Anant K. Agarwal

15 papers Journal 2Unranked 13
YearRankTypeTitle / Venue / Authors
2025 — conf
Investigation of Screening Methods for 1.2 kV 4H-SiC MOSFETs Using High Gate Voltage Pulses and Unclampled Inductive Switching.
IRPS
Seung Yup Jang, Justin Lynch, Adam J. Morgan, Dinuth C. Y. B. Yapa Mudiyanselage, WoongJe Sung, Limeng Shi, Anant K. Agarwal
2024 — conf
Evaluation of Burn-in Technique on Gate Oxide Reliability in Commercial SiC MOSFETs.
IRPS
Limeng Shi, Jiashu Qian, Michael Jin, Monikuntala Bhattacharya, Hengyu Yu, Marvin H. White, Anant K. Agarwal, Atsushi Shimbori
2024 — conf
Investigation of the Electron Trapping in Commercial Thick Silicon Dioxides Thermally Grown on 4H-SiC under the Constant Current Stress.
IRPS
Jiashu Qian, Limeng Shi, Michael Jin, Monikuntala Bhattacharya, Hengyu Yu, Marvin H. White, Anant K. Agarwal, Atsushi Shimbori, Tianshi Liu, Shengnan Zhu
2023 — conf
Investigation of different screening methods on threshold voltage and gate oxide lifetime of SiC Power MOSFETs.
IRPS
Limeng Shi, Shengnan Zhu, Jiashu Qian, Michael Jin, Monikuntala Bhattacharya, Marvin H. White, Anant K. Agarwal, Atsushi Shimbori, Tianshi Liu
2023 — conf
Reliability Comparison of Commercial Planar and Trench 4H-SiC Power MOSFETs.
IRPS
Shengnan Zhu, Limeng Shi, Michael Jin, Jiashu Qian, Monikuntala Bhattacharya, Hema Lata Rao Maddi, Marvin H. White, Anant K. Agarwal, Tianshi Liu, Atsushi Shimbori, Chingchi Chen
2022 — conf
A 600V Half-Bridge Power Stage Fully Integrated with 25V Gate-Drivers in SiC CMOS Technology.
MWSCAS
Hua Zhang, Tianshi Liu, Utsav Gupta, Sundar Babu Isukapati, Emran K. Ashik, Adam J. Morgan, Bongmook Lee, WoongJe Sung, Anant K. Agarwal, Ayman A. Fayed
2022 — conf
Bias Temperature Instability on SiC n- and p-MOSFETs for High Temperature CMOS Applications.
IRPS
Emran K. Ashik, Sundar Babu Isukapati, Hua Zhang, Tianshi Liu, Utsav Gupta, Adam J. Morgan, Veena Misra, WoongJe Sung, Ayman A. Fayed, Anant K. Agarwal, Bongmook Lee
2022 — conf
Defects in 4H-SiC epilayers affecting device yield and reliability.
IRPS
Robert Stahlbush, Nadeemullah A. Mahadik, Peter Bonanno, Jake Soto, Bruce Odekirk, WoongJe Sung, Anant K. Agarwal
2021 J jnl
Experimental Determination of Interface Trap Density and Fixed Positive Oxide Charge in Commercial 4H-SiC Power MOSFETs.
IEEE Access
Susanna Yu, Marvin H. White, Anant K. Agarwal
2021 — conf
Investigation of Gate Leakage Current Behavior for Commercial 1.2 kV 4H-SiC Power MOSFETs.
IRPS
Shengnan Zhu, Tianshi Liu, Marvin H. White, Anant K. Agarwal, Arash Salemi, David Sheridan
2021 — conf
SPICE Modeling and CMOS Circuit Development of a SiC Power IC Technology.
MWSCAS
Tianshi Liu, Hua Zhang, Sundar Babu Isukapati, Emaran Ashik, Adam J. Morgan, Bongmook Lee, WoongJe Sung, Marvin H. White, Ayman A. Fayed, Anant K. Agarwal
2020 — conf
Gate Oxide Reliability Studies of Commercial 1.2 kV 4H-SiC Power MOSFETs.
IRPS
Tianshi Liu, Shengnan Zhu, Susanna Yu, Diang Xing, Arash Salemi, Minseok Kang, Kristen Booth, Marvin H. White, Anant K. Agarwal
2020 — conf
Threshold Voltage Instability of Commercial 1.2 kV SiC Power MOSFETs.
IRPS
Susanna Yu, Tianshi Liu, Shengnan Zhu, Diang Xing, Arash Salemi, Minseok Kang, Kristen Booth, Marvin H. White, Anant K. Agarwal
2019 — conf
Design Strategies for Rugged SiC Power Devices.
IRPS
Diang Xing, Tianshi Liu, Susanna Yu, Minseok Kang, Arash Salemi, Marvin H. White, Anant K. Agarwal
1992 J jnl
A study of single-phase to three-phase cycloconverters using PSPICE.
IEEE Trans. Ind. Electron.
Vineeta Agrawal, Anant K. Agarwal, Krishna Kant