Changhwan Shin

23 papers C 1Journal 20Unranked 2
YearRankTypeTitle / Venue / Authors
2025 J jnl
Device Design Guidelines to Boost Up AC Performance of CFET (Complementary Field-Effect-Transistor)-Based Inverter.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Jaehyuk Lim, Donghwan Han, Juho Sung, Seokchan Yoon, Sanghyun Kang, Gwon Kim, Hyoung Won Baac, Changhwan Shin
2025 J jnl
Learning hidden relationship between environment and control variables for direct control of automated greenhouse using Transformer-based model.
Comput. Electron. Agric.
Junseo Lee, Seongil Im, Jae-Seung Jeong, Taek Sung Lee, Soo Hyun Park, Changhwan Shin, Hyunsu Ju, Hyung-Jun Kim
2025 J jnl
Study of 3-D Line Edge Roughness (LER) in Vertical Channel Array Transistor for DRAM.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Jaehyuk Lim, Seokchan Yoon, Juho Sung, Sanghyun Kang, Gwon Kim, Hyoung Won Baac, Changhwan Shin
2024 J jnl
Column Row Convolutional Neural Network: Reducing Parameters for Efficient Image Processing.
Neural Comput.
Seong-il Im, Jae-Seung Jeong, Junseo Lee, Changhwan Shin, Jeong Ho Cho, Hyunsu Ju
2023 J jnl
Comparative Study of Novel u-Shaped SOI FinFET Against Multiple-Fin Bulk/SOI FinFET.
IEEE Access
Myoungsu Son, Juho Sung, Hyoung Won Baac, Changhwan Shin
2022 J jnl
GAN-Based Framework for Unified Estimation of Process-Induced Random Variation in FinFET.
IEEE Access
Taeeon Park, Jihwan Kwak, Hongjoon Ahn, Jinwoong Lee, Jaehyuk Lim, Sangho Yu, Changhwan Shin, Taesup Moon
2022 J jnl
Impact of Chamber/Annealing Temperature on the Endurance Characteristic of Zr: HfO2 Ferroelectric Capacitor.
Sensors
Yejoo Choi, Changwoo Han, Jaemin Shin, Seungjun Moon, Jinhong Min, Hyeonjung Park, Deokjoon Eom, Jehoon Lee, Changhwan Shin
2022 J jnl
Quantitative Evaluation of Line-Edge Roughness in Various FinFET Structures: Bayesian Neural Network With Automatic Model Selection.
IEEE Access
Sangho Yu, Sang Min Won, Hyoung Won Baac, Donghee Son, Changhwan Shin
2022 J jnl
Strain-Dependent Photoacoustic Characteristics of Free-Standing Carbon-Nanocomposite Transmitters.
Sensors
Muhammad Faraz, Muhammad Awais Abbasi, Donghee Son, Changhwan Shin, Kyu-Tae Lee, Sang Min Won, Hyoung Won Baac
2021 J jnl
Abruptly-Switching MoS₂-Channel Atomic-Threshold-Switching Field-Effect Transistor With AgTi/HfO₂-Based Threshold Switching Device.
IEEE Access
Sojin Jeong, Sangwoo Han, Ho-Jun Lee, Deokjoon Eom, Gisu Youm, Yejoo Choi, Seungjun Moon, Kyungjin Ahn, Jinju Oh, Changhwan Shin
2021 J jnl
Probabilistic Artificial Neural Network for Line-Edge-Roughness-Induced Random Variation in FinFET.
IEEE Access
Jaehyuk Lim, Jinwoong Lee, Changhwan Shin
2020 J jnl
Machine Learning (ML)-Based Model to Characterize the Line Edge Roughness (LER)-Induced Random Variation in FinFET.
IEEE Access
Jaehyuk Lim, Changhwan Shin
2017 — conf
Layout engineering to suppress hysteresis of negative capacitance FinFET.
ICICDT
Eunah Ko, Jaesung Jo, Changhwan Shin, Bich-Yen Nguyen
2016 J jnl
Amorphous Indium Zinc Oxide Thin-Film Transistor with Steep Subthreshold Slope by Negative Capacitance.
IEICE Trans. Electron.
Karam Cho, Jaesung Jo, Changhwan Shin
2016 J jnl
Design Optimization for Process-Variation-Tolerant 22-nm FinFET-Based 6-T SRAM Cell with Worst-Case Sampling Method.
IEICE Trans. Electron.
Sangheon Oh, Changhwan Shin
2015 J jnl
Impact of the double-patterning technique on the LER-induced threshold voltage variation in symmetric tunnel field-effect transistor.
IEICE Electron. Express
Seulki Park, Ju Han Lee, Changhwan Shin
2014 J jnl
Analysis and modeling for random telegraph noise of GIDL current in saddle MOSFET for DRAM application.
IEICE Electron. Express
Dyukyoung Moon, Hyunseul Lee, Changhwan Shin, Hyungcheol Shin
2014 J jnl
Experimental demonstration of a ferroelectric FET using paper substrate.
IEICE Electron. Express
Changhwan Shin, Gwang-Geun Lee, Dae-Hee Han, Seung-Pil Han, Eisuke Tokumitsu, Shun'ichiro Ohmi, Dong-Joo Kim, Hiroshi Ishiwara, Minseo Park, Seung-Hyun Kim, Wan-Gyu Lee, Yun Jeong Hwang, Byung-Eun Park
2014 J jnl
State-of-the-art silicon device miniaturization technology and its challenges.
IEICE Electron. Express
Changhwan Shin
2013 J jnl
Comparative study in work-function variation: Gaussian vs. Rayleigh distribution for grain size.
IEICE Electron. Express
Hyohyun Nam, Changhwan Shin
2013 J jnl
Effect of double-patterning and double-etching on the line-edge-roughness of multi-gate bulk MOSFETs.
IEICE Electron. Express
In Jun Park, Changhwan Shin
2012 — conf
Quasi-Planar Tri-gate (QPT) bulk CMOS technology for single-port SRAM application.
ISQED
Yasumasa Tsukamoto, Makoto Yabuuchi, Hidehiro Fujiwara, Koji Nii, Changhwan Shin, Tsu-Jae King Liu
2010 C conf
SRAM design in fully-depleted SOI technology.
ISCAS
Borivoje Nikolic, Changhwan Shin, Min Hee Cho, Xin Sun, Tsu-Jae King Liu, Bich-Yen Nguyen