Bernd Heinemann

33 papers C 1Journal 13Unranked 19

Year	Rank	Type	Title / Venue / Authors
2022	J	`jnl`	A Broadband 300 GHz Power Amplifier in a 130 nm SiGe BiCMOS Technology for Communication Applications. IEEE J. Solid State Circuits Thomas Bücher, Janusz Grzyb, Philipp Hillger, Holger Rücker, Bernd Heinemann, Ullrich R. Pfeiffer
2022	J	`jnl`	Durch Veränderung führen: Warum IT-Projekte ein kommunikatives Change-Management brauchen. Wirtschaftsinformatik Manag. Bernd Heinemann
2021	—	`conf`	A 239-298 GHz Power Amplifier in an Advanced 130 nm SiGe BiCMOS Technology for Communications Applications. ESSCIRC Thomas Bücher, Janusz Grzyb, Philipp Hillger, Holger Rücker, Bernd Heinemann, Ullrich R. Pfeiffer
2020	J	`jnl`	3.2-mW Ultra-Low-Power 173-207-GHz Amplifier With 130-nm SiGe HBTs Operating in Saturation. IEEE J. Solid State Circuits Yaxin Zhang, Wenfeng Liang, Xiaodi Jin, Mario Krattenmacher, Sophia Falk, Paulius Sakalas, Bernd Heinemann, Michael Schröter
2019	—	`conf`	Device Architectures for High-speed SiGe HBTs. BCICTS Holger Rücker, Bernd Heinemann
2019	—	`conf`	Optimization and Performance Limits of a 64-QAM Wireless Communication Link at 220-260 GHz in a SiGe HBT Technology. RWS Pedro Rodríguez-Vázquez, Janusz Grzyb, Bernd Heinemann, Ullrich R. Pfeiffer
2018	J	`jnl`	A 128-Pixel System-on-a-Chip for Real-Time Super-Resolution Terahertz Near-Field Imaging. IEEE J. Solid State Circuits Philipp Hillger, Ritesh Jain, Janusz Grzyb, Wolfgang Forster, Bernd Heinemann, Gaetan MacGrogan, Patrick Mounaix, Thomas Zimmer, Ullrich R. Pfeiffer
2018	—	`conf`	A 128-pixel 0.56THz sensing array for real-time near-field imaging in 0.13μm SiGe BiCMOS. ISSCC Philipp Hillger, Ritesh Jain, Janusz Grzyb, Laven Mavarani, Bernd Heinemann, Gaetan MacGrogan, Patrick Mounaix, Thomas Zimmer, Ullrich R. Pfeiffer
2018	—	`conf`	A 65 Gbps QPSK one meter wireless link operating at a 225-255 GHz tunable carrier in a SiGe HBT technology. RWS Pedro Rodríguez-Vázquez, Janusz Grzyb, Neelanjan Sarmah, Bernd Heinemann, Ullrich R. Pfeiffer
2018	—	`conf`	SiGe BiCMOS Current Status and Future Trends in Europe. BCICTS Pascal Chevalier, Wolfgang Liebl, Holger Rücker, Alexis Gauthier, Dirk Manger, Bernd Heinemann, Grégory Avenier, Josef Böck
2017	J	`jnl`	Si/SiGe: C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications. Proc. IEEE Pascal Chevalier, Michael Schröter, Colombo R. Bolognesi, Vincenzo d'Alessandro, Maria Alexandrova, Josef Böck, Ralf Flickiger, Sébastien Fregonese, Bernd Heinemann, Christoph Jungemann, Rickard Lovblom, Cristell Maneux, Olivier Ostinelli, Andreas Pawlak, Niccolò Rinaldi, Holger Rücker, Gerald Wedel, Thomas Zimmer
2017	J	`jnl`	SiGe HBT Technology: Future Trends and TCAD-Based Roadmap. Proc. IEEE Michael Schröter, Tommy Rosenbaum, Pascal Chevalier, Bernd Heinemann, Sorin P. Voinigescu, Ed Preisler, Josef Böck, Anindya Mukherjee
2017	—	`conf`	Towards THz high data-rate communication: a 50 Gbps all-electronic wireless link at 240 GHz. NANOCOM Pedro Rodríguez-Vázquez, Janusz Grzyb, Neelanjan Sarmah, Ullrich R. Pfeiffer, Bernd Heinemann
2016	—	`conf`	25.1 A fully integrated 0.55THz near-field sensor with a lateral resolution down to 8µm in 0.13µm SiGe BiCMOS. ISSCC Janusz Grzyb, Bernd Heinemann, Ullrich R. Pfeiffer
2016	J	`jnl`	A 0.55 THz Near-Field Sensor With a µm-Range Lateral Resolution Fully Integrated in 130 nm SiGe BiCMOS. IEEE J. Solid State Circuits Janusz Grzyb, Bernd Heinemann, Ullrich R. Pfeiffer
2014	—	`conf`	14.5 A 0.53THz reconfigurable source array with up to 1mW radiated power for terahertz imaging applications in 0.13μm SiGe BiCMOS. ISSCC Ullrich R. Pfeiffer, Yan Zhao, Janus Grzyb, Richard Al Hadi, Neelanjan Sarmah, Wolfgang Forster, Holger Rücker, Bernd Heinemann
