Anda Mocuta - RankMe

17 papers A* 1Misc 1Unranked 15

Year	Rank	Type	Title / Venue / Authors
2019	—	`conf`	CDM-Time Domain Turn-on Transient of ESD Diodes in Bulk FinFET and GAA NW Technologies. IRPS Shih-Hung Chen, Dimitri Linten, Geert Hellings, Marko Simicic, Ben Kaczer, Thomas Chiarella, Hans Mertens, Jérôme Mitard, Anda Mocuta, N. Horiguchi
2019	A*	`conf`	Process, Circuit and System Co-optimization of Wafer Level Co-Integrated FinFET with Vertical Nanosheet Selector for STT-MRAM Applications. DAC Trong Huynh Bao, Anabela Veloso, Sushil Sakhare, Philippe Matagne, Julien Ryckaert, Manu Perumkunnil, Davide Crotti, Farrukh Yasin, Alessio Spessot, Arnaud Furnémont, Gouri Sankar Kar, Anda Mocuta
2018	—	`conf`	New methodology for modelling MOL TDDB coping with variability. IRPS Philippe J. Roussel, Adrian Vaisman Chasin, Steven Demuynck, Naoto Horiguchi, Dimitri Linten, Anda Mocuta
2017	—	`conf`	Dedicated technology threshold voltage tuning for 6T SRAM beyond N7. ICICDT Mohit Kumar Gupta, Pieter Weckx, Stefan Cosemans, Pieter Schuddinck, Rogier Baert, Doyoung Jang, Yasser Sherazi, Praveen Raghavan, Alessio Spessot, Anda Mocuta, Wim Dehaene
2017	—	`conf`	Device circuit and technology co-optimisation for FinFET based 6T SRAM cells beyond N7. ESSDERC Mohit Kumar Gupta, Pieter Weckx, Stefan Cosemans, Pieter Schuddinck, Rogier Baert, Dmitry Yakimets, Doyoung Jang, Yasser Sherazi, Praveen Raghavan, Alessio Spessot, Anda Mocuta, Wim Dehaene
2017	—	`conf`	On the ballistic ratio in 14nm-Node FinFETs. ESSDERC Fabian M. Bufler, Kenichi Miyaguchi, Thomas Chiarella, N. Horiguchi, Anda Mocuta
2017	—	`conf`	SRAM designs for 5nm node and beyond: Opportunities and challenges. ICICDT Trong Huynh Bao, Sushil Sakhare, Julien Ryckaert, Alessio Spessot, Diederik Verkest, Anda Mocuta
2016	—	`conf`	Non-uniform strain in lattice-mismatched heterostructure tunnel field-effect transistors. ESSDERC Devin Verreck, Anne S. Verhulst, Bart Soree, Nadine Collaert, Anda Mocuta, Aaron Thean, Guido Groeseneken
2016	—	`conf`	Towards high performance sub-10nm finW bulk FinFET technology. ESSDERC Thomas Chiarella, Stefan Kubicek, E. Rosseel, Romain Ritzenthaler, Andriy Hikavyy, P. Eyben, An De Keersgieter, L.-Å. Ragnarsson, M.-S. Kim, S.-A. Chew, Tom Schram, S. Demuynck, Miroslav Cupák, Luc Rijnders, Morin Dehan, Naoto Horiguchi, Jérôme Mitard, Dan Mocuta, Anda Mocuta, Aaron Voon-Yew Thean
2015	—	`conf`	Assessment of SiGe quantum well transistors for DRAM peripheral applications. ICICDT Romain Ritzenthaler, Tom Schram, Geert Eneman, Anda Mocuta, Naoto Horiguchi, Aaron Voon-Yew Thean, Alessio Spessot, Marc Aoulaiche, Pierre Fazan, K. B. Noh, Y. Son
2015	—	`conf`	FinFET stressor efficiency on alternative wafer and channel orientations for the 14 nm node and below. ICICDT Geert Eneman, An De Keersgieter, Anda Mocuta, Nadine Collaert, Aaron Thean
2015	—	`conf`	Holisitic device exploration for 7nm node. CICC Praveen Raghavan, Marie Garcia Bardon, Doyoung Jang, P. Schuddinck, Dmitry Yakimets, Julien Ryckaert, Abdelkarim Mercha, Naoto Horiguchi, Nadine Collaert, Anda Mocuta, Dan Mocuta, Zsolt Tokei, Diederik Verkest, Aaron Thean, An Steegen
2015	—	`conf`	I/O thick oxide device integration using Diffusion and Gate Replacement (D&GR) gate stack integration. ICICDT Romain Ritzenthaler, Tom Schram, M. J. Cho, Anda Mocuta, Naoto Horiguchi, Aaron Voon-Yew Thean, Alessio Spessot, Christian Caillat, Marc Aoulaiche, Pierre Fazan, K. B. Noh, Y. Son
2015	—	`conf`	Impact of fin shape variability on device performance towards 10nm node. ICICDT Kazuyuki Tomida, Keizo Hiraga, Morin Dehan, Geert Hellings, Doyoung Jang, Kenichi Miyaguchi, Thomas Chiarella, Minsoo Kim, Anda Mocuta, Naoto Horiguchi, Abdelkarim Mercha, Diederik Verkest, Aaron Thean
2015	—	`conf`	Modeling FinFET metal gate stack resistance for 14nm node and beyond. ICICDT Kenichi Miyaguchi, Bertrand Parvais, Lars-Åke Ragnarsson, Piet Wambacq, Praveen Raghavan, Abdelkarim Mercha, Anda Mocuta, Diederik Verkest, Aaron Thean
2015	—	`conf`	Nonparabolicity and confinement effects of IIIV materials in novel transistors. ICICDT M. Ali Pourghaderi, Anda Mocuta, Aaron Thean
2005	Misc	`conf`	Direct Temperature Measurement for VLSI Circuits and 3-D Modeling of Self-Heating in Sub-0.13 mum SOI Technologies. VLSI Design Rajiv V. Joshi, S. S. Kang, N. Zamdmar, Anda Mocuta, Ching-Te Chuang, J. A. Pascual-Gutiérrez