Carlo De Santi

49 papers C 1Journal 22Unranked 26

Year	Rank	Type	Title / Venue / Authors
2025	—	`conf`	Comprehensive Analysis of Deep level Effects and in-situ Photoionization in 0.15 $\mu \mathrm{m}$ buffer-free AIGaN/GaN HEMTs for RF applications. IRPS Francesco de Pieri, Manuel Fregolent, Marco Saro, Andrea Carlotto, Mirco Boito, Carlo De Santi, Fabiana Rampazzo, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni
2025	—	`conf`	Evidence for Avalanche Operation in Sub-Micrometer Power GaN HEMTs with p-GaN Gate. IRPS Riccardo Fraccaroli, Matteo Dell'Andrea, Manuel Fregolent, Mirco Boito, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Eleonora Canato, Isabella Rossetto, Alessio Pirani, Giansalvo Pizzo, Cristina Miccoli, Alfio Russo, Maria Eloisa Castagna, Ferdinando Iucolano, Matteo Meneghini
2025	—	`conf`	Recombination-Driven Interface Trap Generation in SiC MOSFETs Under Constant Voltage and Constant Current Stress. IRPS Alberto Marcuzzi, M. Avramenko, Carlo De Santi, Peter Moens, G. J. Gomez Garcia, A. Feng, T. Grasser, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
2025	—	`conf`	Vth and Ron Instability of GaN Power HEMTs with pGaN Gate Under Negative Gate Bias. IRPS S. L. Longato, Davide Favero, Arno Stockman, Arianna Nardo, Piet Vanmeerbeek, Marnix Tack, Gaudenzio Meneghesso, Enrico Zanoni, Carlo De Santi, Matteo Meneghini
2024	—	`conf`	$\mathrm{R}_{\text{ON}}$ and $\mathrm{V}_{\text{TH}}$ Extraction in Hard-Switched E-mode GaN HEMTs: Impact of Passivation and Layout. IRPS Davide Favero, Carlo De Santi, Arno Stockman, Arianna Nardo, Piet Vanmeerbeek, Marnix Tack, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
2024	—	`conf`	Charge Trapping in SiC MOSFETs under Constant Gate Current Stress: Analysis Based on Charge Pumping Measurements. IRPS Alberto Marcuzzi, M. Avramenko, Carlo De Santi, Peter Moens, F. Geenen, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
2024	—	`conf`	Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects. IRPS Marco Saro, Francesco de Pieri, Andrea Carlotto, Mirko Fornasier, Fabiana Rampazzo, Carlo De Santi, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni, Davide Bisi, Matthew Guidry, Stacia Keller, Umesh K. Mishra
2024	—	`conf`	On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach. IRPS Mirco Boito, Manuel Fregolent, Carlo De Santi, A. Abbisogni, S. Smerzi, Isabella Rossetto, Ferdinando Iucolano, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
2024	—	`conf`	Role of Gate Hole Injection in Minimizing Substrate Coupling and Electron Trapping in AlGaN/GaN Power HEMTs. IRPS Alberto Cavaliere, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
2024	—	`conf`	Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress. IRPS M. Avramenko, L. De Schepper, J.-F. Cano, F. Geenen, Peter Moens, Alberto Marcuzzi, Carlo De Santi, Matteo Meneghini
2023	—	`conf`	High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps. IRPS Davide Favero, Alberto Cavaliere, Carlo De Santi, Matteo Borga, W. Gonçalez Filho, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
2023	—	`conf`	Thermally-activated failure mechanisms of 0.25 \ \mu \mathrm{m}$ RF AIGaN/GaN HEMTs submitted to long-term life tests. IRPS Zhan Gao, Francesca Chiocchetta, Fabiana Rampazzo, Carlo De Santi, Mirko Fornasier, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni
2023	—	`conf`	Trapping in $\text{Al}_{2}\mathrm{O}_{3}/\text{GaN}$ MOScaps investigated by fast capacitive techniques. IRPS Manuel Fregolent, Alberto Marcuzzi, Carlo De Santi, Eldad Bahat-Treidel, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
2022	—	`conf`	Analysis and Modeling of Vth Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature. IRPS Fabrizio Masin, Carlo De Santi, Arno Stockman, J. Lettens, F. Geenen, Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, Matteo Meneghini
2022	—	`conf`	Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier. IRPS Zhan Gao, Francesca Chiocchetta, Carlo De Santi, Nicola Modolo, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Hervé Blanck, H. Stieglauer, D. Sommer, Benoit Lambert, Jan Grünenpütt, O. Kordina, J.-T. Chen, J.-C. Jacquet, Cedric Lacam, S. Piotrowicz
