Akinobu Teramoto

13 papers Journal 6Unranked 7
YearRankTypeTitle / Venue / Authors
2020 — conf
Effect of Drain-to-Source Voltage on Random Telegraph Noise Based on Statistical Analysis of MOSFETs with Various Gate Shapes.
IRPS
Ryo Akimoto, Rihito Kuroda, Akinobu Teramoto, Takezo Mawaki, Shinya Ichino, Tomoyuki Suwa, Shigetoshi Sugawa
2018 — conf
An Electrical Impedance Biosensor Array for Tracking Moving Cells.
IEEE SENSORS
Norichika Ogata, Akihisa Shina, Takayuki Komiya, Yoji Iizuka, Ken Matsuse, Fuminobu Imaizumi, Tomoyuki Suwa, Akinobu Teramoto
2018 — conf
Reliability of MgO in magnetic tunnel junctions formed by MgO sputtering and Mg oxidation.
IRPS
Akinobu Teramoto, Keiichi Hashimoto, Tomoyuki Suwa, Jun-ichi Tsuchimoto, Marie Hayashi, Hyeonwoo Park, Shigetoshi Sugawa
2014 — conf
A statistical evaluation of effective time constants of random telegraph noise with various operation timings of in-pixel source follower transistors.
IMSE
A. Yonezawa, Rihito Kuroda, Akinobu Teramoto, T. Obara, Shigetoshi Sugawa
2013 — conf
A statistical evaluation of low frequency noise of in-pixel source follower-equivalent transistors with various channel types and body bias.
Sensors, Cameras, and Systems for Industrial and Scientific Applications
Rihito Kuroda, A. Yonezawa, Akinobu Teramoto, T. L. Li, Yasuhisa Tochigi, Shigetoshi Sugawa
2013 — conf
High-speed and highly accurate evaluation of electrical characteristics in MOSFETs.
ICICDT
Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi
2012 — conf
The role of the temperature on the scattering mechanisms limiting the electron mobility in metal-oxide-semiconductor field-effect-transistors fabricated on (110) silicon-oriented wafers.
ESSDERC
Philippe Gaubert, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi
2009 J jnl
Data Analysis Technique of Atomic Force Microscopy for Atomically Flat Silicon Surfaces.
IEICE Trans. Electron.
Masahiro Konda, Akinobu Teramoto, Tomoyuki Suwa, Rihito Kuroda, Tadahiro Ohmi
2008 J jnl
Accurate negative bias temperature instability lifetime prediction based on hole injection.
Microelectron. Reliab.
Akinobu Teramoto, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi
2007 J jnl
Circuit level prediction of device performance degradation due to negative bias temperature stress.
Microelectron. Reliab.
Rihito Kuroda, Akinobu Teramoto, Kazufumi Watanabe, Michihiko Mifuji, Takahisa Yamaha, Shigetoshi Sugawa, Tadahiro Ohmi
2007 J jnl
Examination of degradation mechanism due to negative bias temperature stress from a perspective of hole energy for accurate lifetime prediction.
Microelectron. Reliab.
Kazufumi Watanabe, Akinobu Teramoto, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi
2007 J jnl
High quality gate insulator film formation on SiC using by microwave-excited high-density plasma.
Microelectron. Reliab.
Koutarou Tanaka, Hiroaki Tanaka, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi
2001 J jnl
Time-dependent dielectric breakdown of SiO
Microelectron. Reliab.
Akinobu Teramoto, H. Umeda, K. Azamawari, Kiyoteru Kobayashi, K. Shiga, J. Komori, Y. Ohno, A. Shigetomi