Sébastien Petitdidier, Fanny Berthet, Yannick Guhel, Jean-Lionel Trolet, Philippe Mary, Christophe Gaquière, Bertrand Boudart
2014 — conf
1-20 Ghz kΩ-range BiCMOS 55 nm reflectometer.
NEWCAS
Pietro M. Ferreira, Cora Donche, Kamel Haddadi, Tuami Lasri, Gilles Dambrine, Christophe Gaquière, Thomas Quemerais, Daniel Gloria
2012 J jnl
A 10-MHz GaN HEMT DC/DC Boost Converter for Power Amplifier Applications.
IEEE Trans. Circuits Syst. II Express Briefs
Florent Gamand, Ming Dong Li, Christophe Gaquière
2012 J jnl
Annihilation of electrical trap effects by irradiating AlGaN/GaN HEMTs with low thermal neutrons radiation fluence.
Microelectron. Reliab.
Fanny Berthet, Yannick Guhel, Hamid Gualous, Bertrand Boudart, Jean-Lionel Trolet, Marc Piccione, Christophe Gaquière
2011 J jnl
Characterization of the self-heating of AlGaN/GaN HEMTs during an electrical stress by using Raman spectroscopy.
Microelectron. Reliab.
Fanny Berthet, Yannick Guhel, Hamid Gualous, Bertrand Boudart, Jean-Lionel Trolet, Marc Piccione, Christophe Gaquière
2009 J jnl
Deep levels and nonlinear characterization of AlGaN/GaN HEMTs on silicon carbide substrate.
Microelectron. J.
Malek Gassoumi, Jean-Marie Bluet, Christophe Gaquière, Gérard Guillot, Hassen Maaref
2006 J jnl
Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates.
Microelectron. J.
Nabil Sghaier, M'Hamed Trabelsi, Noureddine Yacoubi, Jean-Marie Bluet, Abdelkader Souifi, Gérard Guillot, Christophe Gaquière, J. C. DeJaeger
2004 J jnl
Hot carrier aging degradation phenomena in GaN based MESFETs.
Microelectron. Reliab.
Fabiana Rampazzo, Roberto Pierobon, D. Pacetta, Christophe Gaquière, Didier Théron, Bertrand Boudart, Gaudenzio Meneghesso, Enrico Zanoni
2003 J jnl
Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates.
Microelectron. Reliab.
Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, André Touboul, Christophe Gaquière, A. Minko, Michael J. Uren