Benjamín Iñíguez

41 papers C 1Misc 1Journal 17Unranked 22
YearRankTypeTitle / Venue / Authors
2025 — conf
Evaluating Device Variability in RRAM-Based Single- and Multi-Layer Perceptrons.
MIXDES
Alan Blumenstein, Eduardo Pérez, Christian Wenger, Nadine Dersch, Alexander Kloes, Benjamín Iñíguez, Mike Schwarz
2022 — conf
Compact Modeling of Channel-Resistance Effects in Reconfigurable Field-Effect Transistors.
MIXDES
Christian Römer, Ghader Darbandy, Mike Schwarz, Jens Trommer, Maik Simon, Andre Heinzig, Thomas Mikolajick, Walter M. Weber, Benjamín Iñíguez, Alexander Kloes
2022 — conf
Impact of Mechanical Bending on the Performance of Organic Thin-Film Transistors and the Characteristic Temperature of the Density of States.
MIXDES
Aristeidis Nikolaou, Jakob Leise, Jakob Pruefer, Ute Zschieschang, Hagen Klauk, Ghader Darbandy, Benjamín Iñíguez, Alexander Kloes
2021 — conf
Variability-Aware Characterization of Current Mirrors Based on Organic Thin-Film Transistors on Flexible Substrates.
MIXDES
Aristeidis Nikolaou, Jakob Leise, Jakob Pruefer, Ute Zschieschang, Hagen Klauk, Ghader Darbandy, Benjamín Iñíguez, Alexander Kloes
2019 — conf
Analytical Model for Threshold-Voltage Shift in Submicron Staggered Organic Thin-Film Transistors.
MIXDES
Jakob Prüfer, Jakob Simon Leise, Ghader Darbandy, James W. Borchert, Hagen Klauk, Benjamín Iñíguez, Thomas Gneiting, Alexander Kloes
2019 — conf
Closed-Form Modeling Approach of Trap-Assisted Tunneling Current for Use in Compact TFET Models.
MIXDES
Fabian Horst, Atieh Farokhnejad, Benjamín Iñíguez, Alexander Kloes
2019 — conf
Evaluation of Static/Transient Performance of TFET Inverter Regarding Device Parameters Using a Compact Model.
ESSDERC
Atieh Farokhnejad, Fabian Horst, Benjamín Iñíguez, François Lime, Alexander Kloes
2018 — conf
An Area Equivalent WKB Approach to Calculate the B2B Tunneling Probability for a Numerical Robust Implementation in TFET Compact Models.
MIXDES
Fabian Horst, Atieh Farokhnejad, Benjamín Iñíguez, Alexander Kloes
2017 — conf
Analytical modeling of RDF effects on the threshold voltage in short-channel double-gate MOSFETs.
MIXDES
Michael Graef, Franziska Hain, Fabian Hosenfeld, Fabian Horst, Atieh Farokhnejad, Benjamín Iñíguez, Alexander Kloes
2017 — conf
Non-iterative NEGF based model for band-to-band tunneling current in DG TFETs.
MIXDES
Fabian Hosenfeld, Fabian Horst, Alexander Kloes, Benjamín Iñíguez, François Lime
2016 — conf
Comparative numerical analysis and analytical RDF-modeling of MOSFETs and DG Tunnel-FETs.
MIXDES
Michael Graef, Franziska Hain, Fabian Hosenfeld, Fabian Horst, Atieh Farokhnejad, Alexander Kloes, Benjamín Iñíguez
2016 — conf
Implementation of a DC compact model for double-gate Tunnel-FET based on 2D calculations and application in circuit simulation.
ESSDERC
Fabian Horst, Michael Graef, Fabian Hosenfeld, Atieh Farokhnejad, Franziska Hain, Gia Vinh Luong, Qing-Tai Zhao, Benjamín Iñíguez, Alexander Kloes
2016 — conf
Modeling approach for rapid NEGF-based simulation of ballistic current in ultra-short DG MOSFETs.
MIXDES
Fabian Hosenfeld, Michael Graef, Fabian Horst, Alexander Kloes, Benjamín Iñíguez, François Lime
2016 — conf
Modeling the variation of threshold voltage, mobility factor and saturation coefficient in amorphous Indium-Gallium-Zinc Oxide thin film transistors.
CCE
Y. Hernandez-Barrios, F. Avila-Herrera, Magali Estrada, Antonio Cerdeira, Oana Moldovan, Benjamín Iñíguez, Rodrigo Picos
2016 J jnl
On the series resistance in staggered amorphous thin film transistors.
Microelectron. Reliab.
Antonio Cerdeira, Magali Estrada, Lluís F. Marsal, Josep Pallarès, Benjamín Iñíguez
2015 J jnl
A complete and Verilog-A compatible Gate-All-Around long-channel junctionless MOSFET model implemented in CMOS inverters.
Microelectron. J.
Oana Moldovan, François Lime, Benjamín Iñíguez
2015 J jnl
DC self-heating effects modelling in SOI and bulk FinFETs.
Microelectron. J.
Benito González, Juan Bautista Roldán, Benjamín Iñíguez, Antonio Lázaro, Antonio Cerdeira
2015 J jnl
Graphene electronic sensors - review of recent developments and future challenges.
IET Circuits Devices Syst.
Oana Moldovan, Benjamín Iñíguez, M. Jamal Deen, Lluís F. Marsal
2014 — conf
3-D compact model for nanoscale junctionless triple-gate nanowire MOSFETs.
