Baudouin Martineau

27 papers C 1Journal 5Unranked 21

Year	Rank	Type	Title / Venue / Authors
2025	—	`conf`	Direct Magnitude and Phase Measurement in an Inductorless Integrated Vector Network Analyzer for Wideband Ambient Environment Sensing. NewCAS Ghita Yaakoubi, Baudouin Martineau
2025	—	`conf`	LO Leakage Cancellation Using Upconverter Mixer Transistors Back-Gate Bias Control in a 22 nm FDSOI 39 GHz Transceiver. ICECS Jérôme Prouvée, Olivier Guille, Baudouin Martineau, Cedric Dehos, Abdelaziz Hamani, Dominique Morche
2025	C	`conf`	Ultra-Thin-Body and Buried Oxide FD-SOI next generation nodes and eNVM technologies for advanced IC design. DDECS Claire Fenouillet-Béranger, Laurent Fesquet, Rihab Chouk, Gabriel Pares, Baudouin Martineau, Marie Claire Cyrille, Thierry Poiroux, Olivier Billoint, Dominique Noguet
2023	—	`conf`	A compact bidirectional reconfigurable 2 PRIME Lucien Paquien, Baudouin Martineau, Didier Belot, Nathalie Deltimple
2023	—	`conf`	Design of a 37-40GHz bidirectional amplifier for 5G FR2 radio beamforming systems in 22nm CMOS FD-SOI. ICECS Lucien Paquien, Baudouin Martineau, Didier Belot, Nathalie Deltimple
2023	J	`jnl`	SamurAI: A Versatile IoT Node With Event-Driven Wake-Up and Embedded ML Acceleration. CoRR Ivan Miro-Panades, Benoît Tain, Jean-Frédéric Christmann, David Coriat, Romain Lemaire, Clement Jany, Baudouin Martineau, Fabrice Chaix, Guillaume Waltener, Emmanuel Pluchart, Jean-Philippe Noel, Adam Makosiej, Maxime Montoya, Simone Bacles-Min, David Briand, Jean-Marc Philippe, Yvain Thonnart, Alexandre Valentian, Frédéric Heitzmann, Fabien Clermidy
2023	J	`jnl`	SamurAI: A Versatile IoT Node With Event-Driven Wake-Up and Embedded ML Acceleration. IEEE J. Solid State Circuits Ivan Miro-Panades, Benoît Tain, Jean-Frédéric Christmann, David Coriat, Romain Lemaire, Clement Jany, Baudouin Martineau, Fabrice Chaix, Guillaume Waltener, Emmanuel Pluchart, Jean-Philippe Noel, Adam Makosiej, Maxime Montoya, Simone Bacles-Min, David Briand, Jean-Marc Philippe, Yvain Thonnart, Alexandre Valentian, Frédéric Heitzmann, Fabien Clermidy
2022	—	`conf`	Highly robust and reliable power amplifiers in 22FDX and 45RFSOI technologies. ESSDERC A. Bossuet, A. Divay, Baudouin Martineau, Cedric Dehos, B. Blampey, Y. Morandini
2020	—	`conf`	SamurAI: A 1.7MOPS-36GOPS Adaptive Versatile IoT Node with 15, 000× Peak-to-Idle Power Reduction, 207ns Wake-Up Time and 1.3TOPS/W ML Efficiency. VLSI Circuits Ivan Miro Panades, Benoît Tain, Jean-Frédéric Christmann, David Coriat, Romain Lemaire, Clement Jany, Baudouin Martineau, Fabrice Chaix, Anthony Quelen, Emmanuel Pluchart, Jean-Philippe Noel, Reda Boumchedda, Adam Makosiej, Maxime Montoya, Simone Bacles-Min, David Briand, Jean-Marc Philippe, Alexandre Valentian, Frédéric Heitzmann, Edith Beigné, Fabien Clermidy
2019	—	`conf`	New Design Opportunities exploiting FDSOI technology for RF Power Amplifier and LNA design. NEWCAS Frédéric Hameau, Jennifer Zaini, Thierry Taris, Dominique Morche, Baudouin Martineau, Patrick Audebert
2018	—	`conf`	A 12 Gb/s 64QAM and OFDM compatible millimeter-wave communication link using a novel plastic waveguide design. RWS Florian Voineau, Cedric Dehos, Baudouin Martineau, Mathilde Sié, Michael Perchicot, Nhu Huan Nguyen, Anthony Ghiotto, Eric Kerherve
2018	—	`conf`	Benefits of Joint Optimization of Tunable Wake-up Radio Architecture and Protocols. ICECS Mickael Maman, Dominique Morche, Baudouin Martineau, Clement Jany, Ivan Miro Panades, Anthony Quelen, Franck Badets, Edith Beigné
