André Touboul

17 papers Journal 17
YearRankTypeTitle / Venue / Authors
2008 J jnl
Reliability investigations of 850 nm silicon photodiodes under proton irradiation for space applications.
Microelectron. Reliab.
M. L. Bourqui, Laurent Béchou, Olivier Gilard, Yannick Deshayes, Pamela Del Vecchio, L. S. How, F. Rosala, Yves Ousten, André Touboul
2007 J jnl
Characterization and analysis of trap-related effects in AlGaN-GaN HEMTs.
Microelectron. Reliab.
Mustapha Faqir, Giovanni Verzellesi, Fausto Fantini, Francesca Danesin, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni, Anna Cavallini, Antonio Castaldini, Nathalie Labat, André Touboul, Christian Dua
2007 J jnl
Editorial.
Microelectron. Reliab.
Nathalie Labat, André Touboul
2006 J jnl
AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements.
Microelectron. Reliab.
A. Sozza, Arnaud Curutchet, Christian Dua, Nathalie Malbert, Nathalie Labat, André Touboul
2006 J jnl
Application of various optical techniques for ESD defect localization.
Microelectron. Reliab.
Fabien Essely, Frédéric Darracq, Vincent Pouget, Mustapha Remmach, Felix Beaudoin, Nicolas Guitard, Marise Bafleur, Philippe Perdu, André Touboul, Dean Lewis
2005 J jnl
Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure.
Microelectron. Reliab.
Nicolas Guitard, Fabien Essely, David Trémouilles, Marise Bafleur, Nicolas Nolhier, Philippe Perdu, André Touboul, Vincent Pouget, Dean Lewis
2005 J jnl
Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions.
Microelectron. Reliab.
Naoufel Ismail, Nathalie Malbert, Nathalie Labat, André Touboul, Jean-Luc Muraro, F. Brasseau, D. Langrez
2004 J jnl
Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors.
Microelectron. Reliab.
Nathalie Labat, Nathalie Malbert, Cristell Maneux, André Touboul
2004 J jnl
On-wafer low frequency noise measurements of SiGe HBTs: Impact of technological improvements on 1/f noise.
Microelectron. Reliab.
Brice Grandchamp, Cristell Maneux, Nathalie Labat, André Touboul, Thomas Zimmer
2004 J jnl
Study of the ESD defects impact on ICs reliability.
Microelectron. Reliab.
Fabien Essely, Corinne Bestory, Nicolas Guitard, Marise Bafleur, A. Wislez, E. Doche, Philippe Perdu, André Touboul, Dean Lewis
2003 J jnl
1/f noise analysis of InP/InGaAs DHBTs submitted to bias and thermal stresses.
Microelectron. Reliab.
J. C. Martin, Cristell Maneux, Nathalie Labat, André Touboul, Muriel Riet, S. Blayac, M. Kahn, Jean Godin
2003 J jnl
Editorial.
Microelectron. Reliab.
Nathalie Labat, André Touboul
2003 J jnl
High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects.
Microelectron. Reliab.
Mohamed Belhaj, Cristell Maneux, Nathalie Labat, André Touboul, Philippe Bove
2003 J jnl
Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates.
Microelectron. Reliab.
Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, André Touboul, Christophe Gaquière, A. Minko, Michael J. Uren
2002 J jnl
Degradation mechanisms induced by thermal and bias stresses in InP HEMTs.
Microelectron. Reliab.
Nathalie Labat, Nathalie Malbert, Benoit Lambert, André Touboul, F. Garat, B. Proust
2001 J jnl
Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses.
Microelectron. Reliab.
Benoit Lambert, Nathalie Malbert, Nathalie Labat, Frédéric Verdier, André Touboul, P. Huguet, R. Bonnet, G. Pataut
2001 J jnl
Front Side and Backside OBIT Mappings applied to Single Event Transient Testing.
Microelectron. Reliab.
Dean Lewis, Vincent Pouget, Thomas Beauchêne, Hervé Lapuyade, Pascal Fouillat, André Touboul, Felix Beaudoin, Philippe Perdu