Alexander L. Shluger

12 papers B 1Journal 3Unranked 8
YearRankTypeTitle / Venue / Authors
2023 — conf
Towards a Universal Model of Dielectric Breakdown.
IRPS
Andrea Padovani, Paolo La Torraca, Jack Strand, Alexander L. Shluger, Valerio Milo, Luca Larcher
2022 — conf
Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristics.
IRPS
James Farmer, Dmitry Veksler, E. Tang, Gennadi Bersuker, David Z. Gao, Al-Moatasem El-Sayed, Thomas Durrant, Alexander L. Shluger, Thomas Rueckes, Lee Cleveland, Harry Luan, Rahul Sen
2022 — conf
Defining the performance of SiOx ReRAM by engineering oxide microstructure.
MOCAST
Anthony J. Kenyon, Adnan Mehonic, Wing H. Ng, Longfei Zhao, Horatio Cox, Mark Buckwell, Kamal Patel, Andrew P. Knights, Daniel J. Mannion, Alexander L. Shluger
2022 B conf
Hydrogen Induced Dipole Layer in Pd-SiO2 Based Gas Sensors.
SAS
Idan Shem Tov, Anwesha Mukherjee, Joseph Hayon, Laura Hargreaves, Alexander L. Shluger, Yossi Rosenwaks
2022 — conf
Variability and disturb sources in ferroelectric 3D NANDs and comparison to Charge-Trap equivalents.
IMW
Milan Pesic, Andrea Padovani, Tommaso Rollo, Bastien Beltrando, Jack Strand, Parnika Agrawal, Alexander L. Shluger, Luca Larcher
2021 — conf
Mitigating switching variability in carbon nanotube memristors.
IRPS
James Farmer, William Whitehead, Andrew Hall, Dmitry Veksler, Gennadi Bersuker, David Z. Gao, Al-Moatasem El-Sayed, Thomas Durrant, Alexander L. Shluger, Thomas Rueckes, Lee Cleveland, Harry Luan, Rahul Sen
2021 — conf
Variability sources and reliability of 3D - FeFETs.
IRPS
Milan Pesic, Bastien Beltrando, Andrea Padovani, Shruba Gangopadhyay, Muthukumar Kaliappan, Michael Haverty, Marco A. Villena, Enrico Piccinini, Matteo Bertocchi, Tony Chiang, Luca Larcher, Jack Strand, Alexander L. Shluger
2018 J jnl
Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence.
Microelectron. Reliab.
Wolfgang Goes, Yannick Wimmer, Al-Moatasem El-Sayed, Gerhard Rzepa, Markus Jech, Alexander L. Shluger, Tibor Grasser
2018 — conf
Role of electron and hole trapping in the degradation and breakdown of SiO2 and HfO2 films.
IRPS
David Z. Gao, Jack Strand, Al-Moatasem El-Sayed, Alexander L. Shluger, Andrea Padovani, Luca Larcher
2015 J jnl
Efficient parametrization of complex molecule-surface force fields.
J. Comput. Chem.
David Z. Gao, Filippo Federici Canova, Matthew B. Watkins, Alexander L. Shluger
2015 — conf
On the volatility of oxide defects: Activation, deactivation, and transformation.
IRPS
Tibor Grasser, M. Wahl, Wolfgang Goes, Yannick Wimmer, Al-Moatasem El-Sayed, Alexander L. Shluger, Ben Kaczer
2010 J jnl
QM/MM method for metal-organic interfaces.
J. Comput. Chem.
Maria L. Sushko, Peter V. Sushko, Igor V. Abarenkov, Alexander L. Shluger