Bo Yi

17 papers Journal 8Unranked 9
YearRankTypeTitle / Venue / Authors
2026 J jnl
A Novel 2.7 kV 3C-SiC/Ga2O3 Hetero-Channel E-mode MISFET With BFOM up to 5.17 GW/cm2.
Microelectron. J.
Bo Yi, Junfeng Duan, Shengnan Zhu, Wenbo Luo, Junji Cheng, Haimeng Huang, Hongqiang Yang
2025 J jnl
A new concept high-k GaN FinFET with integrated SBD breaking the unipolar limit of GaN and realizing excellent reverse recovery performance.
Microelectron. J.
Moufu Kong, Qizhi Feng, Hongfei Deng, Zhaoyu Ai, Mingliang Yang, Ning Yu, Bingke Zhang, Bo Yi, Hongqiang Yang
2025 J jnl
High-voltage GaN HEMT with self-biased P-GaN VLD layer for improved breakdown voltage and figure of merit.
Microelectron. J.
Moufu Kong, Ning Yu, Yaowen Zhang, Zeyu Cheng, Bingke Zhang, Bo Yi, Hongqiang Yang
2024 J jnl
Investigations of SiC lateral MOSFET with high-k and equivalent variable lateral doping techniques.
Microelectron. J.
Moufu Kong, Hongfei Deng, Yingzhi Luo, Jiayan Zhu, Bo Yi, Hongqiang Yang, Qiang Hu, Fanxin Meng
2023 — conf
A Novel 1200-V Class SiC MOSFET With Schottky Barrier Diode for Improved third quadrant performance.
ASICON
Moufu Kong, Zhi Lin, Hongfei Deng, Bo Yi, Rui Jin, Hongqiang Yang
2023 — conf
A Novel SiC Superjunction Trench MOSFET with Integrated Heterojunction Diode for Improved Performance.
ASICON
Moufu Kong, Ke Huang, Ronghe Yan, Bo Yi, Bingke Zhang, Hongqiang Yang
2023 — conf
Comprehensive Comparison of Temperature Performances for SiC Trench MOSFET with Integrated Side-wall Schottky Diode and Heterojunction.
ASICON
Bo Yi, Haimeng Huang, Haoran Hu, Moufu Kong, Yilin Guo, Wenkun Shi, Junji Cheng, Hongqiang Yang
2023 J jnl
Modeling and simulation of an insulated-gate HEMT using p-SnO
Microelectron. J.
Bo Yi, Yi Xu, LiTian Zheng, Junji Cheng, Haimeng Huang, Moufu Kong, Hongqiang Yang
2021 — conf
A New Ga2O3 Trench Schottky Barrier Diode with Improved Forward Conduction Characteristics.
ASICON
Moufu Kong, Zewei Hu, Jiacheng Gao, Zongqi Chen, Jiaxin Guo, Sadaf Ali Nafees, Bo Yi, Hongqiang Yang
2021 — conf
A Novel Trench MOSFET with p-Pillar and RSO Accumulation Layer for Improved Performance.
ASICON
Moufu Kong, Ke Huang, Bin Wang, Cong Liu, Bo Yi, Hongqiang Yang
2021 — conf
A Vertical Thin Layer pLDMOS with Linear doping realizing ultralow Ron, sp.
ASICON
Bo Yi, Zheng Wu, Junji Cheng, Haimeng Huang, Moufu Kong, Hongqiang Yang
2021 — conf
A split-gate SiC trench MOSFET with embedded unipolar diode for improved performances.
ASICON
Zheng Wu, Chao Xia, Bo Yi, Junji Cheng, Haimeng Huang, Moufu Kong, Hongqiang Yang, Wenkun Shi
2020 J jnl
Lateral Power Fin MOSFET With a High-k Passivation for Ultra-Low On-Resistance.
IEEE Access
Junji Cheng, Jingjie Lin, Weizhen Chen, Shiying Wu, Haimeng Huang, Bo Yi
2020 J jnl
Simulation study of an ultra-low specific on-resistance high-voltage pLDMOS with self-biased accumulation layer.
IEICE Electron. Express
Bo Yi, Yi Feng Peng, Qing Zhao, Moufu Kong, Junji Cheng, Haimeng Huang
2019 J jnl
SiC trench MOSFET with integrated side-wall Schottky barrier diode having P
IEICE Electron. Express
Bo Yi, Hao Hu, Jia Lin, Junji Cheng, Haimeng Huang, Moufu Kong
2019 — conf
Simulation Study of Trench IGBT with Diode-Clamped P-Well for High dI/dt and dV/dt Controllability.
ASICON
Rongxin Chen, Bo Yi, Moufu Kong, Xingbi Chen
2019 — conf
Simulation Study on Novel High Voltage Transient Voltage Suppression Diodes.
ASICON
Cong Liu, Moufu Kong, Hanzhi Chen, Bo Yi, Bingke Zhang, Xingbi Chen