Adrian Vaisman Chasin

39 papers Journal 3Unranked 36

Year	Rank	Type	Title / Venue / Authors
2025	—	`conf`	Dielectric Breakdown Analysis on Bottom and Top-Gated IGZO-TFT. IRPS Simon Van Beek, Adrian Vaisman Chasin, Subhali Subhechha, Harold Dekkers, Nouredine Rassoul, Yiqun Wan, Hongwei Tang, Joao P. Bastos, Attilio Belmonte, Gouri Sankar Kar
2025	—	`conf`	Evolution of GaN HEMT Small-Signal Parameters During Semi-on State for RF/MM-Wave Applications. IRPS Aarti Rathi, Barry J. O'Sullivan, Rana ElKashlan, B. Kazemi Esfeh, Arturo Sibaja Hernandez, Hao Yu, AliReza Alian, Sachin Yadav, Uthayasankaran Peralagu, Adrian Vaisman Chasin, Bertrand Parvais, Nadine Collaert
2025	—	`conf`	Impact of Mechanical Stress on IGZO TFTs: Enhancing PBTI Degradation. IRPS K. Vishwakarma, K. Lee, Anastasiia Kruv, Adrian Vaisman Chasin, Michiel J. van Setten, C. Pashartis, Oguzhan O. Okudur, M. Gonzalez, Nouredine Rassoul, A. Belmonte, Bem Kaczer
2024	—	`conf`	DC Reliability Study of $\text{high}-\kappa$ GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers. IRPS Barry J. O'Sullivan, AliReza Alian, Arturo Sibaja Hernandez, Jacopo Franco, Sachin Yadav, Hao Yu, Aarti Rathi, Uthayasankaran Peralagu, Adrian Vaisman Chasin, Bertrand Parvais, Nadine Collaert
2024	—	`conf`	Fundamental understanding of NBTI degradation mechanism in IGZO channel devices. IRPS Ying Zhao, Pietro Rinaudo, Adrian Vaisman Chasin, Brecht Truijen, Ben Kaczer, Nouredine Rassoul, Harold Dekkers, Attilio Belmonte, Ingrid De Wolf, Gouri Sankar Kar, Jacopo Franco
2024	—	`conf`	Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance. IRPS Yusuke Higashi, J. P. Bastos, Adrian Vaisman Chasin, Laurent Breuil, Antonio Arreghini, S. Ramesh, S. Rachidi, Y. Jeong, Geert Van den Bosch, Maarten Rosmeulen
2024	—	`conf`	Light-Assisted Investigation of the Role of Oxygen Flow during IGZO Deposition on Deep Subgap States and their Evolution Under PBTI. IRPS Pietro Rinaudo, Adrian Vaisman Chasin, Ying Zhao, Ben Kaczer, Nouredine Rassoul, Harold Dekkers, Michiel J. van Setten, Attilio Belmonte, Ingrid De Wolf, Gouri Sankar Kar, Jacopo Franco
2024	—	`conf`	Side and Corner Region Non-Uniformities in Grown SiO2 and Their Implications on Current, Capacitance and Breakdown Characteristics. IRPS J. P. Bastos, Barry J. O'Sullivan, Yusuke Higashi, Adrian Vaisman Chasin, Jacopo Franco, Hiroaki Arimura, J. Ganguly, Elena Capogreco, Alessio Spessot, N. Horiguchi
2023	—	`conf`	Lowest IOFF < 3×10 VLSI Technology and Circuits Attilio Belmonte, Shreya Kundu, S. Subhechha, Adrian Vaisman Chasin, Nouredine Rassoul, Harold Dekkers, H. Puliyalil, F. Seidel, P. Carolan, Romain Delhougne, Gouri Sankar Kar
2023	—	`conf`	MTJ degradation in multi-pillar SOT-MRAM with selective writing. IRPS Simon Van Beek, Kaiming Cai, Kaiquan Fan, Giacomo Talmelli, Anna Trovato, Nico Jossart, Siddharth Rao, Adrian Vaisman Chasin, Sebastien Couet
2022	—	`conf`	Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery. IRPS J. P. Bastos, Barry J. O'Sullivan, Jacopo Franco, Stanislav Tyaginov, Brecht Truijen, Adrian Vaisman Chasin, Robin Degraeve, Ben Kaczer, Romain Ritzenthaler, Elena Capogreco, E. Dentoni Litta, Alessio Spessot, Yusuke Higashi, Y. Yoon, V. Machkaoutsan, Pierre Fazan, N. Horiguchi
