Ben Kaczer - RankMe

120 papers A 3B 1C 6Journal 23Unranked 87

Year	Rank	Type	Title / Venue / Authors
2025	—	`conf`	A Carrier-Energy-Based Compact Model for Hot-Carrier Degradation Implemented in Verilog-A. IRPS Dishant Sangani, Michiel Vandemaele, Stanislav Tyaginov, Erik Bury, Ben Kaczer, Georges G. E. Gielen
2025	—	`conf`	Advanced RTN Analysis on 3D NAND Trench Devices Using Physics-Informed Machine Learning Framework. IRPS Yusuke Higashi, Anirudh Varanasi, Philippe J. Roussel, Pablo Saraza-Canflanca, J. P. Bastos, Alexander Grill, E. Catapano, Ruben Asanovski, Jacopo Franco, Ben Kaczer, Adrian Chasin, Devin Verreck, S. Ramesh, Laurent Breuil, Antonio Arreghini, S. Rachidi, Y. Jeong, Geert Van den Bosch, Maarten Rosmeulen, Robin Degraeve
2025	—	`conf`	Effects of Temperature and Device-to-Device Variability in pFET-Based Bias Temperature Instability Reservoir Computing. IRPS Yuanyang Guo, Robin Degraeve, Pablo Saraza-Canflanca, Ben Kaczer, Erik Bury, Ingrid Verbauwhede
2025	—	`conf`	Impact of Gate Metal Work Function on 1/f Noise in RMG MOSFETs. IRPS Ruben Asanovski, Hiroaki Arimura, J. Ganguly, Pierpaolo Palestri, Alexander Grill, Ben Kaczer, Naoto Horiguchi, Luca Selmi, Jacopo Franco
2025	—	`conf`	Investigation of Cryogenic Aging in 28 nm CMOS: Suppression of BTI and HCD in Circuits and SRAM. IRPS Javier Diaz-Fortuny, Mahdi Benkhelifa, Alexander Grill, Erik Bury, Robin Degraeve, Ben Kaczer, Hussam Amrouch
2025	—	`conf`	TDDB Reliability Improvement of Low Thermal Budget RMG Stacks. IRPS G. Molinaro, Hiroaki Arimura, S. Sacchi, Andrea Vici, Robin Degraeve, Ben Kaczer, Naoto Horiguchi, M. Houssa, Jacopo Franco
2025	—	`conf`	Towards a Computationally Efficient Verilog-A Defect-Centric BTI Compact Model for Circuit Aging Simulations. IRPS Dishant Sangani, Dieter Claes, Pieter Weckx, Ben Kaczer, Georges G. E. Gielen
2024	—	`conf`	Demonstration of Chip Overclock Detection by Employing Tamper-Aware Odometer Technology. IRPS Javier Diaz-Fortuny, Pablo Saraza-Canflanca, Alex Romano-Molar, Erik Bury, Robin Degraeve, Ben Kaczer
2024	—	`conf`	Exploiting Bias Temperature Instability for Reservoir Computing in Edge Artificial Intelligence Applications. IRPS Y. Guo, Robin Degraeve, Michiel Vandemaele, Pablo Saraza-Canflanca, Jacopo Franco, Ben Kaczer, Erik Bury, Ingrid Verbauwhede
2024	—	`conf`	Fundamental understanding of NBTI degradation mechanism in IGZO channel devices. IRPS Ying Zhao, Pietro Rinaudo, Adrian Vaisman Chasin, Brecht Truijen, Ben Kaczer, Nouredine Rassoul, Harold Dekkers, Attilio Belmonte, Ingrid De Wolf, Gouri Sankar Kar, Jacopo Franco
2024	—	`conf`	Light-Assisted Investigation of the Role of Oxygen Flow during IGZO Deposition on Deep Subgap States and their Evolution Under PBTI. IRPS Pietro Rinaudo, Adrian Vaisman Chasin, Ying Zhao, Ben Kaczer, Nouredine Rassoul, Harold Dekkers, Michiel J. van Setten, Attilio Belmonte, Ingrid De Wolf, Gouri Sankar Kar, Jacopo Franco
2024	—	`conf`	Possible Origins, Identification, and Screening of Silent Data Corruption in Data Centers. IRPS Dishant Sangani, Ben Kaczer, Pieter Weckx, Philippe J. Roussel, Subrat Mishra, Erik Jan Marinissen, Georges G. E. Gielen
2024	—	`conf`	Reducing Reservoir Dimensionality with Phase Space Construction for Simplified Hardware Implementation. ICANN (10) Yuanyang Guo, Robin Degraeve, Philippe Roussel, Ben Kaczer, Erik Bury, Ingrid Verbauwhede
2024	B	`conf`	Silent Data Corruption: Test or Reliability Problem? ETS Erik Jan Marinissen, Harish Dattatraya Dixit, Ronald Shawn Blanton, Aaron Kuo, Wei Li, Subhasish Mitra, Chris Nigh, Ruben Purdy, Ben Kaczer, Dishant Sangani, Pieter Weckx, Philippe J. Roussel, Georges G. E. Gielen
