Alberto Castellazzi

47 papers C 4Journal 38Unranked 5
YearRankTypeTitle / Venue / Authors
2024 — conf
Enhancing Electrical Ruggedness in Double-Sided Cooled Power Modules.
PRIME
Ciro Scognamillo, Antonio Pio Catalano, Lorenzo Codecasa, Alberto Castellazzi, Vincenzo d'Alessandro
2022 — conf
Defect Detection in Double-Sided Cooled Power Modules by Structure Functions.
PRIME
Ciro Scognamillo, Antonio Pio Catalano, Vincenzo d'Alessandro, Lorenzo Codecasa, Alberto Castellazzi
2019 — conf
VTH-Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate.
IRPS
Besar Asllani, Alberto Castellazzi, Oriol Avino-Salvado, Asad Fayyaz, Hervé Morel, Dominique Planson
2018 J jnl
Avalanche ruggedness of parallel SiC power MOSFETs.
Microelectron. Reliab.
Asad Fayyaz, Besar Asllani, Alberto Castellazzi, Michele Riccio, Andrea Irace
2018 J jnl
Experimentally validated methodology for real-time temperature cycle tracking in SiC power modules.
Microelectron. Reliab.
Fausto Stella, Olufisayo Olanrewaju, Zineng Yang, Alberto Castellazzi, Gianmario Pellegrino
2018 J jnl
GaN transistors efficient cooling by graphene foam.
Microelectron. Reliab.
Mattia Antonini, Paolo Cova, Nicola Delmonte, Alberto Castellazzi
2018 J jnl
Impact of underfill and other physical dimensions on Silicon Lateral IGBT package reliability using computer model with discrete and continuous design variables.
Microelectron. Reliab.
Pushparajah Rajaguru, H. Lu, Chris Bailey, Alberto Castellazzi, V. Pathirana, N. Udugampola, Florin Udrea
2018 — conf
Single pulse short-circuit robustness and repetitive stress aging of GaN GITs.
IRPS
Alberto Castellazzi, Asad Fayyaz, Siwei Zhu, Thorsten Oeder, Martin Pfost
2017 J jnl
Electrical and thermal failure modes of 600 V p-gate GaN HEMTs.
Microelectron. Reliab.
Thorsten Oeder, Alberto Castellazzi, Martin Pfost
2017 J jnl
Evaluation of SiC Schottky Diodes Using Pressure Contacts.
IEEE Trans. Ind. Electron.
Jose Angel Ortiz Gonzalez, Olayiwola Alatise, Attahir Murtala Aliyu, Pushparajah Rajaguru, Alberto Castellazzi, Li Ran, Philip Mawby, Chris Bailey
2017 J jnl
Measuring structure functions of power devices in inverters.
Microelectron. Reliab.
Attahir Murtala Aliyu, Alberto Castellazzi
2017 J jnl
Thermal design and characterization of a modular integrated liquid cooled 1200 V-35 A SiC MOSFET bi-directional switch.
Microelectron. Reliab.
Paolo Cova, Attahir Murtala Aliyu, Alberto Castellazzi, Diego Chiozzi, Nicola Delmonte, Philippe Lasserre, N. Pignoloni
2016 J jnl
Body diode reliability investigation of SiC power MOSFETs.
Microelectron. Reliab.
Asad Fayyaz, Gianpaolo Romano, Alberto Castellazzi
2016 J jnl
Development and characterisation of pressed packaging solutions for high-temperature high-reliability SiC power modules.
Microelectron. Reliab.
Jose Angel Ortiz Gonzalez, Attahir Murtala Aliyu, Olayiwola Alatise, Alberto Castellazzi, Li Ran, Phil Mawby
2016 C conf
Novel multilevel hybrid inverter topology with power scalability.
IECON
Emre Gurpinar, Alberto Castellazzi
2016 J jnl
Observer based dynamic adaptive cooling system for power modules.
Microelectron. Reliab.
Xiang Wang, Alberto Castellazzi, Pericle Zanchetta
2016 J jnl
SiC power MOSFETs performance, robustness and technology maturity.
Microelectron. Reliab.
Alberto Castellazzi, Asad Fayyaz, Gianpaolo Romano, Li Yang, Michele Riccio, Andrea Irace
2016 J jnl
Thermal design optimization of novel modular power converter assembly enabling higher performance, reliability and availability.
Microelectron. Reliab.
Paolo Cova, Nicola Delmonte, Adane Kassa Solomon, Alberto Castellazzi
2015 C conf
GaN-based consumer application DC-DC converter for PCB embedment technology integration.
IECON
Antonio D. Martínez-Pérez, Adane Kassa Solomon, Alberto Castellazzi, Bing Lu
2015 J jnl
High temperature pulsed-gate robustness testing of SiC power MOSFETs.
Microelectron. Reliab.
Asad Fayyaz, Alberto Castellazzi
2014 C conf
Full-order observer based IGBT temperature online estimation.
IECON
Xiang Wang, Alberto Castellazzi, Pericle Zanchetta
2014 J jnl
Overload robust IGBT design for SSCB application.
Microelectron. Reliab.
Ihsan Supono, Jesús Urresti, Alberto Castellazzi, David Flores
2014 J jnl
Robust snubberless soft-switching power converter using SiC power MOSFETs and bespoke thermal design.
Microelectron. Reliab.
Francesco Giuliani, De Dipankar, Nicola Delmonte, Alberto Castellazzi, Paolo Cova
2014 J jnl
Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs.
