Antonio Gnudi

54 papers A 1B 1C 3Journal 23Unranked 26
YearRankTypeTitle / Venue / Authors
2025 C conf
iSPAZ: An Improved Switched-Capacitor Ping-Pong Voltage Generator with Auto-Zero for Ultra-Low-Power Internet of Everything Systems.
ISCAS
Matteo D'Addato, Alessia Maria Elgani, Eleonora Franchi Scarselli, Antonio Gnudi
2024 J jnl
A Temperature-Robust Envelope Detector Receiving OOK-Modulated Signals for Low-Power Applications.
Sensors
Alessia Maria Elgani, Matteo D'Addato, Luca Perilli, Eleonora Franchi Scarselli, Antonio Gnudi, Roberto Canegallo, Giulio Ricotti
2023 C conf
A Threshold Voltage Generator Circuit with Automatic Refresh and Dynamic Updating for Ultra-Low-Power Continuous-Time Comparators.
ISCAS
Matteo D'Addato, Luca Perilli, Alessia Maria Elgani, Eleonora Franchi Scarselli, Antonio Gnudi, Roberto Canegallo, Giulio Ricotti
2022 — conf
A 54.8-nW, 256-bit Codeword Temperature-Robust Wake-Up Receiver minimizing False Wake-Ups for Ultra-Low-Power IoT Systems.
ICECS 2022
Matteo D'Addato, Alessia Maria Elgani, Luca Perilli, Eleonora Franchi Scarselli, Antonio Gnudi, Roberto Canegallo, Giulio Ricotti
2022 — conf
An embedded PCM Peripheral Unit adding Analog MAC In-Memory Computing Feature addressing Non-linearity and Time Drift Compensation.
ESSCIRC
Alessio Antolini, Andrea Lico, Eleonora Franchi Scarselli, Antonio Gnudi, Luca Perilli, Mattia Luigi Torres, Marcella Carissimi, Marco Pasotti, Roberto Canegallo
2022 J jnl
Phase Change Memories in Smart Sensing Solutions for Structural Health Monitoring.
J. Comput. Civ. Eng.
Said Quqa, Alessio Antolini, Eleonora Franchi Scarselli, Antonio Gnudi, Andrea Lico, Marcella Carissimi, Marco Pasotti, Roberto Canegallo, Luca Landi, Pier Paolo Diotallevi
2021 C conf
Compressed Sensing by Phase Change Memories: Coping with Encoder non-Linearities.
ISCAS
Carmine Paolino, Alessio Antolini, Fabio Pareschi, Mauro Mangia, Riccardo Rovatti, Eleonora Franchi Scarselli, Antonio Gnudi, Gianluca Setti, Roberto Canegallo, Marcella Carissimi, Marco Pasotti
2020 J jnl
A Clockless Temperature-Compensated Nanowatt Analog Front-End for Wake-Up Radios Based on a Band-Pass Envelope Detector.
IEEE Trans. Circuits Syst. I Regul. Pap.
Alessia Maria Elgani, Francesco Renzini, Luca Perilli, Eleonora Franchi Scarselli, Antonio Gnudi, Roberto Canegallo, Giulio Ricotti
2020 B conf
Nanowatt Clock and Data Recovery for Ultra-Low Power Wake-Up Based Receivers.
EWSN
Matteo D'Addato, Alessio Antolini, Francesco Renzini, Alessia Maria Elgani, Luca Perilli, Eleonora Franchi Scarselli, Antonio Gnudi, Michele Magno, Roberto Canegallo
2019 — conf
On the electron mobility of strained InGaAs channel MOSFETs.
ESSDERC
Stefania Carapezzi, Susanna Reggiani, Elena Gnani, Antonio Gnudi
2019 — conf
TCAD predictions of hot-electron injection in p-type LDMOS transistors.
ESSDERC
Federico Giuliano, Riccardo Depetro, Giuseppe Croce, Andrea Natale Tallarico, Susanna Reggiani, Antonio Gnudi, Enrico Sangiorgi, Claudio Fiegna, Mattia Rossetti, Antonio Molfese, Stefano Manzini
2018 — conf
3D TCAD modeling of NO2CNT FET sensors.
ESSDERC
Stefania Carapezzi, Sebastian Eberle, Susanna Reggiani, Elena Gnani, Cosmin Roman, Christofer Hierold, Antonio Gnudi
2018 J jnl
Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture.
Microelectron. Reliab.
Davide Cornigli, Susanna Reggiani, Antonio Gnudi, Elena Gnani, Giorgio Baccarani, Davide Fabiani, Dhanoop Varghese, Enis Tuncer, S. Krishnan, Luu Nguyen
2018 — conf
Nanowatt Wake-Up Radios: Discrete-Components and Integrated Architectures.