2024	—	`conf`	Statistical Characterization of Off-State Stress Degradation in Planar HKMG nFETs Using Device Arrays. IRPS Pablo Saraza-Canflanca, Dishant Sangani, Javier Diaz-Fortuny, Stanislav Tyaginov, Georges G. E. Gielen, Erik Bury, Ben Kaczer
2024	J	`jnl`	Transition-state-theory-based interpretation of Landau double well potential for ferroelectrics. CoRR Md Nur K. Alam, Sergiu Clima, Ben Kaczer, Philippe Roussel, Brecht Truijen, Lars-Åke Ragnarsson, N. Horiguchi, Marc M. Heyns, Jan Van Houdt
2023	J	`jnl`	A Pragmatic Model to Predict Future Device Aging. IEEE Access James Brown, Kean Hong Tok, Rui Gao, Zhigang Ji, Weidong Zhang, John S. Marsland, Thomas Chiarella, Jacopo Franco, Ben Kaczer, Dimitri Linten, Jianfu Zhang
2023	—	`conf`	Analysis of TDDB lifetime projection in low thermal budget HfO2/SiO2 stacks for sequential 3D integrations. IRPS Andrea Vici, Robin Degraeve, Philippe J. Roussel, Jacopo Franco, Ben Kaczer, Ingrid De Wolf
2023	—	`conf`	Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETs. IRPS L. Panarella, Ben Kaczer, Quentin Smets, Devin Verreck, Tom Schram, Daire Cott, Dennis Lin, Stanislav Tyaginov, Inge Asselberghs, Cesar J. Lockhart de la Rosa, Gouri Sankar Kar, Valeri Afanas'ev
2023	—	`conf`	Improving the Tamper-Aware Odometer Concept by Enhancing Dynamic Stress Operation. IRPS Javier Diaz-Fortuny, Dishant Sangani, Pablo Saraza-Canflanca, Erik Bury, Robin Degraeve, Ben Kaczer
2023	—	`conf`	Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper. IRPS Michiel Vandemaele, Ben Kaczer, Erik Bury, Jacopo Franco, Adrian Chasin, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken
2023	—	`conf`	Novel Low Thermal Budget CMOS RMG: Performance and Reliability Benchmark Against Conventional High Thermal Budget Gate Stack Solutions. VLSI Technology and Circuits Jacopo Franco, Hiroaki Arimura, J.-F. de Marneffe, S. Brus, Romain Ritzenthaler, E. Dentoni Litta, Kris Croes, Ben Kaczer, N. Horiguchi
2023	—	`conf`	Reliability challenges in Forksheet Devices: (Invited Paper). IRPS Erik Bury, Michiel Vandemaele, Jacopo Franco, Adrian Chasin, Stanislav Tyaginov, A. Vandooren, Romain Ritzenthaler, Hans Mertens, Javier Diaz-Fortuny, N. Horiguchi, Dimitri Linten, Ben Kaczer
2023	—	`conf`	The Role of Mobility Degradation in the BTI-Induced RO Aging in a 28-nm Bulk CMOS Technology: (Student paper). IRPS Dishant Sangani, Javier Diaz-Fortuny, Erik Bury, Ben Kaczer, Georges G. E. Gielen
2023	—	`conf`	Using dedicated device arrays for the characterization of TDDB in a scaled HK/MG technology. IRPS Pablo Saraza-Canflanca, Javier Diaz-Fortuny, Andrea Vici, Erik Bury, Robin Degraeve, Ben Kaczer
2022	—	`conf`	A Ring-Oscillator-Based Degradation Monitor Concept with Tamper Detection Capability. IRPS Javier Diaz-Fortuny, Pablo Saraza-Canflanca, Erik Bury, Michiel Vandemaele, Ben Kaczer, Robin Degraeve
2022	—	`conf`	A comprehensive variability study of doped HfO2 FeFET for memory applications. IMW Nicolo Ronchi, Lars-Åke Ragnarsson, Umberto Celano, Ben Kaczer, K. Kaczmarek, K. Banerjee, Sean R. C. McMitchell, Geert Van den Bosch, Jan Van Houdt
2022	—	`conf`	Analysis of BTI in 300 mm integrated dual-gate WS2 FETs. DRC L. Panarella, Quentin Smets, Devin Verreck, Tom Schram, Daire Cott, Inge Asselberghs, Ben Kaczer
2022	—	`conf`	Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery. IRPS J. P. Bastos, Barry J. O'Sullivan, Jacopo Franco, Stanislav Tyaginov, Brecht Truijen, Adrian Vaisman Chasin, Robin Degraeve, Ben Kaczer, Romain Ritzenthaler, Elena Capogreco, E. Dentoni Litta, Alessio Spessot, Yusuke Higashi, Y. Yoon, V. Machkaoutsan, Pierre Fazan, N. Horiguchi
2022	—	`conf`	Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets. IRPS Erik Bury, Adrian Vaisman Chasin, Ben Kaczer, Michiel Vandemaele, Stanislav Tyaginov, Jacopo Franco, Romain Ritzenthaler, Hans Mertens, Pieter Weckx, N. Horiguchi, Dimitri Linten