2022	—	`conf`	Degradation mechanism of amorphous IGZO-based bipolar metal-semiconductor-metal selectors. IRPS Taras Ravsher, Andrea Fantini, Adrian Vaisman Chasin, Shamin H. Sharifi, Hubert Hody, Harold Dekkers, Thomas Witters, Jan Van Houdt, Valeri Afanas'ev, Sebastien Couet, Gouri Sankar Kar
2022	—	`conf`	Device engineering guidelines for performance boost in IGZO front gated TFTs based on defect control. ICICDT S. Subhechha, Nouredine Rassoul, Attilio Belmonte, Hubert Hody, Harold Dekkers, Michiel J. van Setten, Adrian Vaisman Chasin, Shamin H. Sharifi, K. Banerjee, H. Puliyalil, Shreya Kundu, M. Pak, D. Tsvetanova, Nina Bazzazian, Kevin Vandersmissen, D. Batuk, J. Geypen, J. Heijlen, Romain Delhougne, Gouri Sankar Kar
2022	—	`conf`	Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets. IRPS Erik Bury, Adrian Vaisman Chasin, Ben Kaczer, Michiel Vandemaele, Stanislav Tyaginov, Jacopo Franco, Romain Ritzenthaler, Hans Mertens, Pieter Weckx, N. Horiguchi, Dimitri Linten
2022	—	`conf`	MTJ degradation in SOT-MRAM by self-heating-induced diffusion. IRPS Simon Van Beek, Kaiming Cai, Siddharth Rao, Ganesh Jayakumar, Sebastien Couet, Nico Jossart, Adrian Vaisman Chasin, Gouri Sankar Kar
2022	—	`conf`	Modelling ultra-fast threshold voltage instabilities in Hf-based ferroelectrics. IRPS Barry J. O'Sullivan, Brecht Truijen, Vamsi Putcha, Alexander Grill, Adrian Vaisman Chasin, Geert Van den Bosch, Ben Kaczer, Md Nur K. Alam, Jan Van Houdt
2022	—	`conf`	Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs. IRPS Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Erik Bury, Adrian Vaisman Chasin, Jacopo Franco, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken
2022	—	`conf`	Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors. IRPS Alexander Grill, V. John, Jakob Michl, A. Beckers, Erik Bury, Stanislav Tyaginov, Bertrand Parvais, Adrian Vaisman Chasin, Tibor Grasser, Michael Waltl, Ben Kaczer, Bogdan Govoreanu
2022	—	`conf`	Trap-polarization interaction during low-field trap characterization on hafnia-based ferroelectric gatestacks. IRPS Brecht Truijen, Barry J. O'Sullivan, Md. Nurul Alam, Dieter Claes, Mischa Thesberg, Philippe Roussel, Adrian Vaisman Chasin, Geert Van den Bosch, Ben Kaczer, Jan Van Houdt
2022	—	`conf`	Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm. VLSI Technology and Circuits S. Subhechha, Nouredine Rassoul, Attilio Belmonte, Hubert Hody, Harold Dekkers, Michiel J. van Setten, Adrian Vaisman Chasin, Shamin H. Sharifi, S. Sutar, L. Magnarin, Umberto Celano, H. Puliyalil, Shreya Kundu, M. Pak, Lieve Teugels, D. Tsvetanova, Nina Bazzazian, Kevin Vandersmissen, C. Biasotto, D. Batuk, J. Geypen, J. Heijlen, Romain Delhougne, Gouri Sankar Kar
2022	—	`conf`	Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors. IRPS Stanislav Tyaginov, Alexander Makarov, Al-Moatasem Bellah El-Sayed, Adrian Vaisman Chasin, Erik Bury, Markus Jech, Michiel Vandemaele, Alexander Grill, An De Keersgieter, Mikhail I. Vexler, Geert Eneman, Ben Kaczer
2021	—	`conf`	Process-induced charging damage in IGZO nTFTs. IRPS Gaspard Hiblot, Nouredine Rassoul, Lieve Teugels, Katia Devriendt, Adrian Vaisman Chasin, Michiel J. van Setten, Attilio Belmonte, Romain Delhougne, Gouri Sankar Kar
2021	—	`conf`	The properties, effect and extraction of localized defect profiles from degraded FET characteristics. IRPS Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Jacopo Franco, Robin Degraeve, Adrian Vaisman Chasin, Zhicheng Wu, Erik Bury, Yang Xiang, Hans Mertens, Guido Groeseneken
