Alessandro Chini

15 papers Journal 8Unranked 7
YearRankTypeTitle / Venue / Authors
2023 — conf
Evidence of Carbon Doping Effect on VTH Drift and Dynamic-RON of 100V p-GaN Gate AlGaN/GaN HEMTs.
IRPS
Marcello Cioni, G. Giorgino, Alessandro Chini, Carmine Miccoli, Maria Eloisa Castagna, M. Moschetti, C. Tringali, Ferdinando Iucolano
2022 — conf
A Novel Temperature Estimation Technique Exploiting Carrier Emission from Buffer Traps.
ESSDERC
Marcello Cioni, Nicolò Zagni, Alessandro Chini
2022 — conf
Fe-Traps Influence on Time-dependent Breakdown Voltage in 0.1-μm GaN HEMTs for 5G Applications.
IRPS
Marcello Cioni, Nicolò Zagni, Alessandro Chini
2022 — conf
Identification of Interface States responsible for VTH Hysteresis in packaged SiC MOSFETs.
IRPS
Marcello Cioni, Patrick Fiorenza, Fabrizio Roccaforte, Mario Saggio, Salvatore Cascino, Angelo Alberto Messina, Vincenzo Vinciguerra, Michele Calabretta, Alessandro Chini
2021 — conf
Investigation on VTH and RON Slow/Fast Drifts in SiC MOSFETs.
IRPS
Marcello Cioni, Alessandro Bertacchini, Alessandro Mucci, Giovanni Verzellesi, Paolo Pavan, Alessandro Chini
2020 — conf
Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs.
IRPS
Nicolò Zagni, Alessandro Chini, Francesco Maria Puglisi, Paolo Pavan, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Giovanni Verzellesi
2018 — conf
A novel GaN HEMT degradation mechanism observed during HTST test.
IRPS
Ferdinando Iucolano, Antonino Maurizio Parisi, Santo Reina, Alessandro Chini
2018 J jnl
On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs.
Microelectron. Reliab.
Mehdi Rzin, Alessandro Chini, Carlo De Santi, Matteo Meneghini, A. Hugger, Marc Hollmer, H. Stieglauer, M. Madel, J. Splettstößer, Daniel Sommer, Jan Grünenpütt, K. Beilenhoff, Hervé Blanck, J.-T. Chen, O. Kordina, Gaudenzio Meneghesso, Enrico Zanoni
2015 J jnl
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs.
Microelectron. Reliab.
Davide Bisi, Antonio Stocco, Isabella Rossetto, Matteo Meneghini, Fabiana Rampazzo, Alessandro Chini, Fabio Soci, Alessio Pantellini, Claudio Lanzieri, Piero Gamarra, Cedric Lacam, M. Tordjman, Marie-Antoinette di Forte-Poisson, Davide De Salvador, Marco Bazzan, Gaudenzio Meneghesso, Enrico Zanoni
2014 J jnl
Reliability Investigation of GaN HEMTs for MMICs Applications.
Micromachines
Alessandro Chini, Gaudenzio Meneghesso, Alessio Pantellini, Claudio Lanzieri, Enrico Zanoni
2014 J jnl
Traps localization and analysis in GaN HEMTs.
Microelectron. Reliab.
Alessandro Chini, Fabio Soci, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni
2013 J jnl
Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs.
Microelectron. Reliab.
Alessandro Chini, Fabio Soci, Fausto Fantini, A. Nanni, A. Pantellini, Claudio Lanzieri, Gaudenzio Meneghesso, Enrico Zanoni
2012 J jnl
Field plate related reliability improvements in GaN-on-Si HEMTs.
Microelectron. Reliab.
Alessandro Chini, Fabio Soci, Fausto Fantini, Antonio Nanni, Alessio Pantellini, Claudio Lanzieri, Davide Bisi, Gaudenzio Meneghesso, Enrico Zanoni
2010 J jnl
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress.
Microelectron. Reliab.
Valerio Di Lecce, Michele Esposto, Matteo Bonaiuti, Gaudenzio Meneghesso, Enrico Zanoni, Fausto Fantini, Alessandro Chini
2005 J jnl
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues.
Microelectron. Reliab.
Giovanni Verzellesi, Gaudenzio Meneghesso, Alessandro Chini, Enrico Zanoni, Claudio Canali