Barry J. O'Sullivan

25 papers Journal 3Unranked 22

Year	Rank	Type	Title / Venue / Authors
2025	—	`conf`	Evolution of GaN HEMT Small-Signal Parameters During Semi-on State for RF/MM-Wave Applications. IRPS Aarti Rathi, Barry J. O'Sullivan, Rana ElKashlan, B. Kazemi Esfeh, Arturo Sibaja Hernandez, Hao Yu, AliReza Alian, Sachin Yadav, Uthayasankaran Peralagu, Adrian Vaisman Chasin, Bertrand Parvais, Nadine Collaert
2025	—	`conf`	Gate Stack Development for Next Gen High Voltage Periphery DRAM Devices. IRPS J. P. Bastos, Jacopo Franco, Barry J. O'Sullivan, Yusuke Higashi, Adrian Chasin, J. Ganguly, Hiroaki Arimura, Alessio Spessot, M.-S. Kim, N. Horiguchi
2025	—	`conf`	Lifetime Model for Enabling Reliable InGaAs/GaAs Nano-Ridge Lasers Monolithically Integrated on 300 mm Silicon. OFC Ping-Yi Hsieh, Artemisia Tsiara, Barry J. O'Sullivan, Sara El Akel, Huseyin Sar, Debi Prasad Panda, Peter Swekis, Didit Yudistira, Bernardette Kunert, Joris Van Campenhout, Ingrid De Wolf
2025	—	`conf`	Perspectives on GaN MISHEMT Power Amplifier Versus Positive Gate Bias Instability. IRPS Hao Yu, Rana ElKashlan, Meng-Che Tsai, Yi Yang, Mamoun Guenach, Ying-Chun Kuo, Sachin Yadav, Barry J. O'Sullivan, Aarti Rathi, Amratansh Gupta, Dongping Xiao, Claude Desset, AliReza Alian, Uthayasankaran Peralagu, Valeri Afans'ev, Tian-Li Wu, Bertrand Parvais, Nadine Collaert
2025	—	`conf`	Toward Understanding Stability of RF MIS-HEMTs Under ON/SEMI-ON/OFF-State Pulses with Scaling in-situ SiN Thicknesses. IRPS Yi Yang, Hao Yu, Meng-Che Tsai, Wei-Tung Lin, Ying-Chun Kuo, Barry J. O'Sullivan, Aarti Rathi, Amratansh Gupta, Sachin Yadav, AliReza Alian, Uthayasankaran Peralagu, Bertrand Parvais, Nadine Collaert, Tian-Li Wu
2024	—	`conf`	DC Reliability Study of $\text{high}-\kappa$ GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers. IRPS Barry J. O'Sullivan, AliReza Alian, Arturo Sibaja Hernandez, Jacopo Franco, Sachin Yadav, Hao Yu, Aarti Rathi, Uthayasankaran Peralagu, Adrian Vaisman Chasin, Bertrand Parvais, Nadine Collaert
2024	—	`conf`	Modeling Dark Current Degradation of Monolithic InGaAs/GaAs-On-Si Nano-Ridge Photodetectors. IRPS Ping-Yi Hsieh, Ameni Ben Driss, Artemisia Tsiara, Barry J. O'Sullivan, Didit Yudistira, Bernardette Kunert, Joris Van Campenhout, Ingrid De Wolf
2024	—	`conf`	Side and Corner Region Non-Uniformities in Grown SiO2 and Their Implications on Current, Capacitance and Breakdown Characteristics. IRPS J. P. Bastos, Barry J. O'Sullivan, Yusuke Higashi, Adrian Vaisman Chasin, Jacopo Franco, Hiroaki Arimura, J. Ganguly, Elena Capogreco, Alessio Spessot, N. Horiguchi
2022	—	`conf`	Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery. IRPS J. P. Bastos, Barry J. O'Sullivan, Jacopo Franco, Stanislav Tyaginov, Brecht Truijen, Adrian Vaisman Chasin, Robin Degraeve, Ben Kaczer, Romain Ritzenthaler, Elena Capogreco, E. Dentoni Litta, Alessio Spessot, Yusuke Higashi, Y. Yoon, V. Machkaoutsan, Pierre Fazan, N. Horiguchi
2022	—	`conf`	Modelling ultra-fast threshold voltage instabilities in Hf-based ferroelectrics. IRPS Barry J. O'Sullivan, Brecht Truijen, Vamsi Putcha, Alexander Grill, Adrian Vaisman Chasin, Geert Van den Bosch, Ben Kaczer, Md Nur K. Alam, Jan Van Houdt
2022	—	`conf`	Trap-polarization interaction during low-field trap characterization on hafnia-based ferroelectric gatestacks. IRPS Brecht Truijen, Barry J. O'Sullivan, Md. Nurul Alam, Dieter Claes, Mischa Thesberg, Philippe Roussel, Adrian Vaisman Chasin, Geert Van den Bosch, Ben Kaczer, Jan Van Houdt