2022	—	`conf`	Insight to Data Retention loss in ferroelectric Hf0.5Zr0.5O2 pFET and nFET from simultaneous PV and IV measurements. VLSI Technology and Circuits Md Nur K. Alam, Yusuke Higashi, Brecht Truijen, Ben Kaczer, Mihaela Ioana Popovici, Bj O'Sullivan, Philippe Roussel, Robin Degraeve, Marc M. Heyns, Jan Van Houdt
2022	—	`conf`	Modelling ultra-fast threshold voltage instabilities in Hf-based ferroelectrics. IRPS Barry J. O'Sullivan, Brecht Truijen, Vamsi Putcha, Alexander Grill, Adrian Vaisman Chasin, Geert Van den Bosch, Ben Kaczer, Md Nur K. Alam, Jan Van Houdt
2022	—	`conf`	On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-Transistors. IRPS Stanislav Tyaginov, Aryan Afzalian, Alexander Makarov, Alexander Grill, Michiel Vandemaele, Maksim Cherenev, Mikhail I. Vexler, Geert Hellings, Ben Kaczer
2022	—	`conf`	Significant Enhancement of HCD and TDDB in CMOS FETs by Mechanical Stress. IRPS Kookjin Lee, Ben Kaczer, Anastasiia Kruv, Mario Gonzalez, Geert Eneman, Oguzhan O. Okudur, Alexander Grill, Jacopo Franco, Andrea Vici, Robin Degraeve, Ingrid De Wolf
2022	—	`conf`	Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs. IRPS Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Erik Bury, Adrian Vaisman Chasin, Jacopo Franco, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken
2022	—	`conf`	Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors. IRPS Alexander Grill, V. John, Jakob Michl, A. Beckers, Erik Bury, Stanislav Tyaginov, Bertrand Parvais, Adrian Vaisman Chasin, Tibor Grasser, Michael Waltl, Ben Kaczer, Bogdan Govoreanu
2022	—	`conf`	Trap-polarization interaction during low-field trap characterization on hafnia-based ferroelectric gatestacks. IRPS Brecht Truijen, Barry J. O'Sullivan, Md. Nurul Alam, Dieter Claes, Mischa Thesberg, Philippe Roussel, Adrian Vaisman Chasin, Geert Van den Bosch, Ben Kaczer, Jan Van Houdt
2022	—	`conf`	Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors. IRPS Stanislav Tyaginov, Alexander Makarov, Al-Moatasem Bellah El-Sayed, Adrian Vaisman Chasin, Erik Bury, Markus Jech, Michiel Vandemaele, Alexander Grill, An De Keersgieter, Mikhail I. Vexler, Geert Eneman, Ben Kaczer
2021	—	`conf`	A BSIM-Based Predictive Hot-Carrier Aging Compact Model. IRPS Yang Xiang, Stanislav Tyaginov, Michiel Vandemaele, Zhicheng Wu, Jacopo Franco, Erik Bury, Brecht Truijen, Bertrand Parvais, Dimitri Linten, Ben Kaczer
2021	—	`conf`	CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States. IRPS Tibor Grasser, Barry J. O'Sullivan, Ben Kaczer, Jacopo Franco, Bernhard Stampfer, Michael Waltl
2021	—	`conf`	Novel low thermal budget gate stack solutions for BTI reliability in future Logic Device technologies : Invited paper. ICICDT Jacopo Franco, Hiroaki Arimura, J.-F. de Marneffe, A. Vandooren, L.-Å. Ragnarsson, Zhicheng Wu, Dieter Claes, E. Dentoni Litta, N. Horiguchi, Kris Croes, Dimitri Linten, Tibor Grasser, Ben Kaczer
2021	—	`conf`	Physics-based device aging modelling framework for accurate circuit reliability assessment. IRPS Zhicheng Wu, Jacopo Franco, Brecht Truijen, Philippe Roussel, Stanislav Tyaginov, Michiel Vandemaele, Erik Bury, Guido Groeseneken, Dimitri Linten, Ben Kaczer
2021	—	`conf`	Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies. IRPS Gerhard Rzepa, Markus Karner, Oskar Baumgartner, Georg Strof, Franz Schanovsky, Ferdinand Mitterbauer, Christian Kernstock, Hui-Wen Karner, Pieter Weckx, Geert Hellings, Dieter Claes, Zhicheng Wu, Yang Xiang, Thomas Chiarella, Bertrand Parvais, Jérôme Mitard, Jacopo Franco, Ben Kaczer, Dimitri Linten, Zlatan Stanojevic
