Carmine Abbate

18 papers Journal 18
YearRankTypeTitle / Venue / Authors
2018 J jnl
Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests.
Microelectron. Reliab.
Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi
2018 J jnl
Measure of high frequency input impedance to study the instability of power devices in short circuit.
Microelectron. Reliab.
Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi
2018 J jnl
Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation.
Microelectron. Reliab.
Carmine Abbate, Giovanni Busatto, S. Mattiazzo, Annunziata Sanseverino, Luca Silvestrin, D. Tedesco, Francesco Velardi
2017 J jnl
Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit.
Microelectron. Reliab.
Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi
2015 J jnl
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT.
Microelectron. Reliab.
Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo, S. Mattiazzo, Annunziata Sanseverino, Luca Silvestrin, D. Tedesco, Francesco Velardi
2014 J jnl
Thermal damage in SiC Schottky diodes induced by SE heavy ions.
Microelectron. Reliab.
Carmine Abbate, Giovanni Busatto, Paolo Cova, Nicola Delmonte, Francesco Giuliani, Francesco Iannuzzo, Annunziata Sanseverino, Francesco Velardi
2014 J jnl
Turn-off instabilities in large area IGBTs.
Microelectron. Reliab.
Carmine Abbate, Francesco Iannuzzo, Giovanni Busatto, Annunziata Sanseverino, Francesco Velardi, Cesare Ronsisvalle, James Victory
2013 J jnl
Scattering parameter approach applied to the stability analysis of power IGBTs in short circuit.
Microelectron. Reliab.
Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo, Cesare Ronsisvalle, Annunziata Sanseverino, Francesco Velardi
2013 J jnl
Thermal instability during short circuit of normally-off AlGaN/GaN HFETs.
Microelectron. Reliab.
Carmine Abbate, Francesco Iannuzzo, Giovanni Busatto
2012 J jnl
Unclamped repetitive stress on 1200 V normally-off SiC JFETs.
Microelectron. Reliab.
Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo
2011 J jnl
Operation of SiC normally-off JFET at the edges of its safe operating area.
Microelectron. Reliab.
Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo
2010 J jnl
IGBT RBSOA non-destructive testing methods: Analysis and discussion.
Microelectron. Reliab.
Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo
2009 J jnl
Instable mechanisms during unclamped operation of high power IGBT modules.
Microelectron. Reliab.
Giovanni Busatto, Carmine Abbate, Francesco Iannuzzo, P. Cristofaro
2008 J jnl
IGBT modules robustness during turn-off commutation.
Microelectron. Reliab.
Giovanni Busatto, Carmine Abbate, B. Abbate, Francesco Iannuzzo
2007 J jnl
The robustness of series-connected high power IGBT modules.
Microelectron. Reliab.
Carmine Abbate, Giovanni Busatto, Luigi Fratelli, Francesco Iannuzzo, B. Cascone, Roberta Manzo
2006 J jnl
Investigation of MOSFET failure in soft-switching conditions.
Microelectron. Reliab.
Francesco Iannuzzo, Giovanni Busatto, Carmine Abbate
2006 J jnl
The high frequency behaviour of high voltage and current IGBT modules.
Microelectron. Reliab.
Carmine Abbate, Giovanni Busatto, Luigi Fratelli, Francesco Iannuzzo
2004 J jnl
Analysis and optimisation through innovative driving strategy of high power IGBT performances/EMI reduction trade-off for converter systems in railway applications.
Microelectron. Reliab.
Giovanni Busatto, Luigi Fratelli, Carmine Abbate, Roberta Manzo, Francesco Iannuzzo