ICECS
Alessia Maria Elgani, Michele Magno, Francesco Renzini, Luca Perilli, Eleonora Franchi Scarselli, Antonio Gnudi, Roberto Canegallo, Giulio Ricotti, Luca Benini
2018 J jnl
TCAD investigation on hot-electron injection in new-generation technologies.
Microelectron. Reliab.
Susanna Reggiani, Mattia Rossetti, Antonio Gnudi, Andrea Natale Tallarico, Antonio Molfese, Stefano Manzini, Riccardo Depetro, Giuseppe Croce, Enrico Sangiorgi, Claudio Fiegna
2018 J jnl
TCAD study of DLC coatings for large-area high-power diodes.
Microelectron. Reliab.
Susanna Reggiani, Luigi Balestra, Antonio Gnudi, Elena Gnani, Giorgio Baccarani, J. Dobrzynska, J. Vobecký, C. Tosi
2016 — conf
A full-quantum simulation study of InGaAs NW MOSFETs including interface traps.
ESSDERC
Michele Visciarelli, Antonio Gnudi, Elena Gnani, Susanna Reggiani
2016 — conf
Performance study of strained III-V materials for ultra-thin body transistor applications.
ESSDERC
Martin Rau, Troels Markussen, Enrico Caruso, David Esseni, Elena Gnani, Antonio Gnudi, Petr A. Khomyakov, Mathieu Luisier, Patrik Osgnach, Pierpaolo Palestri, Susanna Reggiani, Andreas Schenk, Luca Selmi, Kurt Stokbro
2016 — conf
TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections.
ESSDERC
Stefania Carapezzi, Enrico Caruso, Antonio Gnudi, Susanna Reggiani, Elena Gnani
2015 — conf
Theoretical analyses and modeling for nanoelectronics.
ESSCIRC
Giorgio Baccarani, Emanuele Baravelli, Elena Gnani, Antonio Gnudi, Susanna Reggiani
2015 — conf
Theoretical analyses and modeling for nanoelectronics.
ESSDERC
Giorgio Baccarani, Emanuele Baravelli, Elena Gnani, Antonio Gnudi, Susanna Reggiani
2014 — conf
A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs.
ESSDERC
Federica Villani, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani
2014 — conf
Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation.
ESSDERC
Valerio Di Lecce, Roberto Grassi, Antonio Gnudi, Elena Gnani, Susanna Reggiani, Giorgio Baccarani
2014 — conf
TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions.
ESSDERC
Federico Monti, Susanna Reggiani, Gaetano Barone, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, Stefano Poli, Ming-Yeh Chuang, Weidong Tian, Dhanoop Varghese, Rick Wise
2014 — conf
TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime.
ESSDERC
Ilaria Imperiale, Susanna Reggiani, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, Luu Nguyen, Marie Denison
2013 — conf
Boosting InAs TFET on-current above 1 mA/μm with no leakage penalty.
ESSDERC
Giovanni Betti Beneventi, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani
2013 — conf
Complementary n- and p-type TFETs on the same InAs/Al0.05Ga0.95Sb platform.
ESSDERC
Emanuele Baravelli, Elena Gnani, Roberto Grassi, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani
2013 — conf
DC and small-signal numerical simulation of graphene base transistor for terahertz operation.
ESSDERC
Valerio Di Lecce, Roberto Grassi, Antonio Gnudi, Elena Gnani, Susanna Reggiani, Giorgio Baccarani
2013 J jnl
Deterministic solution of the 1D Boltzmann transport equation: Application to the study of current transport in nanowire FETs.
Microelectron. J.
Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani
2013 — conf
Gate stack optimization to minimize power consumption in super-lattice fets.
ESSDERC
Pasquale Maiorano, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani
2013 — conf
Modeling and characterization of hot-carrier stress degradation in power MOSFETs (invited).
ESSDERC
Susanna Reggiani, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, Stefano Poli, Rick Wise, Ming-Yeh Chuang, Weidong Tian, Marie Denison
2012 — conf
Drain-conductance optimization in nanowire TFETs.
ESSDERC
Elena Gnani, Susanna Reggiani, Antonio Gnudi, Giorgio Baccarani
2012 — conf
TCAD degradation modeling for LDMOS transistors.
ESSDERC
Susanna Reggiani, Gaetano Barone, Elena Gnani, Antonio Gnudi, Stefano Poli, Ming-Yeh Chuang, Weidong Tian, Rick Wise
2011 J jnl
Automatic Compensation of the Voltage Attenuation in 3-D Interconnection Based on Capacitive Coupling.