2021	—	`conf`	The properties, effect and extraction of localized defect profiles from degraded FET characteristics. IRPS Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Jacopo Franco, Robin Degraeve, Adrian Vaisman Chasin, Zhicheng Wu, Erik Bury, Yang Xiang, Hans Mertens, Guido Groeseneken
2020	—	`conf`	A Compact Physics Analytical Model for Hot-Carrier Degradation. IRPS Stanislav Tyaginov, Alexander Grill, Michiel Vandemaele, Tibor Grasser, Geert Hellings, Alexander Makarov, Markus Jech, Dimitri Linten, Ben Kaczer
2020	—	`conf`	Exploring the DC reliability metrics for scaled GaN-on-Si devices targeted for RF/5G applications. IRPS Vamsi Putcha, Erik Bury, Jacopo Franco, Amey Walke, Simeng Zhao, Uthayasankaran Peralagu, Ming Zhao, AliReza Alian, Ben Kaczer, Niamh Waldron, Dimitri Linten, Bertrand Parvais, Nadine Collaert
2020	—	`conf`	Fast & Accurate Methodology for Aging Incorporation in Circuits using Adaptive Waveform Splitting (AWS). IRPS Subrat Mishra, Pieter Weckx, Ji-Yung Lin, Ben Kaczer, Dimitri Linten, Alessio Spessot, Francky Catthoor
2020	—	`conf`	On the impact of mechanical stress on gate oxide trapping. IRPS Anastasiia Kruv, Ben Kaczer, Alexander Grill, Mario Gonzalez, Jacopo Franco, Dimitri Linten, Wolfgang Goes, Tibor Grasser, Ingrid De Wolf
2020	—	`conf`	Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures. IRPS Jakob Michl, Alexander Grill, Dieter Claes, Gerhard Rzepa, Ben Kaczer, Dimitri Linten, Iuliana P. Radu, Tibor Grasser, Michael Waltl
2020	—	`conf`	Relevance of fin dimensions and high-pressure anneals on hot-carrier degradation. IRPS Adrian Vaisman Chasin, Jacopo Franco, Erik Bury, Romain Ritzenthaler, Eugenio Dentoni Litta, Alessio Spessot, Naoto Horiguchi, Dimitri Linten, Ben Kaczer
2020	—	`conf`	Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures. IRPS Alexander Grill, Erik Bury, Jakob Michl, Stanislav Tyaginov, Dimitri Linten, Tibor Grasser, Bertrand Parvais, Ben Kaczer, Michael Waltl, Iuliana P. Radu
2020	—	`conf`	The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation. IRPS Michiel Vandemaele, Kai-Hsin Chuang, Erik Bury, Stanislav Tyaginov, Guido Groeseneken, Ben Kaczer
2020	—	`conf`	The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release. IRPS Tibor Grasser, Ben Kaczer, Barry J. O'Sullivan, Gerhard Rzepa, Bernhard Stampfer, Michael Waltl
2019	J	`jnl`	A Physically Unclonable Function Using Soft Oxide Breakdown Featuring 0% Native BER and 51.8 fJ/bit in 40-nm CMOS. IEEE J. Solid State Circuits Kai-Hsin Chuang, Erik Bury, Robin Degraeve, Ben Kaczer, Dimitri Linten, Ingrid Verbauwhede
2019	—	`conf`	Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling. IRPS Zhicheng Wu, Jacopo Franco, Dieter Claes, Gerhard Rzepa, Philippe J. Roussel, Nadine Collaert, Guido Groeseneken, Dimitri Linten, Tibor Grasser, Ben Kaczer
2019	—	`conf`	Array-Based Statistical Characterization of CMOS Degradation Modes and Modeling of the Time-Dependent Variability Induced by Different Stress Patterns in the {V IRPS Erik Bury, Adrian Vaisman Chasin, Michiel Vandemaele, Simon Van Beek, Jacopo Franco, Ben Kaczer, Dimitri Linten
2019	—	`conf`	CDM-Time Domain Turn-on Transient of ESD Diodes in Bulk FinFET and GAA NW Technologies. IRPS Shih-Hung Chen, Dimitri Linten, Geert Hellings, Marko Simicic, Ben Kaczer, Thomas Chiarella, Hans Mertens, Jérôme Mitard, Anda Mocuta, N. Horiguchi
2019	—	`conf`	Full (V IRPS Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Zlatan Stanojevic, Alexander Makarov, Adrian Vaisman Chasin, Erik Bury, Hans Mertens, Dimitri Linten, Guido Groeseneken
2019	—	`conf`	Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices. IRPS Barry J. O'Sullivan, Romain Ritzenthaler, Gerhard Rzepa, Z. Wu, E. Dentoni Litta, O. Richard, T. Conard, V. Machkaoutsan, Pierre Fazan, C. Kim, Jacopo Franco, Ben Kaczer, Tibor Grasser, Alessio Spessot, Dimitri Linten, N. Horiguchi
