Antonio Cerdeira

27 papers Journal 22Unranked 5
YearRankTypeTitle / Venue / Authors
2016 J jnl
Drain current model for short-channel triple gate junctionless nanowire transistors.
Microelectron. Reliab.
Bruna Cardoso Paz, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Olivier Faynot, F. Avila-Herrera, Antonio Cerdeira, Marcelo Antonio Pavanello
2016 — conf
Modeling the variation of threshold voltage, mobility factor and saturation coefficient in amorphous Indium-Gallium-Zinc Oxide thin film transistors.
CCE
Y. Hernandez-Barrios, F. Avila-Herrera, Magali Estrada, Antonio Cerdeira, Oana Moldovan, Benjamín Iñíguez, Rodrigo Picos
2016 J jnl
On the series resistance in staggered amorphous thin film transistors.
Microelectron. Reliab.
Antonio Cerdeira, Magali Estrada, Lluís F. Marsal, Josep Pallarès, Benjamín Iñíguez
2016 J jnl
Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors.
Microelectron. Reliab.
Magali Estrada, M. Rivas, Ivan Garduño, F. Avila-Herrera, Antonio Cerdeira, Marcelo Antonio Pavanello, Israel Mejia, M. A. Quevedo-Lopez
2015 J jnl
DC self-heating effects modelling in SOI and bulk FinFETs.
Microelectron. J.
Benito González, Juan Bautista Roldán, Benjamín Iñíguez, Antonio Lázaro, Antonio Cerdeira
2014 J jnl
Characterization of MIS structures and PTFTs using TiOx deposited by spin-coating.
Microelectron. Reliab.
C. Meneses, José G. Sánchez, Magali Estrada, Antonio Cerdeira, Josep Pallarès, Benjamín Iñíguez, Lluís F. Marsal
2014 — conf
Harmonic distortion analysis implementation for the determination of distortion in analog circuits.
CCE
Esteban Contreras, Antonio Cerdeira, Oscar García-Serrano
2013 J jnl
Implementation of nanoscale double-gate CMOS circuits using compact advanced transport models.
Microelectron. J.
Muthupandian Cheralathan, Esteban Contreras, Joaquín Alvarado, Antonio Cerdeira, Giuseppe Iannaccone, Enrico Sangiorgi, Benjamín Iñíguez
2012 J jnl
Effect of interface charge on the dc bias stress-induced deformation and shift of the transfer characteristic of amorphous oxide thin-film transistors.
Microelectron. Reliab.
Magali Estrada, Antonio Cerdeira, Benjamín Iñíguez
2012 J jnl
Modeling the behavior of amorphous oxide thin film transistors before and after bias stress.
Microelectron. Reliab.
Antonio Cerdeira, Magali Estrada, Blanca S. Soto-Cruz, Benjamín Iñíguez
2012 J jnl
Optimised design of an organic thin-film transistor amplifier using the gm/ID methodology.
IET Circuits Devices Syst.
Rodrigo Picos, Eugenio García-Moreno, Miquel Roca, Benjamín Iñíguez, Magali Estrada, Antonio Cerdeira
2012 J jnl
Organic thin-film transistor bias-dependent capacitance compact model in accumulation regime.
IET Circuits Devices Syst.
Alejandra Castro-Carranza, Magali Estrada, Jairo C. Nolasco, Antonio Cerdeira, Lluís F. Marsal, Benjamín Iñíguez, Josep Pallarès
2011 — conf
Gate leakage currents modeling for oxynitride gate dielectric in double gate MOSFETs.
CCE
Salvador Ivan Garduño, Antonio Cerdeira, Magali Estrada
2011 J jnl
Influence of P3HT: PCBM blend preparation on the active layer morphology and cell degradation.
Microelectron. Reliab.
V. S. Balderrama, Magali Estrada, Antonio Cerdeira, Blanca S. Soto-Cruz, Lluís F. Marsal, Josep Pallarès, Jairo C. Nolasco, Benjamín Iñíguez, Emilio Palomares, Josep Albero
2011 — conf
Modeling the subthreshold region of OTFTs.
CCE
Antonio Cerdeira, Magali Estrada, Benjamín Iñíguez, S. Soto
2010 — conf
3D structure simulation and proceeding to extract mobility parameters for FinFETs varying channel length.
CCE
J. E. Conde, Antonio Cerdeira
2008 J jnl
Conduction mechanisms of silicon oxide/titanium oxide MOS stack structures.
Microelectron. Reliab.
Julio C. Tinoco, Magali Estrada, Benjamín Iñíguez, Antonio Cerdeira
2008 J jnl
Harmonic distortion analysis of double gate graded-channel MOSFETs operating in saturation.
Microelectron. J.
Rodrigo Trevisoli Doria, Antonio Cerdeira, Jean-Pierre Raskin, Denis Flandre, Marcelo Antonio Pavanello
2007 J jnl
Harmonic distortion analysis using an improved charge sheet model for PD SOI MOSFETs.
Microelectron. J.
Joaquín Alvarado, Antonio Cerdeira, Valeria Kilchytska, Denis Flandre
2005 J jnl
Effect of localized traps on the anomalous behavior of the transconductance in nanocrystalline TFTs.
Microelectron. Reliab.
Magali Estrada, Antonio Cerdeira, Luis Reséndiz, Benjamín Iñíguez, Lluís F. Marsal, Josep Pallarès
2003 J jnl
Effects of impurity concentration, hydrogen plasma process and crystallization temperature on poly-crystalline films obtained from PECVD a-Si: H layers.
Microelectron. Reliab.
Rodolfo Zolá García-Lozano, Magali Estrada, Antonio Cerdeira
2003 J jnl
FD MOS SOI circuit to enhance the ratio of illuminated to dark current of a co-integrated a-Si: H photodiode.
Microelectron. Reliab.
Magali Estrada, A. Afzalian, Denis Flandre, Antonio Cerdeira, Héctor Báez-Medina, A. de Lucca
2002 J jnl
A review of recent MOSFET threshold voltage extraction methods.
Microelectron. Reliab.
Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Juin J. Liou, Antonio Cerdeira, Magali Estrada, Y. Yue
2002 J jnl
Influence of polysilicon-gate depletion on the subthreshold behavior of submicron MOSFETs.
Microelectron. Reliab.
Juin J. Liou, R. Shireen, Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Antonio Cerdeira, Xiaofang Gao, Xuecheng Zou, Ching-Sung Ho
2002 J jnl
Precise SPICE macromodel applied to high-voltage power MOSFET.
Microelectron. Reliab.
F. S. Lomeli, Antonio Cerdeira
2002 J jnl
Quasi-three-dimensional spice-based simulation of the transient behavior, including plasma spread, of thyristors and over-voltage protectors.
Microelectron. Reliab.
Rodolfo Quintero, Antonio Cerdeira, Adelmo Ortiz-Conde
2001 J jnl
Determination of trap cross-section in a-Si: H p-i-n diodes parameters using simulation and parameter extraction.
Microelectron. Reliab.
Magali Estrada, Antonio Cerdeira, Adelmo Ortiz-Conde, Francisco J. García-Sánchez