IEEE J. Solid State Circuits
Eleonora Franchi Scarselli, Antonio Gnudi, Federico Natali, Mauro Scandiuzzo, Roberto Canegallo, Roberto Guerrieri
2011 J jnl
On the simulation of fast settling charge pump PLLs up to fourth order.
Int. J. Circuit Theory Appl.
Marco Guermandi, Eleonora Franchi, Antonio Gnudi
2010 J jnl
Quadrature VCOs based on direct second harmonic locking: Theoretical analysis and experimental validation.
Int. J. Circuit Theory Appl.
Paola Tortori, Davide Guermandi, Marco Guermandi, Eleonora Franchi, Antonio Gnudi
2009 — conf
3D capacitive transmission of analog signals with automatic compensation of the voltage attenuation.
ESSCIRC
Eleonora Franchi, Federico Natali, Antonio Gnudi, Roberto Guerrieri, Massimiliano Innocenti, Luca Ciccarelli, Mauro Scandiuzzo, Roberto Canegallo
2009 A conf
A MEMS reconfigurable quad-band Class-E Power Amplifier for GSM standard.
DATE
Luca Larcher, Riccardo Brama, Marcello Ganzerli, Jacopo Iannacci, Marco Bedani, Antonio Gnudi
2008 J jnl
A Fully Parameterized Fem Model for Electromagnetic Optimization of an RF Mems Wafer Level Package
CoRR
Jacopo Iannacci, Jason Tian, Roberto Gaddi, Antonio Gnudi, Marian Bartek
2008 J jnl
A Reconfigurable Impedance Matching Network Employing RF-MEMS Switches
CoRR
Marco Bedani, F. Carozza, Roberto Gaddi, Antonio Gnudi, Benno Margesin, Flavio Giacomozzi
2007 J jnl
Parasitic Effects Reduction for Wafer-Level Packaging of RF-Mems
CoRR
Jacopo Iannacci, Jason Tian, Saoer Sinaga, Roberto Gaddi, Antonio Gnudi, Marian Bartek
2007 J jnl
RF
IEEE Trans. Circuits Syst. II Express Briefs
Stefano Vitali, Eleonora Franchi, Antonio Gnudi
2005 J jnl
A 0.83-2.5-GHz continuously tunable quadrature VCO.
IEEE J. Solid State Circuits
Davide Guermandi, Paola Tortori, Eleonora Franchi, Antonio Gnudi
2005 — conf
A gain/phase mismatch calibration procedure for RF I/Q downconverters.
ISCAS (3)
Stefano Vitali, Eleonora Franchi, Antonio Gnudi
2004 — conf
A design flow for inductively degenerated LNAs.
ICECS
Davide Guermandi, Eleonora Franchi, Antonio Gnudi
2004 — conf
Quadrature VCO based on direct second harmonic locking.
ISCAS (1)
Paola Tortori, Davide Guermandi, Eleonora Franchi, Antonio Gnudi
1998 J jnl
Transient Analysis of Silicon Devices Using the Hydrodynamic Model.
VLSI Design
Luigi Colalongo, Marina Valdinoci, Antonio Gnudi, Massimo Rudan
1994 J jnl
Hydrodynamic simulation of semiconductor devices operating at low temperature.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Alberto Leone, Antonio Gnudi, Giorgio Baccarani
1993 J jnl
Modeling impact ionization in a BJT by means of spherical harmonics expansion of the Boltzmann transport equation.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Antonio Gnudi, Davide Ventura, Giorgio Baccarani
1992 J jnl
Numerical modeling of advanced semiconductor devices.
IBM J. Res. Dev.
Wai Lee, Steven E. Laux, Massimo V. Fischetti, Giorgio Baccarani, Antonio Gnudi, Johannes M. C. (Hans) Stork, Jack A. Mandelman, Emmanuel F. Crabbé, Matthew R. Wordeman, Farouk Odeh
1990 J jnl
Investigation of non-local transport phenomena in small semiconductor devices.
Eur. Trans. Telecommun.
Antonio Gnudi, Farouk Odeh, Massimo Rudan
1989 J jnl
Adaptive mesh generation preserving the quality of the initial grid.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Paolo Ciampolini, Alessandro Forghieri, Anna Pierantoni, Antonio Gnudi, Massimo Rudan, Giorgio Baccarani
1988 J jnl
A new discretization strategy of the semiconductor equations comprising momentum and energy balance.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Alessandro Forghieri, Roberto Guerrieri, Paolo Ciampolini, Antonio Gnudi, Massimo Rudan, Giorgio Baccarani
1987 J jnl
Sensitivity Analysis for Device Design.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Antonio Gnudi, Paolo Ciampolini, Roberto Guerrieri, Massimo Rudan, Giorgio Baccarani