Binjie Cheng

24 papers A 2C 7Journal 5Unranked 10
YearRankTypeTitle / Venue / Authors
2016 J jnl
Multivariate Modeling of Variability Supporting Non-Gaussian and Correlated Parameters.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
André Lange, Christoph Sohrmann, Roland Jancke, Joachim Haase, Binjie Cheng, Asen Asenov, Ulf Schlichtmann
2016 — conf
Nanowire transistor solutions for 5nm and beyond.
ISQED
A. Asenov, Yangang Wang, Binjie Cheng, Xingsheng Wang, Plamen Asenov, Talib Al-Ameri, Vihar P. Georgiev
2015 — conf
Statistical simulations of 6T-SRAM cell ageing using a reliability aware simulation flow.
ESSDERC
Razaidi Hussin, Louis Gerrer, Jie Ding, Liping Wang, Salvatore M. Amoroso, Binjie Cheng, Dave Reid, Pieter Weckx, Marko Simicic, Jacopo Franco, Annelies Vanderheyden, Danielle Vanhaeren, Naoto Horiguchi, Ben Kaczer, Asen Asenov
2014 — conf
Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stability.
ESSDERC
Xingsheng Wang, Binjie Cheng, Andrew R. Brown, Campbell Millar, Asen Asenov
2013 J jnl
Analytical Models for Three-Dimensional Ion Implantation Profiles in FinFETs.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Liping Wang, Andrew R. Brown, Binjie Cheng, Asen Asenov
2013 J jnl
Impact of statistical parameter set selection on the statistical compact model accuracy: BSIM4 and PSP case study.
Microelectron. J.
Negin Moezi, Daryoosh Dideban, Binjie Cheng, Scott Roy, Asen Asenov
2013 — conf
Impact of statistical variability and charge trapping on 14 nm SOI FinFET SRAM cell stability.
ESSDERC
Xingsheng Wang, Binjie Cheng, Andrew R. Brown, Campbell Millar, Jente B. Kuang, Sani R. Nassif, Asen Asenov
2013 C conf
SRAM device and cell co-design considerations in a 14nm SOI FinFET technology.
ISCAS
Binjie Cheng, Xingsheng Wang, Andrew R. Brown, Jente B. Kuang, Dave Reid, Campbell Millar, Sani R. Nassif, Asen Asenov
2013 J jnl
Statistical Variability and Reliability and the Impact on Corresponding 6T-SRAM Cell Design for a 14-nm Node SOI FinFET Technology.
IEEE Des. Test
Xingsheng Wang, Binjie Cheng, Jente B. Kuang, Andrew R. Brown, Campbell Millar, Asen Asenov
2012 C conf
A framework to study time-dependent variability in circuits at sub-35nm technology nodes.
ISCAS
Tong Boon Tang, Alan F. Murray, Binjie Cheng, Asen Asenov
2012 C conf
Analysis of FinFET technology on memories.
IOLTS
Esteve Amat, A. Asenov, Ramon Canal, Binjie Cheng, J.-Ll. Cruz, Zoran Jaksic, Miguel Miranda, Antonio Rubio, Paul Zuber
2012 — conf
Statistical variability in 14-nm node SOI FinFETs and its impact on corresponding 6T-SRAM cell design.
ESSDERC
Xingsheng Wang, Binjie Cheng, Andrew R. Brown, Campbell Millar, Asen Asenov
2011 C conf
An analytical mismatch model of nano-CMOS device under impact of intrinsic device variability.
ISCAS
Feng Hong, Binjie Cheng, Scott Roy, David R. S. Cumming
2011 C conf
New reliability mechanisms in memory design for sub-22nm technologies.
IOLTS
Nivard Aymerich, A. Asenov, Andrew R. Brown, Ramon Canal, Binjie Cheng, Joan Figueras, Antonio González, Enric Herrero, S. Markov, Miguel Miranda, Peyman Pouyan, Tanausú Ramírez, Antonio Rubio, Elena I. Vatajelu, Xavier Vera, Xingsheng Wang, Paul Zuber
2011 A conf
Statistical aspects of NBTI/PBTI and impact on SRAM yield.
DATE
Asen Asenov, Andrew R. Brown, Binjie Cheng
2010 A conf
Capturing intrinsic parameter fluctuations using the PSP compact model.
DATE
Binjie Cheng, Daryoosh Dideban, Negin Moezi, Campbell Millar, Gareth Roy, Xingsheng Wang, Scott Roy, Asen Asenov
2010 — conf
Modeling and simulation of transistor and circuit variability and reliability.
CICC
Asen Asenov, Binjie Cheng, Daryoosh Dideban, Urban Kovac, Negin Moezi, Campbell Millar, Gareth Roy, Andrew R. Brown, Scott Roy
2010 C conf
Statistical NBTI-effect prediction for ULSI circuits.
ISCAS
Tong Boon Tang, Alan F. Murray, Binjie Cheng, Asen Asenov
2010 J jnl
Statistical-Variability Compact-Modeling Strategies for BSIM4 and PSP.
IEEE Des. Test Comput.
Binjie Cheng, Daryoosh Dideban, Negin Moezi, Campbell Millar, Gareth Roy, Xingsheng Wang, Scott Roy, Asen Asenov
2010 — conf
Variability resilient low-power 7T-SRAM design for nano-scaled technologies.
ISQED
Touqeer Azam, Binjie Cheng, David R. S. Cumming
2009 C conf
Impact of Random Dopant Induced Statistical Variability on Inverter Switching Trajectories and Timing Variability.
ISCAS
Noor Ain Kamsani, Binjie Cheng, Scott Roy, Asen Asenov
2007 — conf
The scalability of 8T-SRAM cells under the influence of intrinsic parameter fluctuations.
ESSCIRC
Binjie Cheng, Scott Roy, A. Asenov
2005 — conf
Probabilistic computing with future deep sub-micrometer devices: a modelling approach.
ISCAS (3)
Nor Hisham Hamid, Alan F. Murray, David I. Laurenson, Scott Roy, Binjie Cheng
2004 — conf
The impact of random doping effects on CMOS SRAM cell.
ESSCIRC
Binjie Cheng, Scott Roy, Asen Asenov