Behzad Ebrahimi

23 papers Journal 19Unranked 4
YearRankTypeTitle / Venue / Authors
2025 J jnl
Novel hybrid TFET-FinFET 12T SRAM cells with enhanced write margin and read performance.
Integr.
Seyed Arman Sabaghpour, Behzad Ebrahimi, Pooya Torkzadeh
2023 J jnl
Accurate and Compact Approximate 4:2 Compressors with GDI Structure.
Circuits Syst. Signal Process.
Mohammad Ghanatabadi, Behzad Ebrahimi, Omid Akbari
2023 J jnl
BEAD: Bounded error approximate adder with carry and sum speculations.
Integr.
Afshin Khaksari, Omid Akbari, Behzad Ebrahimi
2022 J jnl
A 1-GHz GC-eDRAM in 7-nm FinFET with static retention time at 700 mV for ultra-low power on-chip memory applications.
Int. J. Circuit Theory Appl.
Bahareh Seyedzadeh Sany, Behzad Ebrahimi
2021 J jnl
HPM: High-Precision Modeling of a Low-Power Inverter-Based Memristive Neural Network.
J. Circuits Syst. Comput.
Negin Mohajeri, Behzad Ebrahimi, Massoud Dousti
2021 J jnl
Single-Ended 10T SRAM Cell with High Yield and Low Standby Power.
Circuits Syst. Signal Process.
Erfan Shakouri, Behzad Ebrahimi, Nima Eslami, Mohammad Chahardori
2019 J jnl
Low-power data encoding/decoding for energy-efficient static random access memory design.
IET Circuits Devices Syst.
Ghasem Pasandi, Kolsoom Mehrabi, Behzad Ebrahimi, Sied Mehdi Fakhraei, Ali Afzali-Kusha, Massoud Pedram
2016 J jnl
Read static noise margin aging model considering SBD and BTI effects for FinFET SRAMs.
Microelectron. Reliab.
Kolsoom Mehrabi, Behzad Ebrahimi, Roohollah Yarmand, Ali Afzali-Kusha, Hamid Mahmoodi
2015 J jnl
A FinFET SRAM cell design with BTI robustness at high supply voltages and high yield at low supply voltages.
Int. J. Circuit Theory Appl.
Behzad Ebrahimi, Reza Asadpour, Ali Afzali-Kusha, Massoud Pedram
2015 J jnl
A near-threshold 7T SRAM cell with high write and read margins and low write time for sub-20 nm FinFET technologies.
Integr.
Mohammad Ansari, Hassan Afzali-Kusha, Behzad Ebrahimi, Zainalabedin Navabi, Ali Afzali-Kusha, Massoud Pedram
2015 — conf
High-performance and high-yield 5 nm underlapped FinFET SRAM design using P-type access transistors.
ISQED
Roohollah Yarmand, Behzad Ebrahimi, Hassan Afzali-Kusha, Ali Afzali-Kusha, Massoud Pedram
2014 J jnl
Robust FinFET SRAM design based on dynamic back-gate voltage adjustment.
Microelectron. Reliab.
Behzad Ebrahimi, Ali Afzali-Kusha, Hamid Mahmoodi
2013 J jnl
An analytical model for read static noise margin including soft oxide breakdown, negative and positive bias temperature instabilities.
Microelectron. Reliab.
Behrouz Afzal, Behzad Ebrahimi, Ali Afzali-Kusha, Hamid Mahmoodi
2013 — conf
Robust polysilicon gate FinFET SRAM design using dynamic back-gate bias.
DTIS
Behzad Ebrahimi, Ali Afzali-Kusha, Nader Sehatbakhsh
2012 J jnl
An accurate analytical I-V model for sub-90-nm MOSFETs and its application to read static noise margin modeling.
J. Zhejiang Univ. Sci. C
Behrouz Afzal, Behzad Ebrahimi, Ali Afzali-Kusha, Massoud Pedram
2012 J jnl
G4-FET modeling for circuit simulation by adaptive neuro-fuzzy training systems.
IEICE Electron. Express
Hossein Aghababa, Behzad Ebrahimi, Mehdi Saremi, Vahid Moalemi, Behjat Forouzandeh
2012 J jnl
Modeling read SNM considering both soft oxide breakdown and negative bias temperature instability.
Microelectron. Reliab.
Behrouz Afzal, Behzad Ebrahimi, Ali Afzali-Kusha, Hamid Mahmoodi
2012 J jnl
Probability calculation of read failures in nano-scaled SRAM cells under process variations.
Microelectron. Reliab.
Hossein Aghababa, Behzad Ebrahimi, Ali Afzali-Kusha, Massoud Pedram
2011 J jnl
A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement.
Microelectron. Reliab.
Mehdi Saremi, Behzad Ebrahimi, Ali Afzali-Kusha, Saeed Mohammadi
2011 J jnl
Statistical Design Optimization of FinFET SRAM Using Back-Gate Voltage.
IEEE Trans. Very Large Scale Integr. Syst.
Behzad Ebrahimi, Masoud Rostami, Ali Afzali-Kusha, Massoud Pedram
2010 J jnl
A Microfabricated Phantom for Quantitative MR Perfusion Measurements: Validation of Singular Value Decomposition Deconvolution Method.
IEEE Trans. Biomed. Eng.
Behzad Ebrahimi, Scott D. Swanson, Timothy E. Chupp
2008 — conf
Low Standby Power and Robust FinFET Based SRAM Design.
ISVLSI
Behzad Ebrahimi, Saeed Zeinolabedinzadeh, Ali Afzali-Kusha
2007 — conf
The effect of noise and depolarization on hyperpolarized tracers perfusion assessment.
ISBI
Behzad Ebrahimi, Scott D. Swanson, Timothy E. Chupp