Andrea Padovani

35 papers Journal 6Unranked 28

Year	Rank	Type	Title / Venue / Authors
2025	J	`jnl`	A Dual-Memory Ferroelectric Transistor Emulating Synaptic Metaplasticity for High-Speed Reservoir Computing. CoRR Yifan Wang, Muhammad Sakib Shahriar, Salma Soliman, Noah Vaillancourt, Lance Fernandes, Andrea Padovani, Asif Islam Khan, Md Sakib Hasan, Raisul Islam
2025	—	`conf`	A Novel D2 Plasma Treatment for Defect Passivation: From Modeling to Process Optimization. IRPS Sara Vecchi, Vikram Bhosle, Andrea Palmieri, Davide Cornigli, Fabrizio Buscemi, Andrea Padovani, Deven Raj, Andrew Cockburn, Lucien Date, Gaurav Thareja, Federico Nardi, Luca Larcher
2025	J	`jnl`	Defect-Aware Physics-Based Compact Model for Ferroelectric nvCap: From TCAD Calibration to Circuit Co-Design. CoRR Luca Fehlings, Nihal Raut, Md Hanif Ali, Francesco M. Puglisi, Andrea Padovani, Veeresh Deshpande, Erika Covi
2025	—	`conf`	Enhanced Memory Performance in Ferroelectric NAND Applications: The Role of Tunnel Dielectric Position for Robust 10-Year Retention. IRPS Prasanna Venkatesan Ravindran, Andrea Padovani, Lance Fernandes, Priyankka Gundlapudi Ravikumar, Chinsung Park, Huy Tran, Zekai Wang, Hari Jayasankar, Amrit Garlapati, Taeyoung Song, Hang Chen, Winston Chern, Zheng Wang, Kijoon Kim, Jongho Woog, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Shimeng Yu, Suman Datta, Luca Larcher, Gaurav Thareja, Asif Khan
2025	—	`conf`	Impact of Al-based Dipole Formation on Gate Stack Integrity and Reliability. IRPS Bruno Coppolelli, Davide Cornigli, Zheyuan Chen, Andrea Padovani, Sara Vecchi, Yanliu Dang, Luc Thomas, Luca Vandelli, Jianxin Lei, Naomi Yoshida, Renu Whig, Federico Nardi, Gaurav Thareja, Luca Larcher, Milan Pesic
2025	—	`conf`	Multi-Scale Modeling-Driven Material to Device Co-Optimization of Ferroelectric Capacitors with Oxygen Reservoir Layer (ORL) for Improved Endurance. IRPS Andrea Padovani, Nashrah Afroze, Yu-Hsin Kuo, Priyankka Gundlapudi Ravikumar, Prasanna Venkatesan Ravindran, Mengkun Tian, Asif Khan, Jihoon Choi, Jun Hee Lee, Luca Larcher, Gaurav Thareja
2025	—	`conf`	Understanding Correlation Between Memory Window Closure, Leakage and Read Delay Effects for FEFET Reliability Improvement: Role of IL and FE Traps. IRPS Priyankka Gundlapudi Ravikumar, Andrea Padovani, Prasanna Venkatesan Ravindran, Chinsung Park, Nashrah Afroze, Mengkun Tian, Suman Datta, Shimeng Yu, Luca Larcher, Gaurav Thareja, Asif Khan
2024	—	`conf`	Self-rectifying non-volatile tunneling synapse: multiscale modeling augmented development. IMW Bastien Beltrando, Marco A. Villena, Mondol Anik Kumar, Shruba Gangopadhyay, Deepak Kamalanathan, E. Smith, Nasrin Kazem, Ghazal Saheli, Stephen Weeks, Michael Haverty, Muthukumar Kaliappan, Andrea Padovani, S. Krishnan, Jeffrey W. Anthis, Luca Larcher, Milan Pesic
2023	—	`conf`	Insights into device and material origins and physical mechanisms behind cross temperature in 3D NAND. IRPS Milan Pesic, Bastien Beltrando, Tommaso Rollo, Cristian Zambelli, Andrea Padovani, Rino Micheloni, Rita Maji, Lisa Enman, Mark Saly, Yang Ho Bae, Jung-Bae Kim, Dong Kil Yim, Luca Larcher
2023	—	`conf`	Towards a Universal Model of Dielectric Breakdown. IRPS Andrea Padovani, Paolo La Torraca, Jack Strand, Alexander L. Shluger, Valerio Milo, Luca Larcher
2022	—	`conf`	Electron-assisted switching in FeFETs: Memory window dynamics - retention - trapping mechanisms and correlation. IRPS Milan Pesic, Bastien Beltrando, Andrea Padovani, Toshihiko Miyashita, Nam-Sung Kim, Luca Larcher
2022	—	`conf`	Reliability of Non-Volatile Memory Devices for Neuromorphic Applications: A Modeling Perspective (Invited). IRPS Andrea Padovani, Milan Pesic, Federico Nardi, Valerio Milo, Luca Larcher, Mondol Anik Kumar, Zunaid Baten
2022	—	`conf`	Variability and disturb sources in ferroelectric 3D NANDs and comparison to Charge-Trap equivalents. IMW Milan Pesic, Andrea Padovani, Tommaso Rollo, Bastien Beltrando, Jack Strand, Parnika Agrawal, Alexander L. Shluger, Luca Larcher