2014	J	`jnl`	A 0.53 THz Reconfigurable Source Module With Up to 1 mW Radiated Power for Diffuse Illumination in Terahertz Imaging Applications. IEEE J. Solid State Circuits Ullrich R. Pfeiffer, Yan Zhao, Janusz Grzyb, Richard Al Hadi, Neelanjan Sarmah, Wolfgang Forster, Holger Rücker, Bernd Heinemann
2014	—	`conf`	Monolithically integrated 25Gbit/sec receiver for 1.55µm in photonic BiCMOS technology. OFC Dieter Knoll, Stefan Lischke, Lars Zimmermann, Bernd Heinemann, Daniel Micusík, P. Ostrovskyy, Georg Winzer, Marcel Kroh, Rainer Barth, Thomas Grabolla, K. Schulz, Mirko Fraschke, Marco Lisker, Jürgen Drews, Andreas Trusch, A. Kruger, Steffen Marschmeyer, Harald H. Richter, O. Fursenko, Yuji Yamamoto, Benjamin Wohlfeil, Klaus Petermann, Andreas Beling, Q. Zhou, Bernd Tillack
2013	J	`jnl`	A Terahertz Detector Array in a SiGe HBT Technology. IEEE J. Solid State Circuits Richard Al Hadi, Janus Grzyb, Bernd Heinemann, Ullrich R. Pfeiffer
2012	—	`conf`	SiGe BiCMOS technology for mm-wave systems. ISOCC Holger Rücker, Bernd Heinemann
2011	—	`conf`	A 820GHz SiGe chipset for terahertz active imaging applications. ISSCC Erik Öjefors, Janus Grzyb, Yan Zhao, Bernd Heinemann, Bernd Tillack, Ullrich R. Pfeiffer
2010	J	`jnl`	A 0.13 µm SiGe BiCMOS Technology Featuring f IEEE J. Solid State Circuits Holger Rücker, Bernd Heinemann, Wolfgang Winkler, Rainer Barth, Johannes Borngräber, Jürgen Drews, Gerhard G. Fischer, Alexander Fox, Thomas Grabolla, Ulrich Haak, Dieter Knoll, Falk Korndörfer, Andreas Mai, Steffen Marschmeyer, Peter Schley, Detlef Schmidt, J. Schmidt, Markus Andreas Schubert, K. Schulz, Bernd Tillack, Dirk Wolansky, Yuji Yamamoto
2010	J	`jnl`	A Subharmonic Receiver in SiGe Technology for 122 ~ GHz Sensor Applications. IEEE J. Solid State Circuits Klaus Schmalz, Wolfgang Winkler, Johannes Borngräber, Wojciech Debski, Bernd Heinemann, Christoph Scheytt
2009	—	`conf`	122 GHz low-noise-amplifier in sige technology. ESSCIRC Wolfgang Winkler, Wojciech Debski, Bernd Heinemann, Falk Korndörfer, Holger Rücker, Klaus Schmalz, Christoph Scheytt, Bernd Tillack
2009	—	`conf`	Pushing the speed limits of SiGe: C HBTs up to 0.5 Terahertz. CICC Stefaan Decoutere, Stefaan Van Huylenbroeck, Bernd Heinemann, Alexander Fox, Pascal Chevalier, Alain Chantre, Thomas F. Meister, Klaus Aufinger, Michael Schröter
2006	C	`conf`	A 10GS/s 2V ISCAS Samiran Halder, Sabbir A. Osmany, Hans Gustat, Bernd Heinemann
2005	—	`conf`	A low-power, 10GS/s track-and-hold amplifier in SiGe BiCMOS technology. ESSCIRC Yevgen Borokhovych, Hans Gustat, Bernd Tillack, Bernd Heinemann, Yuan Lu, Wei-Min Lance Kuo, Xiangtao Li, Ramkumar Krithivasan, John D. Cressler
2004	—	`conf`	LC-oscillators above 100 GHz in silicon-based technology. ESSCIRC Wolfgang Winkler, Johannes Borngräber, Bernd Heinemann
2001	J	`jnl`	Recombination current measurements in the space charge region of MOS field-induced pn junctions. Microelectron. Reliab. Roland Sorge, Bernd Heinemann
1999	J	`jnl`	Methods for generating and editing merged isotropic/anisotropic triangular-element meshes. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. Mario Netzel, Bernd Heinemann, Maik Brett, Dagmar Schipanski
1999	—	`conf`	Wireless communication integrated circuits with CMOS-compatible SiGe HBT technology modules. CICC Wolfgang Winkler, Johannes Borngräber, Heide Erzgraeber, Ha. Erzgraber, Bernd Heinemann, Dieter Knoll, H. Jörg Osten, Michael Pierschel, Klaus Pressel, Peter Schley
1982	—	`conf`	Comments on I. Futo, T. Gergely. International Working Conference on Model Realism Bernd Heinemann
1981	—	`conf`	Subclasses of Self-Modifying Nets. Selected Papers from the First and the Second European Workshop on Application and Theory of Petri Nets Bernd Heinemann