Barry P. Linder

15 papers Journal 5Unranked 10
YearRankTypeTitle / Venue / Authors
2022 — conf
A Flexible and Inherently Self-Consistent Methodology for MOL/BEOL/MIMCAP TDDB Applications with Excessive Variability-Induced Degradation.
IRPS
Ernest Y. Wu, Ron Bolam, Baozhen Li, Tian Shen, Barry P. Linder, Griselda Bonilla, Miaomiao Wang, Dechao Guo
2019 — conf
Long Term NBTI Relaxation Under AC and DC Biased Stress and Recovery.
IRPS
Elnatan Mataev, James H. Stathis, Giuseppe La Rosa, Barry P. Linder
2019 — conf
Transformation of Ramped Current Stress VBDto Constant Voltage Stress TDDB TBD.
IRPS
Andrew Kim, Ernest Y. Wu, Baozhen Li, Barry P. Linder
2018 — conf
Electromigration characteristics of power grid like structures.
IRPS
Baozhen Li, Andrew Kim, Paul McLaughlin, Barry P. Linder, Cathryn Christiansen
2018 — conf
Estimating transistor channel temperature using time-resolved and time-integrated NIR emission.
IRPS
Franco Stellari, Alan J. Weger, Keith A. Jenkins, Giuseppe La Rosa, Barry P. Linder, Peilin Song
2018 — conf
Transient self-heating modeling and simulations of back-end-of-line interconnects.
IRPS
Andrew Kim, Baozhen Li, Barry P. Linder
2015 — conf
A critical analysis of sampling-based reconstruction methodology for dielectric breakdown systems (BEOL/MOL/FEOL).
IRPS
Ernest Y. Wu, James H. Stathis, Baozhen Li, Barry P. Linder, Kai Zhao, Griselda Bonilla
2015 — conf
Analyzing path delays for accelerated testing of logic chips.
IRPS
Emily Ray, Barry P. Linder, Raphael Robertazzi, Kevin Stawiasz, Alan J. Weger, Emmanuel Yashchin, James H. Stathis, Peilin Song
2015 — conf
Self-heating characterization of FinFET SOI devices using 2D time resolved emission measurements.
IRPS
Franco Stellari, Keith A. Jenkins, Alan J. Weger, Barry P. Linder, Peilin Song
2013 — conf
Improving and optimizing reliability in future technologies with high-κ dielectrics.
VLSI-DAT
Barry P. Linder, Eduard Cartier, S. Krishnan, Ernest Y. Wu
2003 J jnl
Circuit implications of gate oxide breakdown.
Microelectron. Reliab.
James H. Stathis, Rosana Rodríguez, Barry P. Linder
2003 J jnl
Influence and model of gate oxide breakdown on CMOS inverters.
Microelectron. Reliab.
Rosana Rodríguez, James H. Stathis, Barry P. Linder, Rajiv V. Joshi, Ching-Te Chuang
2003 J jnl
Reliability of ultra-thin oxides in CMOS circuits.
Microelectron. Reliab.
James H. Stathis, Barry P. Linder, Rosana Rodríguez, Salvatore Lombardo
2002 J jnl
Analysis of the effect of the gate oxide breakdown on SRAM stability.
Microelectron. Reliab.
Rosana Rodríguez, James H. Stathis, Barry P. Linder, Steven P. Kowalczyk, Ching-Te Chuang, Rajiv V. Joshi, Gregory A. Northrop, Kerry Bernstein, Azeez J. Bhavnagarwala, Salvatore Lombardo
2002 J jnl
Dependence of Post-Breakdown Conduction on Gate Oxide Thickness.
Microelectron. Reliab.
Salvatore Lombardo, James H. Stathis, Barry P. Linder