Andrea Natale Tallarico

13 papers Journal 3Unranked 10
YearRankTypeTitle / Venue / Authors
2025 — conf
HTGB and DGS Reliability Assessment of e-mode GaN-HEMTs with Ferroelectric Gate Stack.
IRPS
Andrea Natale Tallarico, Maurizio Millesimo, U. Ibrar, Enrico Sangiorgi, Claudio Fiegna, T.-Y. Yang, J.-S. Wu, H. Iwai, E.-Y. Chang
2025 — conf
RTN Analysis of Schottky p-GaN Gate HEMTs Under Forward Gate Stress: Impact of Temperature.
IRPS
Maurizio Millesimo, Lorenzo Valentini, Claudio Fiegna, Enrico Sangiorgi, Andrea Natale Tallarico, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot
2024 — conf
Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate.
IRPS
Maurizio Millesimo, Claudio Fiegna, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Andrea Natale Tallarico
2022 — conf
A novel approach to analyze the reliability of GaN power HEMTs operating in a DC-DC Buck converter.
ESSDERC
Giuseppe Capasso, Mauro Zanuccoli, Andrea Natale Tallarico, Claudio Fiegna
2022 — conf
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition.
IRPS
Maurizio Millesimo, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Claudio Fiegna, Andrea Natale Tallarico
2020 — conf
Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors.
IRPS
Andrea Natale Tallarico, Susanna Reggiani, Riccardo Depetro, Giuseppe Croce, Enrico Sangiorgi, Claudio Fiegna
2019 — conf
An Integrated DC/DC Converter with Online Monitoring of Hot-Carrier Degradation.
ICECS
Matteo Pizzotti, Marco Crescentini, Andrea Natale Tallarico, Aldo Romani
2019 — conf
Characterization and Modeling of BTI in SiC MOSFETs.
ESSDERC
Davide Cornigli, Andrea Natale Tallarico, Susanna Reggiani, Claudio Fiegna, Enrico Sangiorgi, Luis Sanchez, Carlos Valdivieso, Giuseppe Consentino, Felice Crupi
2019 — conf
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability.
IRPS
Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot, Andrea Natale Tallarico, Enrico Sangiorgi, Claudio Fiegna, J. Zheng, X. Ma, Matteo Borga, Elena Fabris, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso, Juraj Priesol, Alexander Satka
2019 — conf
TCAD predictions of hot-electron injection in p-type LDMOS transistors.
ESSDERC
Federico Giuliano, Riccardo Depetro, Giuseppe Croce, Andrea Natale Tallarico, Susanna Reggiani, Antonio Gnudi, Enrico Sangiorgi, Claudio Fiegna, Mattia Rossetti, Antonio Molfese, Stefano Manzini
2018 J jnl
TCAD investigation on hot-electron injection in new-generation technologies.
Microelectron. Reliab.
Susanna Reggiani, Mattia Rossetti, Antonio Gnudi, Andrea Natale Tallarico, Antonio Molfese, Stefano Manzini, Riccardo Depetro, Giuseppe Croce, Enrico Sangiorgi, Claudio Fiegna
2017 J jnl
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level.
Microelectron. Reliab.
Isabella Rossetto, Matteo Meneghini, Eleonora Canato, Marco Barbato, Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Andrea Natale Tallarico, Gaudenzio Meneghesso, Enrico Zanoni
2017 J jnl
Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide.
Microelectron. Reliab.
Andrea Natale Tallarico, Susanna Reggiani, Paolo Magnone, Giuseppe Croce, Riccardo Depetro, P. Gattari, Enrico Sangiorgi, Claudio Fiegna