Benoit Bakeroot

16 papers Misc 1Journal 2Unranked 13
YearRankTypeTitle / Venue / Authors
2025 — conf
RTN Analysis of Schottky p-GaN Gate HEMTs Under Forward Gate Stress: Impact of Temperature.
IRPS
Maurizio Millesimo, Lorenzo Valentini, Claudio Fiegna, Enrico Sangiorgi, Andrea Natale Tallarico, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot
2024 — conf
Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate.
IRPS
Maurizio Millesimo, Claudio Fiegna, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Andrea Natale Tallarico
2023 — conf
High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps.
IRPS
Davide Favero, Alberto Cavaliere, Carlo De Santi, Matteo Borga, W. Gonçalez Filho, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
2022 — conf
Device optimization for 200V GaN-on-SOI Platform for Monolithicly Integrated Power Circuits.
ESSDERC
Olga Syshchyk, Thibault Cosnier, Zheng-Hong Huang, Deepthi Cingu, Dirk Wellekens, Anurag Vohra, Karen Geens, Pavan Vudumula, Urmimala Chatterjee, Stefaan Decoutere, Tian-Li Wu, Benoit Bakeroot
2022 — conf
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition.
IRPS
Maurizio Millesimo, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Claudio Fiegna, Andrea Natale Tallarico
2022 — conf
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs.
IRPS
Davide Favero, Carlo De Santi, Kalparupa Mukherjee, Karen Geens, Matteo Borga, Benoit Bakeroot, Shuzhen You, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
2021 — conf
ON-state reliability of GaN-on-Si Schottky Barrier Diodes: Si3N4 vs. Al2O3/SiO2 GET dielectric.
IRPS
Eliana Acurio, Lionel Trojman, Brice De Jaeger, Benoit Bakeroot, Stefaan Decoutere
2020 — conf
Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors.
IRPS
Kalparupa Mukherjee, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, Shuzhen You, Karen Geens, Matteo Borga, Benoit Bakeroot, Stefaan Decoutere
2019 — conf
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability.
IRPS
Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot, Andrea Natale Tallarico, Enrico Sangiorgi, Claudio Fiegna, J. Zheng, X. Ma, Matteo Borga, Elena Fabris, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso, Juraj Priesol, Alexander Satka
2018 — conf
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs.
IRPS
Arno Stockman, Eleonora Canato, Alaleh Tajalli, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, Benoit Bakeroot
2017 — conf
Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron.
ESSDERC
Arno Stockman, Michael J. Uren, Alaleh Tajalli, Matteo Meneghini, Benoit Bakeroot, Peter Moens
2015 J jnl
A 16 Channel High-Voltage Driver with 14 Bit Resolution for Driving Piezoelectric Actuators.
IEEE Trans. Circuits Syst. I Regul. Pap.
Ramses Pierco, Guy Torfs, Jochen Verbrugghe, Benoit Bakeroot, Johan Bauwelinck
2015 — conf
Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs.
IRPS
Tian-Li Wu, Denis Marcon, Brice De Jaeger, Marleen Van Hove, Benoit Bakeroot, Steve Stoffels, Guido Groeseneken, Stefaan Decoutere, Robin Roelofs
2014 J jnl
Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes.
Microelectron. Reliab.
Jie Hu, Steve Stoffels, Silvia Lenci, Nicolo Ronchi, Rafael Venegas, Shuzhen You, Benoit Bakeroot, Guido Groeseneken, Stefaan Decoutere
2008 — conf
A new type of level-shifter for n-type high side switches used in high-voltage switching ADSL line-drivers.
ICECS
Jordie Buyle, Vincent De Gezelle, Benoit Bakeroot, Jan Doutreloigne
2007 Misc conf
A New Charge based Compact Model for Lateral Asymmetric MOSFET and its application to High Voltage MOSFET Modeling.
VLSI Design
Yogesh Singh Chauhan, François Krummenacher, Renaud Gillon, Benoit Bakeroot, Michel J. Declercq, Adrian M. Ionescu