Benoit Lambert

19 papers Journal 16Unranked 3
YearRankTypeTitle / Venue / Authors
2022 — conf
Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier.
IRPS
Zhan Gao, Francesca Chiocchetta, Carlo De Santi, Nicola Modolo, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Hervé Blanck, H. Stieglauer, D. Sommer, Benoit Lambert, Jan Grünenpütt, O. Kordina, J.-T. Chen, J.-C. Jacquet, Cedric Lacam, S. Piotrowicz
2022 — conf
GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse.
IRPS
Francesca Chiocchetta, Carlo De Santi, Fabiana Rampazzo, Kalparupa Mukherjee, Jan Grünenpütt, Daniel Sommer, Hervé Blanck, Benoit Lambert, Andrea Gerosa, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
2017 J jnl
Gate defects analysis in AlGaN/GaN devices by mean of accurate extraction of the Schottky Barrier Height, electrical modelling, T-CAD simulations and TEM imaging.
Microelectron. Reliab.
Jean-Guy Tartarin, O. Lazar, D. Saugnon, Benoit Lambert, C. Moreau, C. Bouexière, E. Romain-Latu, K. Rousseau, A. David, J.-L. Roux
2015 J jnl
Correlation between transient evolutions of the gate and drain currents in AlGaN/GaN technologies.
Microelectron. Reliab.
O. Lazar, Jean-Guy Tartarin, Benoit Lambert, C. Moreau, J.-L. Roux
2015 J jnl
Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs.
Microelectron. Reliab.
M. Rzin, Nathalie Labat, Nathalie Malbert, Arnaud Curutchet, Laurent Brunel, Benoit Lambert
2015 J jnl
Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing.
Microelectron. Reliab.
James W. Pomeroy, Michael J. Uren, Benoit Lambert, Martin Kuball
2014 J jnl
Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications.
Microelectron. Reliab.
Antonio Stocco, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni
2014 J jnl
Proton induced trapping effect on space compatible GaN HEMTs.
Microelectron. Reliab.
Antonio Stocco, Simone Gerardin, Davide Bisi, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni
2013 J jnl
Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress.
Microelectron. Reliab.
Laurent Brunel, Benoit Lambert, P. Mezenge, J. Bataille, D. Floriot, Jan Grünenpütt, Hervé Blanck, D. Carisetti, Y. Gourdel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat
2013 J jnl
Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements.
Microelectron. Reliab.
S. Karboyan, Jean-Guy Tartarin, M. Rzin, Laurent Brunel, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, D. Carisetti, Benoit Lambert, M. Mermoux, E. Romain-Latu, F. Thomas, C. Bouexière, C. Moreau
2013 J jnl
Qualification of 50 V GaN on SiC technology for RF power amplifiers.
Microelectron. Reliab.
P. J. van der Wel, T. Rödle, Benoit Lambert, Hervé Blanck, Maximilian Dammann
2012 J jnl
Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test.
Microelectron. Reliab.
Benoit Lambert, Nathalie Labat, Dominique Carisetti, Serge Karboyan, Jean-Guy Tartarin, Jim Thorpe, Laurent Brunel, Arnaud Curutchet, Nathalie Malbert, Eddy Latu-Romain, Michel Mermoux
2012 — conf
Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements.
ESSDERC
Laurent Brunel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat, Benoit Lambert
2012 J jnl
Reliability data's of 0.5 μm AlGaN/GaN on SiC technology qualification.
Microelectron. Reliab.
Benoit Lambert, Jim Thorpe, Reza Behtash, Bernd Schauwecker, Franck Bourgeois, Helmut Jung, Joëlle Bataille, Patrick Mezenge, Cyril Gourdon, Catherine Ollivier, Didier Floriot, Hervé Blanck
2010 J jnl
Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations.
Microelectron. Reliab.
Mustapha Faqir, Mohsine Bouya, Nathalie Malbert, Nathalie Labat, D. Carisetti, Benoit Lambert, Giovanni Verzellesi, Fausto Fantini
2010 J jnl
Reliability of high voltage/high power L/S-band Hbt technology.
Microelectron. Reliab.
Benoit Lambert, G. Jonsson, J. Bataille, C. Ollivier, P. Mezenge, H. Derewonko, H. Thomas, D. Floriot, Hervé Blanck, C. Moreau
2008 J jnl
Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques.
Microelectron. Reliab.
Mohsine Bouya, Nathalie Malbert, Nathalie Labat, D. Carisetti, Philippe Perdu, J. C. Clement, Benoit Lambert, M. Bonnet
2002 J jnl
Degradation mechanisms induced by thermal and bias stresses in InP HEMTs.
Microelectron. Reliab.
Nathalie Labat, Nathalie Malbert, Benoit Lambert, André Touboul, F. Garat, B. Proust
2001 J jnl
Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses.
Microelectron. Reliab.
Benoit Lambert, Nathalie Malbert, Nathalie Labat, Frédéric Verdier, André Touboul, P. Huguet, R. Bonnet, G. Pataut