2015	—	`conf`	2.10 A 60GHz 28nm UTBB FD-SOI CMOS reconfigurable power amplifier with 21% PAE, 18.2dBm P1dB and 74mW PDC. ISSCC Aurelien Larie, Eric Kerherve, Baudouin Martineau, Lionel Vogt, Didier Belot
2014	—	`conf`	A 1.2V 20 dBm 60 GHz power amplifier with 32.4 dB Gain and 20 % Peak PAE in 65nm CMOS. ESSCIRC Aurelien Larie, Eric Kerherve, Baudouin Martineau, Vincent Knopik, Didier Belot
2012	—	`conf`	A 60GHz class F-E power VCO with vector-modulator feedback in 65nm CMOS technology. ICECS Sophie Drean, Nicolas Martin, Nathalie Deltimple, Eric Kerherve, Baudouin Martineau, Didier Belot
2012	—	`conf`	A 65nm CMOS 60 GHz class F-E power amplifier for WPAN applications. SBCCI Sophie Drean, Nathalie Deltimple, Eric Kerherve, Baudouin Martineau, Didier Belot
2012	J	`jnl`	On the electrical properties of slotted metallic planes in CMOS processes for RF and millimeter-wave applications. Microelectron. J. José Luis González, Baudouin Martineau, Didier Belot
2011	—	`conf`	A 20-23GHz Coupled Oscillators Array in 65nm CMOS for HDR 60GHz beamforming applications. ESSCIRC Mathieu Egot, Baudouin Martineau, Olivier Richard, Nathalie Rolland, Andreia Cathelin, Andreas Kaiser
2011	J	`jnl`	A 65-nm CMOS Fully Integrated Transceiver Module for 60-GHz Wireless HD Applications. IEEE J. Solid State Circuits Alexandre Siligaris, Olivier Richard, Baudouin Martineau, Christopher Mounet, Fabrice Chaix, Romain Ferragut, Cedric Dehos, Jérôme Lantéri, Laurent Dussopt, Silas D. Yamamoto, Romain Pilard, Pierre Busson, Andreia Cathelin, Didier Belot, Pierre Vincent
2011	—	`conf`	A 65nm CMOS fully integrated transceiver module for 60GHz wireless HD applications. ISSCC Alexandre Siligaris, Olivier Richard, Baudouin Martineau, Christopher Mounet, Fabrice Chaix, Romain Ferragut, Cedric Dehos, Jérôme Lantéri, Laurent Dussopt, Silas D. Yamamoto, Romain Pilard, Pierre Busson, Andreia Cathelin, Didier Belot, Pierre Vincent
2010	—	`conf`	A 53-to-68GHz 18dBm power amplifier with an 8-way combiner in standard 65nm CMOS. ISSCC Baudouin Martineau, Vincent Knopik, Alexandre Siligaris, Frederic Gianesello, Didier Belot
2010	J	`jnl`	A 60 GHz Power Amplifier With 14.5 dBm Saturation Power and 25% Peak PAE in CMOS 65 nm SOI. IEEE J. Solid State Circuits Alexandre Siligaris, Yasuhiro Hamada, Christopher Mounet, Christine Raynaud, Baudouin Martineau, Nicolas Deparis, Nathalie Rolland, Muneo Fukaishi, Pierre Vincent
2010	—	`conf`	A comparison between grounded and floating shield inductors for mmW VCOs. ESSCIRC José Luis González, Xavier Aragonès, Marc Molina, Baudouin Martineau, Didier Belot
2009	—	`conf`	A 60GHz power amplifier with 14.5dBm saturation power and 25% peak PAE in CMOS 65nm SOI. ESSCIRC Alexandre Siligaris, Yasuhiro Hamada, Christopher Mounet, Christine Raynaud, Baudouin Martineau, Nicolas Deparis, Nathalie Rolland, Muneo Fukaishi, Pierre Vincent
2007	—	`conf`	80 GHz low noise amplifiers in 65nm CMOS SOI. ESSCIRC Baudouin Martineau, Andreia Cathelin, François Danneville, Andreas Kaiser, Gilles Dambrine, Sylvie Lépilliet, Frederic Gianesello, Didier Belot
2007	—	`conf`	Design for millimeter-wave applications in silicon technologies. ESSCIRC Andreia Cathelin, Baudouin Martineau, N. Seller, S. Douyere, Jean Gorisse, Sébastien Pruvost, Christine Raynaud, Frederic Gianesello, Sébastien Montusclat, Sorin P. Voinigescu, Ali M. Niknejad, Didier Belot, Jean-Pierre Schoellkopf
2005	—	`conf`	20 dBm CMOS class AB power amplifier design for low cost 2 GHz-2.45 GHz consumer applications in a 0.13µm technology. ISCAS (3) Vincent Knopik, Didier Belot, Baudouin Martineau