Aminul Islam

27 papers Journal 19Unranked 8
YearRankTypeTitle / Venue / Authors
2023 J jnl
Design and Investigation of a Metamorphic InAs Channel Inset InP HEMT for Cryogenic Low-Noise Amplifiers.
IEEE Access
Soumak Nandi, Shashank Kumar Dubey, Mukesh Kumar, Amit Krishna Dwivedi, Manisha Guduri, Aminul Islam
2021 J jnl
Design of Soft-Error-Aware SRAM With Multi-Node Upset Recovery for Aerospace Applications.
IEEE Trans. Circuits Syst. I Regul. Pap.
Soumitra Pal, Sayonee Mohapatra, Wing-Hung Ki, Aminul Islam
2021 J jnl
Highly Stable Low Power Radiation Hardened Memory-by-Design SRAM for Space Applications.
IEEE Trans. Circuits Syst. II Express Briefs
Soumitra Pal, Dodla Divya Sri, Wing-Hung Ki, Aminul Islam
2021 J jnl
Radiation-hardened read-decoupled low-power 12T SRAM for space applications.
Int. J. Circuit Theory Appl.
Soumitra Pal, Dodla Divya Sri, Wing-Hung Ki, Aminul Islam
2021 J jnl
Soft-Error-Aware Read-Decoupled SRAM With Multi-Node Recovery for Aerospace Applications.
IEEE Trans. Circuits Syst. II Express Briefs
Soumitra Pal, Sayonee Mohapatra, Wing-Hung Ki, Aminul Islam
2021 J jnl
Soft-Error-Immune Read-Stability-Improved SRAM for Multi-Node Upset Tolerance in Space Applications.
IEEE Trans. Circuits Syst. I Regul. Pap.
Soumitra Pal, Sayonee Mohapatra, Wing-Hung Ki, Aminul Islam
2020 J jnl
Reliable write assist low power SRAM cell for wireless sensor network applications.
IET Circuits Devices Syst.
Soumitra Pal, Subhankar Bose, Wing-Hung Ki, Aminul Islam
2020 J jnl
Variation resilient reliable design of trigger pulse generator.
IET Circuits Devices Syst.
Amresh Kumar, Amit Krishna Dwivedi, Aminul Islam
2019 J jnl
Design and development of memristor-based RRAM.
IET Circuits Devices Syst.
Soumitra Pal, Vivek Gupta, Wing-Hung Ki, Aminul Islam
2019 J jnl
Design of CNFET based power- and variability-aware nonvolatile RRAM cell.
Microelectron. J.
Soumitra Pal, Vivek Gupta, Aminul Islam
2019 J jnl
Transmission gate-based 9T SRAM cell for variation resilient low power and reliable internet of things applications.
IET Circuits Devices Syst.
Soumitra Pal, Vivek Gupta, Wing-Hung Ki, Aminul Islam
2018 — conf
Design of low power RRAM cell using CNFET.
RAIT
Srinithya Nagiri, Sananya Majumder, Riya, Aminul Islam
2018 J jnl
Reliable and Q-Enhanced Floating Active Inductors and Their Application in RF Bandpass Filters.
IEEE Access
Rishab Mehra, Vikash Kumar, Aminul Islam
2017 — conf
A double trench 4H - SiC MOSFET as an enhanced model of SiC UMOSFET.
ISED
Alisha Oraon, Shradha Shreya, Renuka Kumari, Aminul Islam
2017 — conf
Design of nonvolatile MRAM bitcell.
ISED
Nikita Gupta, Pragati Thakur, Shashank Kumar Dubey, Aminul Islam
2017 J jnl
Variation-aware widely tunable nanoscale design of CMOS active inductor-based RF bandpass filter.
Int. J. Circuit Theory Appl.
Rishab Mehra, Vikash Kumar, Aminul Islam, Brajesh Kumar Kaushik
2016 J jnl
Design of magnetic tunnel junction-based tunable spin torque oscillator at nanoscale regime.
IET Circuits Devices Syst.
Amit Krishna Dwivedi, Aminul Islam
2016 — conf
Investigation on electrical characteristics of FDSOI device for ultra-low power operation.
RAIT
Manisha Guduri, Sudip Kundu, Aminul Islam
2016 J jnl
Variation Tolerant Differential 8T SRAM Cell for Ultralow Power Applications.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Soumitra Pal, Aminul Islam
2015 J jnl
Circuit-level design technique to mitigate impact of process, voltage and temperature variations in complementary metal-oxide semiconductor full adder cells.
IET Circuits Devices Syst.
Vishesh Dokania, Aminul Islam
2015 — conf
Comparative analysis of various 9T SRAM cell at 22-nm technology node.
ReTIS
Chandaramauleshwar Roy, Aminul Islam
2015 — conf
Technology scaling and its side effects.
VDAT
Aminul Islam
2014 J jnl
Design and Analysis of Robust Spin Transfer Torque Magnetic Random Access Memory Bitcell Using FinFET.
J. Low Power Electron.
Arundhati Bhattacharya, Aminul Islam
2012 J jnl
A technique to mitigate impact of process, voltage and temperature variations on design metrics of SRAM Cell.
Microelectron. Reliab.
Aminul Islam, Mohd. Hasan
2012 J jnl
Variability aware low leakage reliable SRAM cell design technique.
Microelectron. Reliab.
Aminul Islam, Mohd. Hasan
2011 — conf
Low Active Power High Speed Cache Design.
ISED
Aminul Islam, Mohd. Ajmal Kafeel, Ale Imran, Mohd. Hasan
2010 — conf
High Speed Cache Design Using Multi-diameter CNFET at 32nm Technology.
ICT
Aminul Islam, Mohd. Hasan