2022	—	`conf`	GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse. IRPS Francesca Chiocchetta, Carlo De Santi, Fabiana Rampazzo, Kalparupa Mukherjee, Jan Grünenpütt, Daniel Sommer, Hervé Blanck, Benoit Lambert, Andrea Gerosa, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
2022	—	`conf`	Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs. IRPS Davide Favero, Carlo De Santi, Kalparupa Mukherjee, Karen Geens, Matteo Borga, Benoit Bakeroot, Shuzhen You, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
2022	—	`conf`	Modeling Hot-Electron Trapping in GaN-based HEMTs. IRPS Nicola Modolo, Carlo De Santi, Andrea Minetto, Luca Sayadi, Sebastien Sicre, Gerhard Prechtl, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
2021	—	`conf`	A Generalized Approach to Determine the Switching Reliability of GaN HEMTs on-Wafer Level. IRPS Nicola Modolo, Andrea Minetto, Carlo De Santi, Luca Sayadi, Sebastien Sicre, Gerhard Prechtl, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
2021	—	`conf`	Charge Trapping in GaN Power Transistors: Challenges and Perspectives. BCICTS Matteo Meneghini, Nicola Modolo, Arianna Nardo, Carlo De Santi, Andrea Minetto, Luca Sayadi, Christian Koller, Sebastien Sicre, Gerhard Prechtl, Gaudenzio Meneghesso, Enrico Zanoni
2021	C	`conf`	Current crowding as a major cause for InGaN LED degradation at extreme high current density. IECON Nicola Trivellin, Matteo Buffolo, Carlo De Santi, Enrico Zanoni, Gaudenzio Meneghesso, Matteo Meneghini
2021	J	`jnl`	Full Optical Contactless Thermometry Based on LED Photoluminescence. IEEE Trans. Instrum. Meas. Nicola Trivellin, Matteo Buffolo, Carlo De Santi, Matteo Meneghini, Michele Forzan, Fabrizio Dughiero, Enrico Zanoni, Gaudenzio Meneghesso
2021	—	`conf`	Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs. IRPS Francesca Chiocchetta, Claudia Calascione, Carlo De Santi, Chandan Sharma, Fabiana Rampazzo, Xun Zheng, Brian Romanczyk, Matthew Guidry, Haoran Li, Stacia Keller, Umesh K. Mishra, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni
2020	—	`conf`	Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions. IRPS Fabrizio Masin, Matteo Meneghini, Eleonora Canato, Alessandro Barbato, Carlo De Santi, Arno Stockman, Abhishek Banerjee, Peter Moens, Enrico Zanoni, Gaudenzio Meneghesso
2020	—	`conf`	Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors. IRPS Kalparupa Mukherjee, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, Shuzhen You, Karen Geens, Matteo Borga, Benoit Bakeroot, Stefaan Decoutere
2019	—	`conf`	Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis. IRPS Eric E. Fabris, Matteo Meneghini, Carlo De Santi, Matteo Borga, Gaudenzio Meneghesso, Enrico Zanoni, Y. Kinoshita, Kenichiro Tanaka, H. Ishida, Tetsuzo Ueda
2018	J	`jnl`	Current induced degradation study on state of the art DUV LEDs. Microelectron. Reliab. Nicola Trivellin, Desiree Monti, Carlo De Santi, Matteo Buffolo, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
2018	J	`jnl`	Degradation mechanisms of heterogeneous III-V/Silicon loop-mirror laser diodes for photonic integrated circuits. Microelectron. Reliab. Matteo Buffolo, M. Pietrobon, Carlo De Santi, F. Samparisi, Michael L. Davenport, John E. Bowers, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
2018	J	`jnl`	Degradation of GaN-on-GaN vertical diodes submitted to high current stress. Microelectron. Reliab. Eric E. Fabris, Matteo Meneghini, Carlo De Santi, Zongyang Hu, Wenshen Li, Kazuki Nomoto, Debdeep Jena, Huili Grace Xing, Xiang Gao, Gaudenzio Meneghesso, Enrico Zanoni
2018	—	`conf`	Degradation of vertical GaN FETs under gate and drain stress. IRPS Maria Ruzzarin, Matteo Meneghini, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Min Sun, Tomás Palacios
2018	J	`jnl`	Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments. Microelectron. Reliab. Maria Ruzzarin, Matteo Meneghini, Carlo De Santi, Min Sun, Tomás Palacios, Gaudenzio Meneghesso, Enrico Zanoni
2018	J	`jnl`	Failure limits and electro-optical characteristics of GaN-based LEDs under electrical overstress. Microelectron. Reliab. N. Renso, Matteo Buffolo, Carlo De Santi, Matteo Ronzani, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