ESSDERC
Thomas Holtij, Michael Graef, Alexander Kloes, Benjamín Iñíguez
2014 J jnl
A 2D closed form model for the electrostatics in hetero-junction double-gate tunnel-FETs for calculation of band-to-band tunneling current.
Microelectron. J.
Michael Graef, Thomas Holtij, Franziska Hain, Alexander Kloes, Benjamín Iñíguez
2014 J jnl
Characterization of MIS structures and PTFTs using TiOx deposited by spin-coating.
Microelectron. Reliab.
C. Meneses, José G. Sánchez, Magali Estrada, Antonio Cerdeira, Josep Pallarès, Benjamín Iñíguez, Lluís F. Marsal
2014 — conf
Improved analytical potential modeling in double-gate tunnel-FETs.
MIXDES
Michael Graef, Thomas Holtij, Franziska Hain, Alexander Kloes, Benjamín Iñíguez
2014 J jnl
Modeling and performance study of nanoscale double gate junctionless and inversion mode MOSFETs including carrier quantization effects.
Microelectron. J.
Thomas Holtij, Michael Graef, Alexander Kloes, Benjamín Iñíguez
2013 — conf
A compact charge-based physical model for AlGaN/GaN HEMTs.
RWS
F. M. Yigletu, Benjamín Iñíguez, Sourabh Khandelwal, Tor A. Fjeldly
2013 — conf
A compact charge-based physical model for AlGaN/GaN HEMTs.
WiSNet
F. M. Yigletu, Benjamín Iñíguez, Sourabh Khandelwal, Tor A. Fjeldly
2013 J jnl
Implementation of nanoscale double-gate CMOS circuits using compact advanced transport models.
Microelectron. J.
Muthupandian Cheralathan, Esteban Contreras, Joaquín Alvarado, Antonio Cerdeira, Giuseppe Iannaccone, Enrico Sangiorgi, Benjamín Iñíguez
2013 — conf
Two-dimensional physics-based modeling of electrostatics and band-to-band tunneling in tunnel-FETs.
MIXDES
Michael Graef, Thomas Holtij, Franziska Hain, Alexander Kloes, Benjamín Iñíguez
2013 — conf
Unified charge model for short-channel junctionless double gate MOSFETs.
MIXDES
Thomas Holtij, Michael Graef, Franziska Hain, Alexander Kloes, Benjamín Iñíguez
2012 J jnl
Effect of interface charge on the dc bias stress-induced deformation and shift of the transfer characteristic of amorphous oxide thin-film transistors.
Microelectron. Reliab.
Magali Estrada, Antonio Cerdeira, Benjamín Iñíguez
2012 J jnl
Modeling the behavior of amorphous oxide thin film transistors before and after bias stress.
Microelectron. Reliab.
Antonio Cerdeira, Magali Estrada, Blanca S. Soto-Cruz, Benjamín Iñíguez
2012 J jnl
Optimised design of an organic thin-film transistor amplifier using the gm/ID methodology.
IET Circuits Devices Syst.
Rodrigo Picos, Eugenio García-Moreno, Miquel Roca, Benjamín Iñíguez, Magali Estrada, Antonio Cerdeira
2012 J jnl
Organic thin-film transistor bias-dependent capacitance compact model in accumulation regime.
IET Circuits Devices Syst.
Alejandra Castro-Carranza, Magali Estrada, Jairo C. Nolasco, Antonio Cerdeira, Lluís F. Marsal, Benjamín Iñíguez, Josep Pallarès
2011 J jnl
Influence of P3HT: PCBM blend preparation on the active layer morphology and cell degradation.
Microelectron. Reliab.
V. S. Balderrama, Magali Estrada, Antonio Cerdeira, Blanca S. Soto-Cruz, Lluís F. Marsal, Josep Pallarès, Jairo C. Nolasco, Benjamín Iñíguez, Emilio Palomares, Josep Albero
2011 — conf
Modeling the subthreshold region of OTFTs.
CCE
Antonio Cerdeira, Magali Estrada, Benjamín Iñíguez, S. Soto
2008 J jnl
Conduction mechanisms of silicon oxide/titanium oxide MOS stack structures.
Microelectron. Reliab.
Julio C. Tinoco, Magali Estrada, Benjamín Iñíguez, Antonio Cerdeira
2007 — conf
Charge-Based Compact Modeling of Multiple-Gate MOSFET.
CICC
Benjamín Iñíguez, Antonio Lázaro, Hamdy Abd Elhamid, Oana Moldovan, Bogdan Nae, Jaume Roig, David Jiménez
2006 Misc conf
Self-consistent 2D Compact Model for Nanoscale Double Gate MOSFETs.
International Conference on Computational Science (4)
S. Kolberg, Tor A. Fjeldly, Benjamín Iñíguez
2005 J jnl
Effect of localized traps on the anomalous behavior of the transconductance in nanocrystalline TFTs.
Microelectron. Reliab.
Magali Estrada, Antonio Cerdeira, Luis Reséndiz, Benjamín Iñíguez, Lluís F. Marsal, Josep Pallarès
1998 J jnl
Clocked Dosimeter Compatible with Digital CMOS Technology.
J. Electron. Test.
Eugenio García-Moreno, Benjamín Iñíguez, Miquel Roca, Jaume Segura, Eugeni Isern
1995 J jnl
Development of a C
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Benjamín Iñíguez, Eugenio García-Moreno
1994 C conf
Development of a Cinfinty-Continuous Small-Signal Model for a MOS Transistor.
ISCAS
Benjamín Iñíguez, Eugenio García-Moreno