2019	—	`conf`	Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs. IRPS Alexander Makarov, Ben Kaczer, Philippe Roussel, Adrian Vaisman Chasin, Alexander Grill, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Tibor Grasser, Dimitri Linten, Stanislav Tyaginov
2019	—	`conf`	New Insights into the Imprint Effect in FE-HfO2 and its Recovery. IRPS Yusuke Higashi, Karine Florent, A. Subirats, Ben Kaczer, Luca Di Piazza, Sergiu Clima, Nicolo Ronchi, Sean R. C. McMitchell, Kaustuv Banerjee, Umberto Celano, Masamichi Suzuki, Dimitri Linten, Jan Van Houdt
2019	—	`conf`	Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants. ESSDERC Alexander Makarov, Dimitri Linten, Stanislav Tyaginov, Ben Kaczer, Philippe Roussel, Adrian Vaisman Chasin, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Markus Jech, Tibor Grasser
2019	J	`jnl`	Understanding the Impact of Time-Dependent Random Variability on Analog ICs: From Single Transistor Measurements to Circuit Simulations. IEEE Trans. Very Large Scale Integr. Syst. Marko Simicic, Pieter Weckx, Bertrand Parvais, Philippe Roussel, Ben Kaczer, Georges G. E. Gielen
2018	—	`conf`	A Physically Unclonable Function with 0% BER Using Soft Oxide Breakdown in 40nm CMOS. A-SSCC Kai-Hsin Chuang, Erik Bury, Robin Degraeve, Ben Kaczer, Dimitri Linten, Ingrid Verbauwhede
2018	J	`jnl`	A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability. Microelectron. Reliab. Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Vamsi Putcha, Erik Bury, Marko Simicic, Adrian Vaisman Chasin, Dimitri Linten, Bertrand Parvais, Francky Catthoor, Gerhard Rzepa, Michael Waltl, Tibor Grasser
2018	—	`conf`	A multi-bit/cell PUF using analog breakdown positions in CMOS. IRPS Kai-Hsin Chuang, Erik Bury, Robin Degraeve, Ben Kaczer, T. Kallstenius, Guido Groeseneken, Dimitri Linten, Ingrid Verbauwhede
2018	—	`conf`	Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors. IRPS Tibor Grasser, Bernhard Stampfer, Michael Waltl, Gerhard Rzepa, Karl Rupp, Franz Schanovsky, Gregor Pobegen, Katja Puschkarsky, Hans Reisinger, Barry J. O'Sullivan, Ben Kaczer
2018	J	`jnl`	Comphy - A compact-physics framework for unified modeling of BTI. Microelectron. Reliab. Gerhard Rzepa, Jacopo Franco, Barry J. O'Sullivan, A. Subirats, Marko Simicic, Geert Hellings, Pieter Weckx, Markus Jech, Theresia Knobloch, Michael Waltl, Philippe Roussel, Dimitri Linten, Ben Kaczer, Tibor Grasser
2018	—	`conf`	Experimental extraction of BEOL composite equivalent thermal conductivities for application in self-heating simulations. ESSDERC Erik Bury, Ben Kaczer, Simon Van Beek, Dimitri Linten
2018	—	`conf`	Hot electron and hot hole induced degradation of SiGe p-FinFETs studied by degradation maps in the entire bias space. IRPS Jacopo Franco, Ben Kaczer, Adrian Vaisman Chasin, Erik Bury, Dimitri Linten
2018	—	`conf`	Impact of slow and fast oxide traps on In0.53Ga0.47As device operation studied using CET maps. IRPS Vamsi Putcha, Jacopo Franco, Abhitosh Vais, Ben Kaczer, S. Sioncke, Dimitri Linten, Guido Groeseneken
2018	—	`conf`	Investigation of the endurance of FE-HfO2 devices by means of TDDB studies. IRPS Karine Florent, A. Subirats, Simone Lavizzari, Robin Degraeve, Umberto Celano, Ben Kaczer, Luca Di Piazza, Mihaela Ioana Popovici, Guido Groeseneken, Jan Van Houdt
2018	—	`conf`	Self-heating-aware CMOS reliability characterization using degradation maps. IRPS Erik Bury, Adrian Vaisman Chasin, Ben Kaczer, Kai-Hsin Chuang, Jacopo Franco, Marko Simicic, Pieter Weckx, Dimitri Linten
2016	—	`conf`	A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs. ESSDERC Prateek Sharma, Stanislav Tyaginov, Stewart E. Rauch, Jacopo Franco, Ben Kaczer, Alexander Makarov, Mikhail I. Vexler, Tibor Grasser
