Andreas Martin

11 papers Journal 9Unranked 2
YearRankTypeTitle / Venue / Authors
2022 — conf
Plasma processing induced charging damage (PID) assessment with appropriate fWLR stress methods ensuring expected MOS reliability and lifetimes for automotive products (Invited).
IRPS
Andreas Martin
2020 — conf
A New Implementation Approach for Reliability Design Rules against Plasma Induced Charging Damage from Well Configurations of Complex ICs.
IRPS
Andreas Martin, Angelika Kamp
2018 J jnl
Variation-resilient quantifiable plasma process induced damage monitoring.
Microelectron. Reliab.
D. Beckmeier, Andreas Martin
2016 J jnl
Degradation and recovery of variability due to BTI.
Microelectron. Reliab.
Christian Schlünder, Jörg Berthold, Fabian Proebster, Andreas Martin, Wolfgang Gustin, Hans Reisinger
2016 J jnl
Fast wafer level reliability monitoring as a tool to achieve automotive quality for a wafer process.
Microelectron. Reliab.
Andreas Martin, Rolf-Peter Vollertsen, A. Mitchell, M. Traving, D. Beckmeier, H. Nielen
2016 J jnl
Plasma process induced damage detection by fast wafer level reliability monitoring for automotive applications.
Microelectron. Reliab.
Daniel Beckmeier, Andreas Martin
2005 J jnl
Reliability of gate dielectrics and metal-insulator-metal capacitors.
Microelectron. Reliab.
Andreas Martin
2004 J jnl
An introduction to fast wafer level reliability monitoring for integrated circuit mass production.
Microelectron. Reliab.
Andreas Martin, Rolf-Peter Vollertsen
2003 J jnl
Ramped current stress for fast and reliable wafer level reliability monitoring of thin gate oxide reliability.
Microelectron. Reliab.
Andreas Martin, Jochen von Hagen, Glenn B. Alers
2001 J jnl
Editorial.
Microelectron. Reliab.
Andreas Martin
2001 J jnl
Quality assessment of thin oxides using constant and ramped stress measurements.
Microelectron. Reliab.
Gunnar Diestel, Andreas Martin, Martin Kerber, Alfred Schlemm, Horst Erlenmaier, Bernhard Murr, Andreas Preussger