Chenyue Ma

13 papers A* 2Journal 4Unranked 7
YearRankTypeTitle / Venue / Authors
2023 J jnl
Incremental 3-D Global Routing Considering Cell Movement and Complex Routing Constraints.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Peng Zou, Zhijie Cai, Zhifeng Lin, Chenyue Ma, Jun Yu, Jianli Chen
2022 A* conf
CNN-inspired analytical global placement for large-scale heterogeneous FPGAs.
DAC
Huimin Wang, Xingyu Tong, Chenyue Ma, Runming Shi, Jianli Chen, Kun Wang, Jun Yu, Yao-Wen Chang
2021 — conf
CongestNN: An Bi-Directional Congestion Prediction Framework for Large-Scale Heterogeneous FPGAs.
ASICON
Chenyue Ma, Yifeng Xiao, Sifei Wang, Jun Yu, Jianli Chen
2021 A* conf
Late Breaking Results: Incremental 3D Global Routing Considering Cell Movement.
DAC
Peng Zou, Zhifeng Lin, Chenyue Ma, Jun Yu, Jianli Chen
2017 — conf
A universal approach for signal dependent circuit reliability simulation.
ASICON
Lining Zhang, Chenyue Ma, Mansun Chan
2016 — conf
Concurrent device/circuit aging for general reliability simulations.
ISIC
Haoyuan Jiang, Chenyue Ma, Lining Zhang, Mansun Chan
2015 — conf
Investigation of nitrogen enhanced NBTI effect using the universal prediction model.
IRPS
Peng Wu, Chenyue Ma, Lining Zhang, Xinnan Lin, Mansun Chan
2013 J jnl
Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions.
IEICE Trans. Electron.
Chenyue Ma, Hans Jürgen Mattausch, Masataka Miyake, Takahiro Iizuka, Kazuya Matsuzawa, Seiichiro Yamaguchi, Teruhiko Hoshida, Akinori Kinoshita, Takahiko Arakawa, Jin He, Mitiko Miura-Mattausch
2011 J jnl
A physical based model to predict performance degradation of FinFET accounting for interface state distribution effect due to hot carrier injection.
Microelectron. Reliab.
Chenyue Ma, Lining Zhang, Chenfei Zhang, Xiufang Zhang, Jin He, Xing Zhang
2010 — conf
Asymmetric issues of FinFET device after hot carrier injection and impact on digital and analog circuits.
ISQED
Chenyue Ma, Hao Wang, Xiufang Zhang, Frank He, Yadong He, Xing Zhang, Xinnan Lin
2010 J jnl
Temperature dependence of the interface state distribution due to hot carrier effect in FinFET device.
Microelectron. Reliab.
Chenyue Ma, Hao Wang, Chenfei Zhang, Xiufang Zhang, Jin He, Xing Zhang
2009 — conf
A unified FinFET reliability model including high K gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability.
ISQED
Chenyue Ma, Bo Li, Lining Zhang, Jin He, Xing Zhang, Xinnan Lin, Mansun Chan
2008 — conf
Study on the Si-Ge Nanowire MOSFETs with the Core-Shell Structure.
ISQED
Yue Fu, Jin He, Feng Liu, Jie Feng, Chenyue Ma, Lining Zhang