Microelectron. Reliab.
Asad Fayyaz, Li Yang, Michele Riccio, Alberto Castellazzi, Andrea Irace
2013 J jnl
Experimental analysis of electro-thermal instability in SiC Power MOSFETs.
Microelectron. Reliab.
Michele Riccio, Alberto Castellazzi, Giuseppe De Falco, Andrea Irace
2013 J jnl
High temperature gate-bias and reverse-bias tests on SiC MOSFETs.
Microelectron. Reliab.
Li Yang, Alberto Castellazzi
2013 C conf
Performance evaluation of normaly-off SiC JFET in matrix converter without antiparrallel diodes.
IECON
Saeed Safari, Alberto Castellazzi, Pat Wheeler
2012 J jnl
A closed-loop IGBT non-destructive tester.
Microelectron. Reliab.
Ashraf Ahmed, Yasaman Shadrokh, Lee Coulbeck, Alberto Castellazzi, C. Mark Johnson
2012 J jnl
Circuit design and experimental test of a high power IGBT non-destructive tester.
Microelectron. Reliab.
Ashraf Ahmed, Alberto Castellazzi, L. Coulbeck, M. C. Johnson
2012 — conf
Design and test of a high power IGBT non-destructive tester.
ISIE
Ashraf Ahmed, Alberto Castellazzi, L. Coulbeck, M. C. Johnson
2012 J jnl
Repetitive high peak current pulsed discharge film-capacitor reliability testing.
Microelectron. Reliab.
H. Q. S. Dang, Martin R. Corfield, Alberto Castellazzi, C. Mark Johnson, Patrick Wheeler
2012 J jnl
Thermal instability effects in SiC Power MOSFETs.
Microelectron. Reliab.
Alberto Castellazzi, Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara
2011 J jnl
A study of SiC Power BJT performance and robustness.
Microelectron. Reliab.
Alberto Castellazzi, T. Takuno, Ryutaro Onishi, Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara
2011 J jnl
Dynamic active cooling for improved power system reliability.
Microelectron. Reliab.
Alberto Castellazzi, Wei Juin Choy, Pericle Zanchetta
2010 J jnl
Control technique for power device electro-thermal stress minimisation in non-linear load variable-frequency resonant power converters.
Microelectron. Reliab.
Fabio Carastro, Alberto Castellazzi, Jon C. Clare, Patrick Wheeler
2009 J jnl
Reliability considerations in pulsed power resonant conversion.
Microelectron. Reliab.
Fabio Carastro, Alberto Castellazzi, Jon C. Clare, M. C. Johnson, Michael J. Bland, Patrick W. Wheeler
2008 J jnl
Novel simulation approach for transient analysis and reliable thermal management of power devices.
Microelectron. Reliab.
Alberto Castellazzi, Mauro Ciappa
2007 J jnl
A study of the threshold-voltage suitability as an application-related reliability indicator for planar-gate non-punch-through IGBTs.
Microelectron. Reliab.
Alberto Castellazzi, Mauro Ciappa, Wolfgang Fichtner, M. Piton, Michel Mermet-Guyennet
2007 J jnl
Failure-relevant abnormal events in power inverters considering measured IGBT module temperature inhomogeneities.
Microelectron. Reliab.
X. Perpiñà, Alberto Castellazzi, M. Piton, Michel Mermet-Guyennet, José Millán
2007 J jnl
Robustness test and failure analysis of IGBT modules during turn-off.
Microelectron. Reliab.
Jesús Urresti-Ibañez, Alberto Castellazzi, M. Piton, José Rebollo, Michel Mermet-Guyennet, Mauro Ciappa
2007 J jnl
Virtual reliability assessment of integrated power switches based on multi-domain simulation approach.
Microelectron. Reliab.
Pierre Solomalala, J. Saiz, Michel Mermet-Guyennet, Alberto Castellazzi, Mauro Ciappa, X. Chauffleur, Jean-Pierre Fradin
2006 J jnl
Compact modelling and analysis of power-sharing unbalances in IGBT-modules used in traction applications.
Microelectron. Reliab.
Alberto Castellazzi, Mauro Ciappa, Wolfgang Fichtner, G. Lourdel, Michel Mermet-Guyennet
2006 J jnl
New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions.
Microelectron. Reliab.
Davide Barlini, Mauro Ciappa, Alberto Castellazzi, Michel Mermet-Guyennet, Wolfgang Fichtner
2006 J jnl
Thermal characterisation of power devices during transient operation.
Microelectron. J.
Alberto Castellazzi, Martin Honsberg-Riedl, Gerhard K. M. Wachutka
2004 J jnl
Analysis of PowerMOSFET chips failed in thermal instability.
Microelectron. Reliab.
Alberto Castellazzi, H. Schwarzbauer, Doris Schmitt-Landsiedel
2003 J jnl
Hot-Spot Meaurements and Analysis of Electro-Thermal Effects in Low-Voltage Power-MOSFET's.
Microelectron. Reliab.
Alberto Castellazzi, V. Kartal, R. Kraus, Norbert Seliger, Martin Honsberg-Riedl, Doris Schmitt-Landsiedel
2002 J jnl
Reliability analysis of power MOSFET's with the help of compact models and circuit simulation.
Microelectron. Reliab.
Alberto Castellazzi, R. Kraus, Norbert Seliger, Doris Schmitt-Landsiedel