Bo Li

33 papers C 1Journal 28Unranked 4
YearRankTypeTitle / Venue / Authors
2026 J jnl
High-Speed Floating Voltage Level Shifter With Self-Locked Noise Immunity for High-Side Gate Driver.
IEEE Trans. Very Large Scale Integr. Syst.
Xupeng Wang, Xiaowu Cai, Yu Lu, Weidong Zhang, Xuanyi Huo, Longli Pan, Jian Lu, Liang Shan, Lei Wang, Bo Li
2025 J jnl
A 600-V half-bridge gate drive circuit with high-speed and high-noise-immunity level shifter.
Microelectron. J.
Xupeng Wang, Xiaowu Cai, Yu Lu, Jianying Dang, Longli Pan, Jian Lu, Liang Shan, Lei Wang, Bo Li
2025 J jnl
An Effective Method to Compensate for Testing Induced SBFET Degradation by Charging Deep-Level Interface Trap.
IEEE Access
Tiexin Zhang, Fanyu Liu, Lei Shu, Siyuan Chen, Yuchong Wang, Yuchen Wu, Jing Wan, Yong Xu, Shi Li, Yuyang Ding, Bo Li, Zhengsheng Han, Tian-Chun Ye
2025 J jnl
RIVL: A Low-Cost SoC Agile Development Platform for Multiple RISC-V Processors Design and Verification.
IEEE Trans. Circuits Syst. I Regul. Pap.
Lida Xu, Zewen Cao, Hualong Zhao, Zhuo Peng, Yuchi Miao, Chunan Zhuang, Hongrui Ruan, Yuying Dong, Chuanbin Zeng, Bo Li, Jiajun Luo
2025 J jnl
Radiation Dose Detector of γ-Ray Based on Transient Nonequilibrium Body Potential Under Pseudo-MOSFET Configuration.
IEEE Trans. Instrum. Meas.
Tiexin Zhang, Fanyu Liu, Lei Shu, Siyuan Chen, Yuchong Wang, Yuchen Wu, Jing Wan, Yong Xu, Shi Li, Yuyang Ding, Bo Li, Zhengsheng Han, Tian-Chun Ye
2025 J jnl
Single-Event Upset Monitor-Based Radiation-Hardened Latch for Multi-Node Upset.
IEEE Trans. Circuits Syst. II Express Briefs
Zhan Zheyu, Hainan Liu, Duoli Li, Ma Quangang, Wenxin Zhao, Zhenzhen Yan, Bo Li
2024 J jnl
A Novel Reliability-Enhanced Dual Over-Temperature Protection Circuit With Delayed Thermal Restart for Power ICs.
IEEE Trans. Circuits Syst. II Express Briefs
Jianying Dang, Xiaowu Cai, Longli Pan, Liang Shan, Yu Lu, Yafei Xie, Xupeng Wang, Shiping Wang, Bo Li
2024 J jnl
A dual-mode buck converter with dynamic sawtooth voltage for wide input voltage range application.
IEICE Electron. Express
Yafei Xie, Xiaowu Cai, Yu Lu, Longli Pan, Jian Lu, Lei Wang, Bo Li
2024 J jnl
A nMOS-R Cross-Coupled Level Shifter With High dV/dt Noise Immunity for 600-V High-Voltage Gate Driver IC.
IEEE Trans. Very Large Scale Integr. Syst.
Yu Lu, Xiaowu Cai, Jian Lu, Longli Pan, Jianying Dang, Yafei Xie, Xupeng Wang, Bo Li
2024 J jnl
A precision current sensing circuit with chopper amplifier of symmetric topology.
Microelectron. J.
Tian Han, Fazhan Zhao, Ximing Fu, Xiaowu Cai, Weiwei Yan, Haitao Zhao, Wenxin Zhao, Bo Li
2024 J jnl
An integrated capacitor-less LDO with transient and stability enhancement.
IEICE Electron. Express
Yafei Xie, Xiaowu Cai, Yu Lu, Jianying Dang, Longli Pan, Mali Gao, Lei Wang, Bo Li
2023 J jnl
A highly reliable and low-power cross-coupled 18T SRAM cell.
Microelectron. J.
Shuo Cai, Yan Wen, Jiangbiao Ouyang, Weizheng Wang, Fei Yu, Bo Li
2023 J jnl
An on-chip integrated current sensor with high precision and large current range for smart power ICs.
Microelectron. J.
Ruirui Xia, Xiaowu Cai, Liqiang Ding, Mali Gao, Yuexin Gao, Tian Han, Jianying Dang, Bo Li
2023 J jnl
Novel SenseFET structure for VDMOS with adopting body reverse bias technique to adjust the reference current ratio.
Microelectron. J.
Tian Han, Fazhan Zhao, Xiaowu Cai, Liang Shan, Yun Tang, Bo Li
2023 — conf
The Effects of $\gamma$ Radiation-Induced Trapped Charges on Single Event Transient in DSOI Technology.