2022	—	`conf`	Wafer-Level Aging of InGaAs/GaAs Nano-Ridge p-i-n Diodes Monolithically Integrated on Silicon. IRPS Ping-Yi Hsieh, Artemisia Tsiara, Barry J. O'Sullivan, Didit Yudistira, Marina Baryshnikova, Guido Groeseneken, Bernardette Kunert, Marianna Pantouvaki, Joris Van Campenhout, Ingrid De Wolf
2021	—	`conf`	CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States. IRPS Tibor Grasser, Barry J. O'Sullivan, Ben Kaczer, Jacopo Franco, Bernhard Stampfer, Michael Waltl
2021	—	`conf`	Edge-induced reliability & performance degradation in STT-MRAM: an etch engineering solution. IRPS Simon Van Beek, Siddharth Rao, Shreya Kundu, Woojin Kim, Barry J. O'Sullivan, Stefan Cosemans, Farrukh Yasin, Robert Carpenter, Sebastien Couet, Shamin H. Sharifi, Nico Jossart, Davide Crotti, Gouri Sankar Kar
2021	—	`conf`	STT-MRAM array performance improvement through optimization of Ion Beam Etch and MTJ for Last-Level Cache application. IMW Sidharth Rao, Woojin Kim, Simon Van Beek, Shreya Kundu, Manu Perumkunnil, Stefan Cosemans, Farrukh Yasin, Sebastien Couet, Robert Carpenter, Barry J. O'Sullivan, Shamin H. Sharifi, N. Jossart, Laurent Souriau, Ludovic Goux, Dimitri Crotti, Gouri Sankar Kar
2020	—	`conf`	The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release. IRPS Tibor Grasser, Ben Kaczer, Barry J. O'Sullivan, Gerhard Rzepa, Bernhard Stampfer, Michael Waltl
2020	—	`conf`	Understanding and empirical fitting the breakdown of MgO in end-of-line annealed MTJs. IRPS Simon Van Beek, Barry J. O'Sullivan, Sebastien Couet, Davide Crotti, Dimitri Linten, Gouri Sankar Kar
2019	—	`conf`	Accelerated Device Degradation of High-Speed Ge Waveguide Photodetectors. IRPS Alicja Lesniewska, S. A. Srinivasan, Joris Van Campenhout, Barry J. O'Sullivan, Kris Croes
2019	—	`conf`	Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices. IRPS Barry J. O'Sullivan, Romain Ritzenthaler, Gerhard Rzepa, Z. Wu, E. Dentoni Litta, O. Richard, T. Conard, V. Machkaoutsan, Pierre Fazan, C. Kim, Jacopo Franco, Ben Kaczer, Tibor Grasser, Alessio Spessot, Dimitri Linten, N. Horiguchi
2018	—	`conf`	Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors. IRPS Tibor Grasser, Bernhard Stampfer, Michael Waltl, Gerhard Rzepa, Karl Rupp, Franz Schanovsky, Gregor Pobegen, Katja Puschkarsky, Hans Reisinger, Barry J. O'Sullivan, Ben Kaczer
2018	J	`jnl`	Comphy - A compact-physics framework for unified modeling of BTI. Microelectron. Reliab. Gerhard Rzepa, Jacopo Franco, Barry J. O'Sullivan, A. Subirats, Marko Simicic, Geert Hellings, Pieter Weckx, Markus Jech, Theresia Knobloch, Michael Waltl, Philippe Roussel, Dimitri Linten, Ben Kaczer, Tibor Grasser
2018	—	`conf`	Extended RVS characterisation of STT-MRAM devices: Enabling detection of AP/P switching and breakdown. IRPS Barry J. O'Sullivan, Simon Van Beek, Philippe J. Roussel, Sidharth Rao, Wonsub Kim, Sebastien Couet, Johan Swerts, Farrukh Yasin, Dimitri Crotti, Dimitri Linten, Gouri Sankar Kar
2018	—	`conf`	Study of breakdown in STT-MRAM using ramped voltage stress and all-in-one maximum likelihood fit. ESSDERC Simon Van Beek, Philippe Roussel, Barry J. O'Sullivan, Robin Degraeve, Stefan Cosemans, Dimitri Linten, Gouri Sankar Kar
2005	J	`jnl`	Electrical characterization of HfO Microelectron. Reliab. J. M. Decams, H. Guillon, Carmen Jiménez, M. Audier, J. P. Sénateur, C. Dubourdieu, O. Cadix, Barry J. O'Sullivan, Mircea Modreanu, Paul K. Hurley
2001	J	`jnl`	Flat band voltage shift and oxide properties after rapid thermal annealing. Microelectron. Reliab. Barry J. O'Sullivan, Paul K. Hurley, F. N. Cubaynes, P. A. Stolk, F. P. Widdershoven