Arnaud Curutchet

13 papers Journal 10Unranked 3
YearRankTypeTitle / Venue / Authors
2018 — conf
Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN high electron mobility transistors.
IRPS
Kalparupa Mukherjee, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat
2017 — conf
A two-step de-embedding method valid up to 110 GHz.
ICM
J. Bazzi, H. Kassem, Arnaud Curutchet, Franck Pourchon, N. Derrier, Didier Céli, Thomas Zimmer
2017 J jnl
TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices.
Microelectron. Reliab.
Kalparupa Mukherjee, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat
2016 J jnl
Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress.
Microelectron. Reliab.
H. Lakhdhar, Nathalie Labat, Arnaud Curutchet, Nicolas Defrance, Marie Lesecq, Jean-Claude de Jaeger, Nathalie Malbert
2015 J jnl
Correlation between forward-reverse low-frequency noise and atypical I-V signatures in 980 nm high-power laser diodes.
Microelectron. Reliab.
Pamela Del Vecchio, Arnaud Curutchet, Yannick Deshayes, M. Bettiati, F. Laruelle, Nathalie Labat, Laurent Béchou
2015 J jnl
Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs.
Microelectron. Reliab.
M. Rzin, Nathalie Labat, Nathalie Malbert, Arnaud Curutchet, Laurent Brunel, Benoit Lambert
2013 J jnl
Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress.
Microelectron. Reliab.
Laurent Brunel, Benoit Lambert, P. Mezenge, J. Bataille, D. Floriot, Jan Grünenpütt, Hervé Blanck, D. Carisetti, Y. Gourdel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat
2013 J jnl
Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements.
Microelectron. Reliab.
S. Karboyan, Jean-Guy Tartarin, M. Rzin, Laurent Brunel, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, D. Carisetti, Benoit Lambert, M. Mermoux, E. Romain-Latu, F. Thomas, C. Bouexière, C. Moreau
2012 J jnl
Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test.
Microelectron. Reliab.
Benoit Lambert, Nathalie Labat, Dominique Carisetti, Serge Karboyan, Jean-Guy Tartarin, Jim Thorpe, Laurent Brunel, Arnaud Curutchet, Nathalie Malbert, Eddy Latu-Romain, Michel Mermoux
2012 — conf
Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements.
ESSDERC
Laurent Brunel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat, Benoit Lambert
2009 J jnl
Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs.
Microelectron. Reliab.
Nathalie Malbert, Nathalie Labat, Arnaud Curutchet, C. Sury, V. Hoel, J.-C. de Jaeger, Nicolas Defrance, Y. Douvry, Christian Dua, Mourad Oualli, C. Bru-Chevallier, Jean-Marie Bluet, W. Chikhaoui
2006 J jnl
AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements.
Microelectron. Reliab.
A. Sozza, Arnaud Curutchet, Christian Dua, Nathalie Malbert, Nathalie Labat, André Touboul
2003 J jnl
Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates.
Microelectron. Reliab.
Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, André Touboul, Christophe Gaquière, A. Minko, Michael J. Uren