Chadwin D. Young

13 papers Journal 7Unranked 6
YearRankTypeTitle / Venue / Authors
2025 — conf
Investigation of the Impact of Hydrogen Defects on the VT shift in Back-Gate IGZO TFTs.
IRPS
Mohammad Fathi, Md Abdullah Al Mamun, Rodolfo A. Rodriguez-Davila, Shumiya Alam, Jongchan Kim, Tanvir Haider Pantha, Milan Pesic, Manuel Quevedo-Lopez, Kyeongjae Cho, Sourav Dutta, Chadwin D. Young
2024 — conf
Reliability Assessment of a-IGZO and ZnO Thin Film Transistors (TFTs) to X-ray irradiation.
IRPS
Rodolfo A. Rodriguez-Davila, L. Fernandez-Izquierdo, J. Fink, T. Moise, Robert C. Baumann, Bruce Gnade, Manuel Quevedo-Lopez, Chadwin D. Young
2020 — conf
Enhanced Threshold Voltage Stability in ZnO Thin-Film-Transistors by Excess of Oxygen in Atomic Layer Deposited Al2O3.
IRPS
Rodolfo A. Rodriguez-Davila, Richard A. Chapman, Massimo Catalano, Manuel Quevedo-Lopez, Chadwin D. Young
2019 — conf
Positive Bias Instability in ZnO TFTs with Al2O3 Gate Dielectric.
IRPS
Pavel Bolshakov, Rodolfo A. Rodriguez-Davila, Manuel Quevedo-Lopez, Chadwin D. Young
2018 — conf
Electrical characterization of process induced effects on non-silicon devices.
ICICDT
Chadwin D. Young, Pavel Bolshakov, Rodolfo A. Rodriguez-Davila, Peng Zhao, Ava Khosravi, Israel Mejia, Manuel Quevedo-Lopez, Christopher L. Hinkle, Robert M. Wallace
2017 — conf
Advances of the development of a ferroelectric field-effect transistor on Ge(001).
ICICDT
Patrick Ponath, Agham B. Posadas, Yuan Ren, Xiaoyu Wu, Keji Lai, Alex Demkov, Michael Schmidt, Ray Duffy, Paul K. Hurley, Jian Wang, Chadwin D. Young, Rama K. Vasudevan, M. Baris Okatan, Stephen Jesse, Sergei V. Kalinin
2016 J jnl
Experimental Evaluation of Circuit-Based Modeling of the NBTI Effects in Double-Gate FinFETs.
Microelectron. Reliab.
Nebojsa D. Jankovic, Chadwin D. Young
2015 J jnl
Electrical Analysis of High Dielectric Constant Insulator and Metal Gate Metal Oxide Semiconductor Capacitors on Flexible Bulk Mono-Crystalline Silicon.
IEEE Trans. Reliab.
Mohamed T. Ghoneim, Jhonathan P. Rojas, Chadwin D. Young, Gennadi Bersuker, Muhammad Mustafa Hussain
2009 J jnl
Temperature dependent time-to-breakdown (T
Microelectron. Reliab.
N. A. Chowdhury, X. Wang, Gennadi Bersuker, Chadwin D. Young, N. Rahim, Durga Misra
2008 J jnl
A novel approach to characterization of progressive breakdown in high-k/metal gate stacks.
Microelectron. Reliab.
R. Pagano, Salvatore Lombardo, Felix Palumbo, Paul Kirsch, S. A. Krishnan, Chadwin D. Young, Rino Choi, Gennadi Bersuker, James H. Stathis
2007 J jnl
Electrical characterization and analysis techniques for the high-kappa era.
Microelectron. Reliab.
Chadwin D. Young, Dawei Heh, Arnost Neugroschel, Rino Choi, Byoung Hun Lee, Gennadi Bersuker
2005 J jnl
Probing stress effects in HfO
Microelectron. Reliab.
Chadwin D. Young, Gennadi Bersuker, Yuegang Zhao, Jeff J. Peterson, Joel Barnett, George A. Brown, Jang H. Sim, Rino Choi, Byoung Hun Lee, Peter Zeitzoff
2004 J jnl
Effect of Pre-Existing Defects on Reliability Assessment of High-K Gate Dielectrics.
Microelectron. Reliab.
Gennadi Bersuker, Jang H. Sim, Chadwin D. Young, Rino Choi, Peter Zeitzoff, George A. Brown, Byoung Hun Lee, Robert W. Murto