B. Jayant Baliga

13 papers C 1Journal 6Unranked 6
YearRankTypeTitle / Venue / Authors
2023 J jnl
Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode Based Reverse Voltage Blocking Switch for Medium Voltage Current Source Inverter Application.
IEEE Access
Sneha Narasimhan, Ajit Kanale, Subhashish Bhattacharya, B. Jayant Baliga
2021 J jnl
Theoretical Optimization of the Si GSS-DMM Device in the BaSIC Topology for SiC Power MOSFET Short-Circuit Capability Improvement.
IEEE Access
Ajit Kanale, B. Jayant Baliga
2020 — conf
2.3 kV 4H-SiC Accumulation-channel JBSFETs: Experimental Comparison of Linear, Hexagonal and Octagonal Cell Topologies.
DRC
Aditi Agarwal, Kijeong Han, B. Jayant Baliga
2019 C conf
Comparison of Current Suppression Methods to Enhance Short Circuit Capability of 1.2 kV SiC Power MOSFETs: A New Approach using a Series-connected, Gate-Source-Shorted Si Depletion-Mode MOSFET vs Reduced Gate Bias Operation.
IECON
Ajit Kanale, B. Jayant Baliga
2019 — conf
Impact of Channel Length on Characteristics of 600V 4H-SiC Inversion-channel Planar MOSFETs.
ESSDERC
Aditi Agarwal, Kijeong Han, B. Jayant Baliga
2019 — conf
Impact of Gate Oxide Thickness on Electrical Characteristics of 1200 V 4H-SiC Planar-Gate Power MOSFETs.
DRC
Aditi Agarwal, Kijeong Han, B. Jayant Baliga
2019 — conf
Stability of 4H-SiC JBS Diodes Under Repetitive Avalanche Stress.
IRPS
Ajit Kanale, Kijeong Han, B. Jayant Baliga, Subhashish Bhattacharya
2018 — conf
Silicon Carbide Power Devices: A 35 Year Journey from Conception to Commercialization.
DRC
B. Jayant Baliga
2017 J jnl
On Developing One-Chip Integration of 1.2 kV SiC MOSFET and JBS Diode (JBSFET).
IEEE Trans. Ind. Electron.
WoongJe Sung, B. Jayant Baliga
2016 — conf
SiC power devices: From conception to social impact.
ESSDERC
B. Jayant Baliga
2001 J jnl
The future of power semiconductor device technology.
Proc. IEEE
B. Jayant Baliga
1994 J jnl
Power semiconductor devices for variable-frequency drives.
Proc. IEEE
B. Jayant Baliga
1988 J jnl
Evolution of MOS-bipolar power semiconductor technology.
Proc. IEEE
B. Jayant Baliga