2018	J	`jnl`	Impact of dislocations on DLTS spectra and degradation of InGaN-based laser diodes. Microelectron. Reliab. Desiree Monti, Matteo Meneghini, Carlo De Santi, Agata Bojarska, Piotr Perlin, Gaudenzio Meneghesso, Enrico Zanoni
2018	J	`jnl`	On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs. Microelectron. Reliab. Mehdi Rzin, Alessandro Chini, Carlo De Santi, Matteo Meneghini, A. Hugger, Marc Hollmer, H. Stieglauer, M. Madel, J. Splettstößer, Daniel Sommer, Jan Grünenpütt, K. Beilenhoff, Hervé Blanck, J.-T. Chen, O. Kordina, Gaudenzio Meneghesso, Enrico Zanoni
2018	J	`jnl`	Positive and negative threshold voltage instabilities in GaN-based transistors. Microelectron. Reliab. Gaudenzio Meneghesso, Matteo Meneghini, Carlo De Santi, Maria Ruzzarin, Enrico Zanoni
2017	J	`jnl`	Degradation of InGaN-based MQW solar cells under 405 nm laser excitation. Microelectron. Reliab. Carlo De Santi, Matteo Meneghini, Alessandro Caria, E. Dogmus, M. Zegaoui, F. Medjdoub, Enrico Zanoni, Gaudenzio Meneghesso
2017	J	`jnl`	Long-term degradation of InGaN-based laser diodes: Role of defects. Microelectron. Reliab. Desiree Monti, Matteo Meneghini, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Agata Bojarska, Piotr Perlin
2017	J	`jnl`	Understanding the degradation processes of GaN based LEDs submitted to extremely high current density. Microelectron. Reliab. N. Renso, Matteo Meneghini, Matteo Buffolo, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni
2016	J	`jnl`	Degradation of InGaN laser diodes caused by temperature- and current-driven diffusion processes. Microelectron. Reliab. Carlo De Santi, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni
2016	J	`jnl`	Degradation of InGaN-based LEDs related to charge diffusion and build-up. Microelectron. Reliab. Marco La Grassa, Matteo Meneghini, Carlo De Santi, Enrico Zanoni, Gaudenzio Meneghesso
2016	J	`jnl`	Experimental observation of TDDB-like behavior in reverse-biased green InGaN LEDs. Microelectron. Reliab. Matteo Buffolo, Matteo Meneghini, Carlo De Santi, Henry Felber, N. Renso, Gaudenzio Meneghesso, Enrico Zanoni
2015	J	`jnl`	Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects. Microelectron. Reliab. Marco La Grassa, Matteo Meneghini, Carlo De Santi, Marco Mandurrino, Michele Goano, Francesco Bertazzi, Roland Zeisel, Bastian Galler, Gaudenzio Meneghesso, Enrico Zanoni
2015	—	`conf`	Analysis of the mechanisms limiting the reliability of retrofit LED lamps. RTSI Carlo De Santi, Matteo Dal Lago, Matteo Buffolo, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni
2015	J	`jnl`	Failure causes and mechanisms of retrofit LED lamps. Microelectron. Reliab. Carlo De Santi, Matteo Dal Lago, Matteo Buffolo, Desiree Monti, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni
2015	J	`jnl`	Long-term degradation mechanisms of mid-power LEDs for lighting applications. Microelectron. Reliab. Matteo Buffolo, Carlo De Santi, Matteo Meneghini, D. Rigon, Gaudenzio Meneghesso, Enrico Zanoni
2014	J	`jnl`	ESD on GaN-based LEDs: An analysis based on dynamic electroluminescence measurements and current waveforms. Microelectron. Reliab. Matteo Dal Lago, Matteo Meneghini, Carlo De Santi, Marco Barbato, Nicola Trivellin, Gaudenzio Meneghesso, Enrico Zanoni
2014	J	`jnl`	Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage. Microelectron. Reliab. Carlo De Santi, Matteo Meneghini, Michael Marioli, Matteo Buffolo, Nicola Trivellin, T. Weig, K. Holc, K. Köhler, J. Wagner, U. T. Schwarz, Gaudenzio Meneghesso, Enrico Zanoni
2013	J	`jnl`	Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes. Microelectron. Reliab. Carlo De Santi, Matteo Meneghini, S. Carraro, Simone Vaccari, Nicola Trivellin, Stefania Marconi, Michael Marioli, Gaudenzio Meneghesso, Enrico Zanoni
2011	J	`jnl`	Degradation of InGaN lasers: Role of non-radiative recombination and injection efficiency. Microelectron. Reliab. Nicola Trivellin, Matteo Meneghini, Carlo De Santi, Simone Vaccari, Gaudenzio Meneghesso, Enrico Zanoni, Kenji Orita, S. Takigawa, Tsuyoshi Tanaka, Daisuke Ueda