Arnaud Régnier

19 papers C 2Journal 5Unranked 12

Year	Rank	Type	Title / Venue / Authors
2025	—	`conf`	Polysilicon PIN diode characterization and scaling in low-cost 40nm technology for IoT applications. ICECS Wiame El Khayyari, Noemie Couzi, Jérémy Postel-Pellerin, Hassen Aziza, Abderrezak Marzaki, François Courbin, Alexandre Malherbe, Arnaud Régnier, Stephan Niel
2023	—	`conf`	40nm SONOS Embedded Select in Trench Memory. ESSDERC Radouane Habhab, Vincenzo Della Marca, Pascal Masson, Nadia Miridi, Clement Pribat, Simon Jeannot, Thibault Kempf, Marc Mantelli, Philippe Lorenzini, Jean-Marc Voisin, Arnaud Régnier, Stephan Niel, Francesco La Rosa
2023	—	`conf`	Notched gate MOSFET for capacitance reduction in RF SOI technology. DTTIS Lucas Antunes Tambara, Pascal Masson, Julien Amouroux, Stéphane Monfray, Julien Dura, Frederic Gianesello, Julien Babic, Romain Debroucke, Loic Welter, Siddhartha Dhar, Bernadette Gros, Clement Charbuillet, Franck Julien, Guillaume Bertrand, Arnaud Régnier, Alain Fleury
2022	—	`conf`	A Schmitt trigger to benchmark the performance of a new zero-cost transistor. ICECS 2022 Paul Devoge, Hassen Aziza, Philippe Lorenzini, Pascal Masson, Alexandre Malherbe, Franck Julien, Abderrezak Marzaki, Arnaud Régnier, Stephan Niel
2022	C	`conf`	Digital-to-analog converters to benchmark the matching performance of a new zero-cost transistor. ISCAS Paul Devoge, Hassen Aziza, Philippe Lorenzini, Alexandre Malherbe, Franck Julien, Abderrezak Marzaki, Arnaud Régnier, Stephan Niel
2021	—	`conf`	Benchmarking and optimization of trench-based multi-gate transistors in a 40 nm non-volatile memory technology. DTIS Romeric Gay, Vincenzo Della Marca, Hassen Aziza, Arnaud Régnier, Stephan Niel, Abderrezak Marzaki
2021	—	`conf`	Circuit-level evaluation of a new zero-cost transistor in an embedded non-volatile memory CMOS technology. DTIS Paul Devoge, Hassen Aziza, Philippe Lorenzini, Franck Julien, Abderrezak Marzaki, Alexandre Malherbe, Marc Mantelli, Thomas Sardin, Sébastien Haendler, Arnaud Régnier, Stephan Niel
2021	—	`conf`	Hot Electron Source Side Injection Comprehension in 40nm eSTM™. IMW Franck Melul, Thibault Kempf, Vincenzo Della Marca, Marc Bocquet, Madjid Akbal, Frederique Trenteseaux, Marc Mantelli, Arnaud Régnier, Stephan Niel, Francesco La Rosa
2021	—	`conf`	Simulation of state of the art EEPROM programming window closure during endurance degradation. DTIS Franck Matteo, Roberto Simola, Franck Melul, Karine Coulié, Jérémy Postel-Pellerin, Arnaud Régnier
2020	—	`conf`	AC stress reliability study of a new high voltage transistor for logic memory circuits. IRPS Jordan Locati, Vincenzo Della Marca, Christian Rivero, Arnaud Régnier, Stephan Niel, Karine Coulié
2018	J	`jnl`	Quantitative correlation between Flash and equivalent transistor for endurance electrical parameters extraction. Microelectron. Reliab. Vincenzo Della Marca, Jérémy Postel-Pellerin, Thibault Kempf, Arnaud Régnier, Philippe Chiquet, Marc Bocquet
2018	—	`conf`	Threshold voltage bitmap analysis methodology: Application to a 512kB 40nm Flash memory test chip. IRPS Thibault Kempf, Vincenzo Della Marca, L. Baron, F. Maugain, Francesco La Rosa, Stephan Niel, Arnaud Régnier, Jean-Michel Portal, Pascal Masson
2015	—	`conf`	Layout optimizations to decrease internal power and area in digital CMOS standard cells. MIPRO Jordan Innocenti, Franck Julien, Jean-Michel Portal, Laurent Lopez, Q. Hubert, Pascal Masson, Jacques Sonzogni, Stephan Niel, Arnaud Régnier
2014	—	`conf`	Dynamic power reduction through process and design optimizations on CMOS 80 nm embedded non-volatile memories technology. MWSCAS Jordan Innocenti, Loic Welter, Franck Julien, Laurent Lopez, Jacques Sonzogni, Stephan Niel, Arnaud Régnier, Emmanuel Paire, Karen Labory, Eric Denis, Jean-Michel Portal, Pascal Masson
2012	J	`jnl`	Effects of 1064 nm laser on MOS capacitor. Microelectron. Reliab. R. Llido, Pascal Masson, Arnaud Régnier, Vincent Goubier, Gérald Haller, Vincent Pouget, Dean Lewis
2012	J	`jnl`	Effects of Lightly Doped Drain and Channel Doping Variations on Flash Memory Performances and Reliability. J. Low Power Electron. Guillaume Just, Vincenzo Della Marca, Arnaud Régnier, Jean-Luc Ogier, Jérémy Postel-Pellerin, Jean-Michel Portal, Pascal Masson
2010	J	`jnl`	Leakage paths identification in NVM using biased data retention. Microelectron. Reliab. Jérémy Postel-Pellerin, Romain Laffont, Gilles Micolau, Frédéric Lalande, Arnaud Régnier, Bernard Bouteille
2008	J	`jnl`	Dynamic stress method for accurate NVM oxide robustness evaluation for automotive applications. Microelectron. Reliab. D. Pic, Arnaud Régnier, V. Pean, Jean-Luc Ogier, Didier Goguenheim
2006	C	`conf`	MM11 based flash memory cell model including characterization procedure. ISCAS B. Saillet, Arnaud Régnier, Jean-Michel Portal, B. Delsuc, Romain Laffont, Pascal Masson, Rachid Bouchakour