2021	—	`conf`	Variability sources and reliability of 3D - FeFETs. IRPS Milan Pesic, Bastien Beltrando, Andrea Padovani, Shruba Gangopadhyay, Muthukumar Kaliappan, Michael Haverty, Marco A. Villena, Enrico Piccinini, Matteo Bertocchi, Tony Chiang, Luca Larcher, Jack Strand, Alexander L. Shluger
2019	—	`conf`	Role of Defects in the Reliability of HfO2/Si-Based Spacer Dielectric Stacks for Local Interconnects. IRPS Chen Wu, Adrian Vaisman Chasin, Andrea Padovani, Alicja Lesniewska, Steven Demuynck, Kris Croes
2019	—	`conf`	Spatio-Temporal Defect Generation Process in Irradiated HfO2 MOS Stacks: Correlated Versus Uncorrelated Mechanisms. IRPS Fernando Leonel Aguirre, Andrea Padovani, Alok Ranjan, Nagarajan Raghavan, Nahuel Vega, Nahuel Muller, Sebastián Matías Pazos, Mario Debray, Joel Molina Reyes, Kin Leong Pey, Felix Palumbo
2019	—	`conf`	Understanding and Variability of Lateral Charge Migration in 3D CT-NAND Flash with and Without Band-Gap Engineered Barriers. IRPS Andrea Padovani, Milan Pesic, Mondol Anik Kumar, Pieter Blomme, Alexandre Subirats, Senthil Vadakupudhupalayam, Zunaid Baten, Luca Larcher
2018	—	`conf`	Role of electron and hole trapping in the degradation and breakdown of SiO2 and HfO2 films. IRPS David Z. Gao, Jack Strand, Al-Moatasem El-Sayed, Alexander L. Shluger, Andrea Padovani, Luca Larcher
2018	—	`conf`	Time-dependent dielectric breakdown statistics in SiO2 and HfO2 dielectrics: Insights from a multi-scale modeling approach. IRPS Andrea Padovani, Luca Larcher
2017	—	`conf`	A multiscale modeling approach for the simulation of OxRRAM devices. NVMTS Andrea Padovani, Luca Larcher, Jiyong Woo, Hyunsang Hwang
2017	J	`jnl`	Correlated Effects on Forming and Retention of Al Doping in HfO IEEE Des. Test Mouhamad Alayan, Elisa Vianello, Barbara De Salvo, Luca Perniola, Andrea Padovani, Luca Larcher
2016	J	`jnl`	Bipolar Resistive RAM Based on HfO IEEE J. Emerg. Sel. Topics Circuits Syst. Francesco Maria Puglisi, Luca Larcher, Andrea Padovani, Paolo Pavan
2016	—	`conf`	Multiscale modeling of electron-ion interactions for engineering novel electronic devices and materials. PATMOS Luca Larcher, Francesco Maria Puglisi, Andrea Padovani, Luca Vandelli, Paolo Pavan
2016	—	`conf`	Multiscale modeling of electron-ion interactions for engineering novel electronic devices and materials. PATMOS Luca Larcher, Francesco Maria Puglisi, Andrea Padovani, Luca Vandelli, Paolo Pavan
2015	—	`conf`	A microscopic physical description of RTN current fluctuations in HfOx RRAM. IRPS Francesco Maria Puglisi, Paolo Pavan, Luca Vandelli, Andrea Padovani, Matteo Bertocchi, Luca Larcher
2015	—	`conf`	Characterization of anomalous Random Telegraph Noise in Resistive Random Access Memory. ESSDERC Francesco Maria Puglisi, Luca Larcher, Andrea Padovani, Paolo Pavan
2014	—	`conf`	Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS. ESSDERC Francesco Maria Puglisi, Paolo Pavan, Luca Larcher, Andrea Padovani
2013	—	`conf`	A compact model of hafnium-oxide-based resistive random access memory. ICICDT Francesco Maria Puglisi, Paolo Pavan, Andrea Padovani, Luca Larcher
2013	J	`jnl`	Compact modeling of TANOS program/erase operations for SPICE-like circuit simulations. Microelectron. J. Andrea Padovani, Luca Larcher, Paolo Pavan
2013	—	`conf`	Connecting RRAM performance to the properties of the hafnia-based dielectrics. ESSDERC Gennadi Bersuker, Brian Butcher, David Gilmer, Paul Kirsch, Luca Larcher, Andrea Padovani
2013	—	`conf`	Random telegraph noise analysis to investigate the properties of active traps of HfO2-based RRAM in HRS. ESSDERC Francesco Maria Puglisi, Paolo Pavan, Andrea Padovani, Luca Larcher
2012	—	`conf`	Random Telegraph Signal noise properties of HfOx RRAM in high resistive state. ESSDERC Francesco Maria Puglisi, Paolo Pavan, Andrea Padovani, Luca Larcher, Gennadi Bersuker
2010	—	`conf`	Fundamental reliability issues of advanced charge-trapping Flash memory devices. ICECS Luca Larcher, Andrea Padovani
2010	J	`jnl`	High-kappa related reliability issues in advanced non-volatile memories. Microelectron. Reliab. Luca Larcher, Andrea Padovani
2009	—	`—`	Modeling and reliability of innovative flash memories. Andrea Padovani