2016	A	`conf`	Analysis of NBTI effects on high frequency digital circuits. DATE Ahmet Unutulmaz, Domenik Helms, Reef Eilers, Malte Metzdorf, Ben Kaczer, Wolfgang Nebel
2016	—	`conf`	Capturing True Workload Dependency of BTI-induced Degradation in CPU Components. ACM Great Lakes Symposium on VLSI Dimitrios Stamoulis, Simone Corbetta, Dimitrios Rodopoulos, Pieter Weckx, Peter Debacker, Brett H. Meyer, Ben Kaczer, Praveen Raghavan, Dimitrios Soudris, Francky Catthoor, Zeljko Zilic
2016	—	`conf`	Probing defects generation during stress in high-κ/metal gate FinFETs by random telegraph noise characterization. ESSDERC Francesco Maria Puglisi, Felipe Costantini, Ben Kaczer, Luca Larcher, Paolo Pavan
2015	C	`conf`	Characterization and modeling of reliability issues in nanoscale devices. ISCAS Gerhard Rzepa, Wolfgang Goes, Ben Kaczer, Tibor Grasser
2015	—	`conf`	Characterization and simulation methodology for time-dependent variability in advanced technologies. CICC Pieter Weckx, Ben Kaczer, Praveen Raghavan, Jacopo Franco, Marko Simicic, Philippe J. Roussel, Dimitri Linten, Aaron Thean, Diederik Verkest, Francky Catthoor, Guido Groeseneken
2015	—	`conf`	Characterization of time-dependent variability using 32k transistor arrays in an advanced HK/MG technology. IRPS Pieter Weckx, Ben Kaczer, C. Chen, Jacopo Franco, Erik Bury, Kaushik Chanda, J. Watt, Philippe J. Roussel, Francky Catthoor, Guido Groeseneken
2015	J	`jnl`	Comparison of NBTI aging on adder architectures and ring oscillators in the downscaling technology nodes. Microprocess. Microsystems Halil Kükner, Pieter Weckx, Sébastien Morrison, Jacopo Franco, Maria Toledano-Luque, Moonju Cho, Praveen Raghavan, Ben Kaczer, Doyoung Jang, Kenichi Miyaguchi, Marie Garcia Bardon, Francky Catthoor, Liesbet Van der Perre, Rudy Lauwereins, Guido Groeseneken
2015	—	`conf`	ESD characterization of planar InGaAs devices. IRPS Zhigang Ji, Dimitri Linten, Roman Boschke, Geert Hellings, S. H. Chen, AliReza Alian, D. Zhou, Yves Mols, Tsvetan Ivanov, Jacopo Franco, Ben Kaczer, X. Zhang, R. Gao, Jianfu Zhang, Weidong Zhang, Nadine Collaert, Guido Groeseneken
2015	—	`conf`	Experimental evidences and simulations of trap generation along a percolation path. ESSDERC Louis Gerrer, Razaidi Hussin, Salvatore M. Amoroso, Jacopo Franco, Pieter Weckx, Marko Simicic, N. Horiguchi, Ben Kaczer, Tibor Grasser, Asen Asenov
2015	—	`conf`	Impact of random telegraph noise on ring oscillators evaluated by circuit-level simulations. ICICDT Azusa Oshima, Pieter Weckx, Ben Kaczer, Kazutoshi Kobayashi, Takashi Matsumoto
2015	—	`conf`	Impact of time-dependent variability on the yield and performance of 6T SRAM cells in an advanced HK/MG technology. ICICDT Pieter Weckx, Ben Kaczer, Philippe J. Roussel, Francky Catthoor, Guido Groeseneken
2015	—	`conf`	NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures. IRPS Jacopo Franco, Ben Kaczer, Philippe J. Roussel, Erik Bury, Hans Mertens, Romain Ritzenthaler, Tibor Grasser, Naoto Horiguchi, Aaron Thean, Guido Groeseneken
2015	—	`conf`	Off-state stress degradation mechanism on advanced p-MOSFETs. ICICDT Moonju Cho, Alessio Spessot, Ben Kaczer, Marc Aoulaiche, Romain Ritzenthaler, Tom Schram, Pierre Fazan, Naoto Horiguchi, Dimitri Linten
2015	—	`conf`	On the volatility of oxide defects: Activation, deactivation, and transformation. IRPS Tibor Grasser, M. Wahl, Wolfgang Goes, Yannick Wimmer, Al-Moatasem El-Sayed, Alexander L. Shluger, Ben Kaczer