IRPS
Yuchong Wang, Siyuan Chen, Fanyu Liu, Bo Li, Jiangjiang Li, Yang Huang, Tiexin Zhang, Xu Zhang, Zhengsheng Han, Tianchun Ye, Jing Wan
2022 J jnl
Design and Experimentation of Inductorless Low-Pass NGD Integrated Circuit in 180-nm CMOS Technology.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Fayu Wan, Taochen Gu, Binhong Li, Bo Li, Wenceslas Rahajandraibe, Mathieu Guerin, Sébastien Lalléchère, Blaise Ravelo
2022 — conf
Single Event Induced Crosstalk of Monolithic 3D Circuits Based on a 22 nm FD-SOI Technology.
IRPS
Junjun Zhang, Fanyu Liu, Bo Li, Yang Huang, Siyuan Chen, Yuchong Wang, Jiajun Luo, Jing Wan
2022 — conf
The Synergetic Effects of Total Ionizing Dose and High Temperature on 180 nm DSOI Technology.
APCCAS
Xu Zhang, Fanyu Liu, Bo Li, Siyuan Chen, Yang Huang, Jiangjiang Li, Jian Jiao, Tianchun Ye, Jiajun Luo
2021 J jnl
SPICE Compact BJT, MOSFET, and JFET Models for ICs Simulation in the Wide Temperature Range (From -200 °C to +300 °C).
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Konstantin O. Petrosyants, Lev M. Sambursky, Maxim V. Kozhukhov, Mamed R. Ismail-Zade, Igor A. Kharitonov, Bo Li
2021 J jnl
Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design.
Sci. China Inf. Sci.
Jianjian Wang, Jinshun Bi, Gang Liu, Hua Bai, Kai Xi, Bo Li, Sandip Majumdar, Lanlong Ji, Ming Liu, Zhangang Zhang
2020 J jnl
Performance Optimization of FD-SOI Hall Sensors Via 3D TCAD Simulations.
Sensors
Linjie Fan, Jinshun Bi, Kai Xi, Sandip Majumdar, Bo Li
2020 J jnl
Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor.
IEEE Access
Gangping Yan, Jinshun Bi, Gaobo Xu, Kai Xi, Bo Li, Linjie Fan, Huaxiang Yin
2020 J jnl
Soft Error Reliability Evaluation of Nanoscale Logic Circuits in the Presence of Multiple Transient Faults.
J. Electron. Test.
Shuo Cai, Binyong He, Weizheng Wang, Peng Liu, Fei Yu, Lairong Yin, Bo Li
2019 — conf
Influences of the Source and Drain Resistance of the MOSFETs on the Single Event Upset Hardness of SRAM cells.
ASICON
Zhongshan Zheng, Zhentao Li, Bo Li, Jiajun Luo, Zhengsheng Han
2019 J jnl
Total ionizing dose effects on graphene-based charge-trapping memory.
Sci. China Inf. Sci.
Kai Xi, Jinshun Bi, Sandip Majumdar, Bo Li, Jing Liu, Yannan Xu, Ming Liu
2018 J jnl
A single event upset tolerant latch design.
Microelectron. Reliab.
Haibin Wang, Xixi Dai, Yangsheng Wang, Issam Nofal, Li Cai, Zicai Shen, Wanxiu Sun, Jinshun Bi, Bo Li, Gang Guo, Li Chen, Sang H. Baeg
2018 J jnl
Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment.
Microelectron. Reliab.
Binhong Li, Yang Huang, Jianfei Wu, Yunbo Huang, Bo Li, Qingzhu Zhang, Ling Yang, Fayu Wan, Jiajun Luo, Zhengsheng Han, Huaxiang Yin
2018 J jnl
Process variation dependence of total ionizing dose effects in bulk nFinFETs.
Microelectron. Reliab.
Bo Li, Yunbo Huang, Ling Yang, Qingzhu Zhang, Zhongshan Zheng, Binhong Li, Huiping Zhu, Jianhui Bu, Huaxiang Yin, Jiajun Luo, Zhengsheng Han, Haibin Wang
2018 J jnl
Total ionizing dose and single event effects of 1 Mb HfO
Microelectron. Reliab.
Jinshun Bi, Yuan Duan, Kai Xi, Bo Li
2017 J jnl
Total ionizing dose effects and annealing behaviors of HfO
Sci. China Inf. Sci.
Yannan Xu, Jinshun Bi, Gaobo Xu, Kai Xi, Bo Li, Ming Liu
2012 J jnl
A Digital Dual-State-Variable Predictive Controller for High Switching Frequency Buck Converter With Improved Σ-Δ DPWM.
IEEE Trans. Ind. Informatics
Bo Li, Xuefang Lin-Shi, Bruno Allard, Jean-Marie Retif
2012 C conf
An FPGA prototype of current and voltage predictive controller for high switching frequency buck converter.
IECON
Bo Li, Xuefang Lin-Shi, Bruno Allard, Jean-Marie Retif
2012 J jnl
Low Power Digital Alternative to Analog Control of Step-Down Converter.
J. Low Power Electron.
Bo Li, Xuefang Lin-Shi, Bruno Allard