Cezhou Zhao - RankMe

15 papers C 1Journal 3Unranked 11

Year	Rank	Type	Title / Venue / Authors
2022	J	`jnl`	Emerging Optical In-Memory Computing Sensor Synapses Based on Low-Dimensional Nanomaterials for Neuromorphic Networks. Adv. Intell. Syst. Zong Jie Shen, Chun Zhao, Lixing Kang, Yi Sun, Yina Liu, Ivona Z. Mitrovic, Li Yang, Eng Gee Lim, Zhongming Zeng, Cezhou Zhao
2021	—	`conf`	All-solid-state Ion Doping Synaptic Transistor for Bionic Neural computing. ICICDT Q. N. Wang, Chun Zhao, W. Liu, Harm Van Zalinge, Y. N. Liu, L. Yang, Cezhou Zhao
2021	—	`conf`	An environmentally friendly solution-processed ZrLaO gate dielectric for large-area applications in the harsh radiation environment. ICICDT Yuxiao Fang, W. Y. Xu, Ivona Z. Mitrovic, Li Yang, Chun Zhao, Cezhou Zhao
2021	—	`conf`	Artificial synaptic behavior and its improvement of RRAM device with stacked solution-processed MXene layers. ISOCC Zong Jie Shen, Chun Zhao, Yina Liu, Li Yang, Cezhou Zhao
2021	—	`conf`	Bioinspired mechano artificial synapse thin-film transistor. ICICDT Yixin Cao, Chun Zhao, Yina Liu, Li Yang, Harm Van Zalinge, Cezhou Zhao
2021	C	`conf`	Long-Term Memory Performance with Learning Behavior of Artificial Synaptic Memristor Based on Stacked Solution-Processed Switching Layers. ISCAS Zong Jie Shen, Chun Zhao, Ka Lok Man, Yina Liu, Cezhou Zhao
2021	—	`conf`	Resistive switching performance of memristor with solution-processed stacked MO/2D-materials switching layers. ICICDT Zong Jie Shen, Chun Zhao, Ivona Z. Mitrovic, Cezhou Zhao, Yina Liu, Li Yang
2020	—	`conf`	Bionic Sypantic Application of OxRRAM Devices. ISOCC Zong Jie Shen, Chun Zhao, Li Yang, Cezhou Zhao
2020	J	`jnl`	Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices. IEEE Access Yutao Cai, Yang Wang, Ye Liang, Yuanlei Zhang, Wen Liu, Huiqing Wen, Ivona Z. Mitrovic, Cezhou Zhao
2019	—	`conf`	Development of GaN Monolithic Integrated Circuits for Power Conversion. CICC Yung C. Liang, Ruize Sun, Yee-Chia Yeo, Cezhou Zhao
2019	—	`conf`	Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices. ICICDT Yutao Cai, Yang Wang, Miao Cui, Wen Liu, Huiqing Wen, Cezhou Zhao, Ivona Z. Mitrovic, Stephen Taylor, Paul R. Chalker
2019	J	`jnl`	Monolithic GaN Half-Bridge Stages With Integrated Gate Drivers for High Temperature DC-DC Buck Converters. IEEE Access Miao Cui, Ruize Sun, Qinglei Bu, Wen Liu, Huiqing Wen, Ang Li, Yung C. Liang, Cezhou Zhao
2019	—	`conf`	Plasma-Enhanced Combustion-Processed Al2O3 Gate Oxide for In2O3 Thin Film Transistors. ICICDT Qihan Liu, Chun Zhao, Cezhou Zhao, Ivona Z. Mitrovic, Stephen Hall, Wangying Xu, Li Yang, Eng Gee Lim, Q. N. Wang, Y. L. Wei, Yixin Cao
2019	—	`conf`	The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters. ICICDT Miao Cui, Yutao Cai, Qinglei Bu, Wen Liu, Huiqing Wen, Ivona Z. Mitrovic, Stephen Taylor, Paul R. Chalker, Cezhou Zhao
2019	—	`conf`	Voltage step stress: a technique for reducing test time of device ageing. ICICDT Jian Fu Zhang, Zhigang Ji, Meng Duan, Wei Dong Zhang, Cezhou Zhao