2015	—	`conf`	Origins and implications of increased channel hot carrier variability in nFinFETs. IRPS Ben Kaczer, Jacopo Franco, M. Cho, Tibor Grasser, Philippe J. Roussel, Stanislav Tyaginov, M. Bina, Yannick Wimmer, Luis-Miguel Procel, Lionel Trojman, Felice Crupi, Gregory Pitner, Vamsi Putcha, Pieter Weckx, Erik Bury, Z. Ji, An De Keersgieter, Thomas Chiarella, Naoto Horiguchi, Guido Groeseneken, Aaron Thean
2015	—	`conf`	Statistical simulations of 6T-SRAM cell ageing using a reliability aware simulation flow. ESSDERC Razaidi Hussin, Louis Gerrer, Jie Ding, Liping Wang, Salvatore M. Amoroso, Binjie Cheng, Dave Reid, Pieter Weckx, Marko Simicic, Jacopo Franco, Annelies Vanderheyden, Danielle Vanhaeren, Naoto Horiguchi, Ben Kaczer, Asen Asenov
2015	—	`conf`	The defect-centric perspective of device and circuit reliability - From individual defects to circuits. ESSDERC Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Erik Bury, Moonju Cho, Robin Degraeve, Dimitri Linten, Guido Groeseneken, Halil Kukner, Praveen Raghavan, Francky Catthoor, Gerhard Rzepa, Wolfgang Gös, Tibor Grasser
2015	—	`conf`	Time dependent variability in RMG-HKMG FinFETs: Impact of extraction scheme on stochastic NBTI. IRPS Ankush Chaudhary, Ben Kaczer, Philippe J. Roussel, Thomas Chiarella, Naoto Horiguchi, Souvik Mahapatra
2014	A	`conf`	Bias Temperature Instability analysis of FinFET based SRAM cells. DATE Seyab Khan, Innocent Agbo, Said Hamdioui, Halil Kukner, Ben Kaczer, Praveen Raghavan, Francky Catthoor
2014	—	`conf`	Characterization and modeling of charge trapping: From single defects to devices. ICICDT Tibor Grasser, Gerhard Rzepa, Michael Waltl, Wolfgang Goes, Karina Rott, Gunnar Andreas Rott, Hans Reisinger, Jacopo Franco, Ben Kaczer
2014	J	`jnl`	Circuit simulation of workload-dependent RTN and BTI based on trap kinetics. Microelectron. Reliab. Vinicius V. A. Camargo, Ben Kaczer, Tibor Grasser, Gilson I. Wirth
2014	—	`conf`	Degradation analysis of datapath logic subblocks under NBTI aging in FinFET technology. ISQED Halil Kukner, Moustafa A. Khatib, Sebastien Morrison, Pieter Weckx, Praveen Raghavan, Ben Kaczer, Francky Catthoor, Liesbet Van der Perre, Rudy Lauwereins, Guido Groeseneken
2014	J	`jnl`	Energy distribution of positive charges in high-k dielectric. Microelectron. Reliab. Sharifah Wan Muhamad Hatta, Zhigang Ji, Jianfu Zhang, Weidong Zhang, Norhayati Soin, Ben Kaczer, Stefan De Gendt, Guido Groeseneken
2014	—	`conf`	Impact of Off State Stress on advanced high-K metal gate NMOSFETs. ESSDERC Alessio Spessot, Marc Aoulaiche, Moonju Cho, Jacopo Franco, Tom Schram, Romain Ritzenthaler, Ben Kaczer
2014	C	`conf`	NBTI Aging on 32-Bit Adders in the Downscaling Planar FET Technology Nodes. DSD Halil Kukner, Pieter Weckx, Sebastien Morrison, Praveen Raghavan, Ben Kaczer, Francky Catthoor, Liesbet Van der Perre, Rudy Lauwereins, Guido Groeseneken
2014	—	`conf`	On reliability enhancement using adaptive core voltage scaling and variations on nanoscale FPGAs. LATW Petr Pfeifer, Zdenek Plíva, Pieter Weckx, Ben Kaczer
2014	J	`jnl`	Use of SSTA Tools for Evaluating BTI Impact on Combinational Circuits. IEEE Trans. Very Large Scale Integr. Syst. Vinicius V. A. Camargo, Ben Kaczer, Gilson I. Wirth, Tibor Grasser, Guido Groeseneken
2013	J	`jnl`	Impact of duty factor, stress stimuli, gate and drive strength on gate delay degradation with an atomistic trap-based BTI model. Microprocess. Microsystems Halil Kükner, Pieter Weckx, Praveen Raghavan, Ben Kaczer, Francky Catthoor, Liesbet Van der Perre, Rudy Lauwereins, Guido Groeseneken
2012	J	`jnl`	BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic. Microelectron. Reliab. Jacopo Franco, S. Graziano, Ben Kaczer, Felice Crupi, Lars-Åke Ragnarsson, Tibor Grasser, Guido Groeseneken
