Andries J. Scholten

12 papers Journal 4Unranked 8
YearRankTypeTitle / Venue / Authors
2023 J jnl
Random Telegraph Noise in Analog CMOS Circuits.
IEEE Trans. Circuits Syst. I Regul. Pap.
Maurício Banaszeski da Silva, Gilson I. Wirth, Hans P. Tuinhout, Adrie Zegers-van Duijnhoven, Andries J. Scholten
2020 — conf
Modeling and characterization of HBT limits.
BCICTS
Andries J. Scholten
2018 — conf
SiGe HBT PA Design for 5G (28 GHz and Beyond) - Modeling and Design Challenges.
BCICTS
Mark P. van der Heijden, Andries J. Scholten
2014 — conf
Identifying failure mechanisms in LDMOS transistors by analytical stability analysis.
ESSDERC
Alessandro Ferrara, Peter G. Steeneken, Boni K. Boksteen, Anco Heringa, Andries J. Scholten, Jurriaan Schmitz, Raymond J. E. Hueting
2011 — conf
Wafer-specific centering of compact transistor model parameters for advanced technologies and models.
CICC
Bart A. De Vries, Andries J. Scholten, P. F. E. Rommers, M. Stoutjesdijk, Dirk B. M. Klaassen
2009 J jnl
The New CMC Standard Compact MOS Model PSP: Advantages for RF Applications.
IEEE J. Solid State Circuits
Andries J. Scholten, Geert D. J. Smit, Bart A. De Vries, Luuk F. Tiemeijer, Jeroen A. Croon, Dirk B. M. Klaassen, Ronald van Langevelde, Xin Li, Weimin Wu, Gennady Gildenblat
2007 — conf
PSP-SOI: A Surface Potential Based Compact Model of Partially Depleted SOI MOSFETs.
CICC
Weimin Wu, Xin Li, Gennady Gildenblat, Glen O. Workman, Surya Veeraraghavan, Colin C. McAndrew, Ronald van Langevelde, Geert D. J. Smit, Andries J. Scholten, Dirk B. M. Klaassen, Josef Watts
2006 — conf
Compact modeling of noise in CMOS.
CICC
Andries J. Scholten, Ronald van Langevelde, Luuk F. Tiemeijer, Dirk B. M. Klaassen
2006 J jnl
Implementation of plug-and-play ESD protection in 5.5GHz 90nm RF CMOS LNAs - Concepts, constraints and solutions.
Microelectron. Reliab.
Steven Thijs, M. Natarajan Iyer, Dimitri Linten, Wutthinan Jeamsaksiri, T. Daenen, Robin Degraeve, Andries J. Scholten, Stefaan Decoutere, Guido Groeseneken
2005 J jnl
Low-power voltage-controlled oscillators in 90-nm CMOS using high-quality thin-film postprocessed inductors.
IEEE J. Solid State Circuits
Dimitri Linten, Xiao Sun, Geert Carchon, Wutthinan Jeamsaksiri, Abdelkarim Mercha, Javier Ramos, Snezana Jenei, Piet Wambacq, Morin Dehan, Lars Aspemyr, Andries J. Scholten, Stefaan Decoutere, Stéphane Donnay, Walter De Raedt
2005 — conf
Unified non-quasi-static MOSFET model for large-signal and small-signal simulations.
CICC
Hailing Wang, Xin Li, Weimin Wu, Gennady Gildenblat, Ronald van Langevelde, G. D. J. Smitt, Andries J. Scholten, Dirk B. M. Klaassen
2004 — conf
A 328 μW 5 GHz voltage-controlled oscillator in 90 nm CMOS with high-quality thin-film post-processed inductor.
CICC
Dimitri Linten, Xiao Sun, Geert Carchon, Wutthinan Jeamsaksiri, Abdelkarim Mercha, Javier Ramos, Snezana Jenei, Lars Aspemyr, Andries J. Scholten, Piet Wambacq, Stefaan Decoutere, Stéphane Donnay, Walter De Raedt