| Year | Rank | Type | Title / Venue / Authors |
|---|---|---|---|
| 2025 | J | jnl |
IEEE Access
|
| 2024 | J | jnl |
ACM Trans. Design Autom. Electr. Syst.
|
| 2024 | Misc | conf |
VTS
|
| 2024 | — | conf |
WF-IoT
|
| 2024 | — | conf |
GLOBECOM (Workshops)
|
| 2023 | — | conf |
RWS
|
| 2023 | C | conf |
ICCE
|
| 2023 | — | conf |
ASICON
|
| 2023 | — | conf |
A-SSCC
|
| 2023 | — | conf |
SmartIoT
|
| 2021 | C | conf |
ICCE
|
| 2020 | J | jnl |
IEEE Access
|
| 2020 | — | conf |
HCI (23)
|
| 2019 | J | jnl |
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
|
| 2019 | B | conf |
GLOBECOM
|
| 2019 | — | conf |
ICICDT
|
| 2019 | J | jnl |
J. Commun.
|
| 2018 | — | conf |
RWS
|
| 2018 | — | conf |
RWS
|
| 2017 | J | jnl |
Integr.
|
| 2017 | — | conf |
ASICON
|
| 2017 | — | conf |
LASCAS
|
| 2017 | — | conf |
NEMS
|
| 2017 | — | conf |
NEMS
|
| 2017 | — | conf |
NEMS
|
| 2016 | J | jnl |
A Systematic Study of ESD Protection Co-Design With High-Speed and High-Frequency ICs in 28 nm CMOS.
IEEE Trans. Circuits Syst. I Regul. Pap.
|
| 2015 | — | conf |
ASICON
|
| 2015 | — | conf |
IOV
|
| 2015 | — | conf |
ASICON
|
| 2015 | J | jnl |
EURASIP J. Wirel. Commun. Netw.
|
| 2014 | J | jnl |
IEEE J. Solid State Circuits
|
| 2014 | J | jnl |
Introduction to the Special Section on the 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
IEEE J. Solid State Circuits
|
| 2014 | C | conf |
ISCAS
|
| 2013 | — | conf |
ASICON
|
| 2013 | C | conf |
ISCAS
|
| 2013 | C | conf |
ISCAS
|
| 2013 | — | conf |
CICC
|
| 2013 | J | jnl |
Sci. China Inf. Sci.
|
| 2013 | — | conf |
CICC
|
| 2013 | C | conf |
ISCAS
|
| 2013 | — | conf |
ASICON
|
| 2013 | A | conf |
ISLPED
|
| 2013 | J | jnl |
J. Circuits Syst. Comput.
|
| 2013 | J | jnl |
IEEE J. Solid State Circuits
|
| 2013 | — | conf |
ASICON
|
| 2013 | — | conf |
CICC
|
| 2012 | — | conf |
MWSCAS
|
| 2012 | — | conf |
CICC
|
| 2011 | J | jnl |
Sci. China Inf. Sci.
|
| 2011 | J | jnl |
J. Low Power Electron.
|
| 2011 | J | jnl |
IEEE J. Solid State Circuits
|
| 2011 | J | jnl |
IEEE Trans. Ind. Electron.
|
| 2011 | J | jnl |
Sci. China Inf. Sci.
|
| 2010 | J | jnl |
IEEE Trans. Ind. Electron.
|
| 2010 | J | jnl |
IEEE Trans. Ind. Electron.
|
| 2009 | C | conf |
ISCAS
|
| 2007 | C | conf |
A Varying Pulse Width Second Order Derivative Gaussian Pulse Generator for UWB Transceivers in CMOS.
ISCAS
|
| 2006 | C | conf |
ISCAS
|
| 2006 | — | conf |
SoCC
|
| 2005 | — | conf |
ISCAS (6)
|
| 2005 | — | conf |
ISCAS (5)
|
| 2005 | — | conf |
CICC
|
| 2005 | — | conf |
ASP-DAC
|
| 2005 | — | conf |
CICC
|
| 2004 | — | conf |
CICC
|
| 2004 | — | conf |
ASP-DAC
|
| 2004 | — | conf |
ISCAS (5)
|
| 2004 | J | jnl |
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
|
| 2004 | — | conf |
ISCAS (5)
|
| 2003 | — | conf |
ISCAS (1)
|
| 2003 | J | jnl |
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
|
| 2003 | — | conf |
ISCAS (4)
|
| 2003 | — | conf |
ASP-DAC
|
| 2002 | A | conf |
ICCAD
|
| 2002 | — | conf |
CICC
|
| 2001 | — | conf |
CICC
|
| 2000 | — | conf |
CICC
|
| 1999 | — | conf |
CICC
|