2012	J	`jnl`	Buried Silicon-Germanium pMOSFETs: Experimental Analysis in VLSI Logic Circuits Under Aggressive Voltage Scaling. IEEE Trans. Very Large Scale Integr. Syst. Felice Crupi, Massimo Alioto, Jacopo Franco, Paolo Magnone, Ben Kaczer, Guido Groeseneken, Jérôme Mitard, Liesbeth Witters, Thomas Y. Hoffmann
2012	J	`jnl`	Defect-centric perspective of time-dependent BTI variability. Microelectron. Reliab. Maria Toledano-Luque, Ben Kaczer, Jacopo Franco, Philippe Roussel, Tibor Grasser, Guido Groeseneken
2012	C	`conf`	Impact of Duty Factor, Stress Stimuli, and Gate Drive Strength on Gate Delay Degradation with an Atomistic Trap-Based BTI Model. DSD Halil Kukner, Pieter Weckx, Praveen Raghavan, Ben Kaczer, Francky Catthoor, Liesbet Van der Perre, Rudy Lauwereins, Guido Groeseneken
2012	—	`conf`	Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications. ICICDT Jacopo Franco, Ben Kaczer, Jérôme Mitard, Maria Toledano-Luque, Felice Crupi, Geert Eneman, Ph. J. Rousse, Tibor Grasser, M. Cho, Thomas Kauerauf, Liesbeth Witters, Geert Hellings, L.-Å. Ragnarsson, Naoto Horiguchi, Marc M. Heyns, Guido Groeseneken
2011	C	`conf`	Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling. ISCAS Felice Crupi, Massimo Alioto, Jacopo Franco, Paolo Magnone, Ben Kaczer, Guido Groeseneken, Jérôme Mitard, Liesbeth Witters, Thomas Y. Hoffmann
2011	J	`jnl`	Understanding the Potential and the Limits of Germanium pMOSFETs for VLSI Circuits From Experimental Measurements. IEEE Trans. Very Large Scale Integr. Syst. Paolo Magnone, Felice Crupi, Massimo Alioto, Ben Kaczer, Brice De Jaeger
2010	C	`conf`	Experimental study of leakage-delay trade-off in Germanium pMOSFETs for logic circuits. ISCAS Paolo Magnone, Felice Crupi, Massimo Alioto, Ben Kaczer
2009	J	`jnl`	A CMOS circuit for evaluating the NBTI over a wide frequency range. Microelectron. Reliab. R. Fernández-García, Ben Kaczer, Guido Groeseneken
2008	A	`conf`	Emerging Yield and Reliability Challenges in Nanometer CMOS Technologies. DATE Georges G. E. Gielen, Pieter De Wit, Elie Maricau, Johan Loeckx, Javier Martín-Martínez, Ben Kaczer, Guido Groeseneken, Rosana Rodríguez, Montserrat Nafría
2007	J	`jnl`	Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability. Microelectron. Reliab. Ben Kaczer, Robin Degraeve, Philippe Roussel, Guido Groeseneken
2007	J	`jnl`	NBTI reliability of Ni FUSI/HfSiON gates: Effect of silicide phase. Microelectron. Reliab. A. Shickova, Ben Kaczer, Anabela Veloso, Marc Aoulaiche, M. Houssa, Herman E. Maes, Guido Groeseneken, J. A. Kittl
2006	J	`jnl`	FinFET and MOSFET preliminary comparison of gate oxide reliability. Microelectron. Reliab. Raul Fernández, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Ben Kaczer, Guido Groeseneken
2006	C	`conf`	Reliability issues in deep deep sub-micron technologies: time-dependent variability and its impact on embedded system design. VLSI-SoC Antonis Papanikolaou, Miguel Miranda, Hua Wang, Francky Catthoor, M. Satyakiran, Pol Marchal, Ben Kaczer, C. Bruynseraede, Zsolt Tokei
2005	J	`jnl`	Progressive breakdown in ultrathin SiON dielectrics and its effect on transistor performance. Microelectron. Reliab. Robert O'Connor, Greg Hughes, Robin Degraeve, Ben Kaczer
2003	J	`jnl`	A new method for the analysis of high-resolution SILC data. Microelectron. Reliab. Stefano Aresu, Ward De Ceuninck, G. Knuyt, J. Mertens, Jean Manca, Luc De Schepper, Robin Degraeve, Ben Kaczer, Marc D'Olieslaeger, Jan D'Haen
2002	J	`jnl`	Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study. Microelectron. Reliab. Ben Kaczer, Robin Degraeve, Mahmoud Rasras, An De Keersgieter, K. Van de Mieroop, Guido Groeseneken
2002	J	`jnl`	High-resolution SILC measurements of thin SiO Microelectron. Reliab. Stefano Aresu, Ward De Ceuninck, R. Dreesen, Kris Croes, E. Andries, Jean Manca, Luc De Schepper, Robin Degraeve, Ben Kaczer, Marc D'Olieslaeger