2020	—	`conf`	Conduction and Breakdown Mechanisms in Low-k Spacer and Nitride Spacer Dielectric Stacks in Middle of Line Interconnects. IRPS Chen Wu, Adrian Vaisman Chasin, Steven Demuynck, Naoto Horiguchi, Kris Croes
2020	—	`conf`	Relevance of fin dimensions and high-pressure anneals on hot-carrier degradation. IRPS Adrian Vaisman Chasin, Jacopo Franco, Erik Bury, Romain Ritzenthaler, Eugenio Dentoni Litta, Alessio Spessot, Naoto Horiguchi, Dimitri Linten, Ben Kaczer
2019	—	`conf`	Array-Based Statistical Characterization of CMOS Degradation Modes and Modeling of the Time-Dependent Variability Induced by Different Stress Patterns in the {V IRPS Erik Bury, Adrian Vaisman Chasin, Michiel Vandemaele, Simon Van Beek, Jacopo Franco, Ben Kaczer, Dimitri Linten
2019	—	`conf`	Full (V IRPS Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Zlatan Stanojevic, Alexander Makarov, Adrian Vaisman Chasin, Erik Bury, Hans Mertens, Dimitri Linten, Guido Groeseneken
2019	—	`conf`	Impact of Device Architecture and Gate Stack Processing on the Low-Frequency Noise of Silicon Nanowire Transistors. ASICON Eddy Simoen, Alberto Vinicius Oliveira, Anabela Veloso, Adrian Vaisman Chasin, Romain Ritzenthaler, Hans Mertens, Naoto Horiguchi, Cor Claeys
2019	—	`conf`	Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs. IRPS Alexander Makarov, Ben Kaczer, Philippe Roussel, Adrian Vaisman Chasin, Alexander Grill, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Tibor Grasser, Dimitri Linten, Stanislav Tyaginov
2019	—	`conf`	Role of Defects in the Reliability of HfO2/Si-Based Spacer Dielectric Stacks for Local Interconnects. IRPS Chen Wu, Adrian Vaisman Chasin, Andrea Padovani, Alicja Lesniewska, Steven Demuynck, Kris Croes
2019	—	`conf`	Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants. ESSDERC Alexander Makarov, Dimitri Linten, Stanislav Tyaginov, Ben Kaczer, Philippe Roussel, Adrian Vaisman Chasin, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Markus Jech, Tibor Grasser
2018	J	`jnl`	A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability. Microelectron. Reliab. Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Vamsi Putcha, Erik Bury, Marko Simicic, Adrian Vaisman Chasin, Dimitri Linten, Bertrand Parvais, Francky Catthoor, Gerhard Rzepa, Michael Waltl, Tibor Grasser
2018	—	`conf`	Hot electron and hot hole induced degradation of SiGe p-FinFETs studied by degradation maps in the entire bias space. IRPS Jacopo Franco, Ben Kaczer, Adrian Vaisman Chasin, Erik Bury, Dimitri Linten
2018	—	`conf`	New methodology for modelling MOL TDDB coping with variability. IRPS Philippe J. Roussel, Adrian Vaisman Chasin, Steven Demuynck, Naoto Horiguchi, Dimitri Linten, Anda Mocuta
2018	—	`conf`	Self-heating-aware CMOS reliability characterization using degradation maps. IRPS Erik Bury, Adrian Vaisman Chasin, Ben Kaczer, Kai-Hsin Chuang, Jacopo Franco, Marko Simicic, Pieter Weckx, Dimitri Linten
2014	—	`conf`	Impact of etch stop layer on negative bias illumination stress of amorphous Indium Gallium Zinc Oxide transistors. ESSDERC Ajay Bhoolokam, Manoj Nag, Adrian Vaisman Chasin, Soeren Steudel, Jan Genoe, Gerwin H. Gelinck, Guido Groeseneken, Paul Heremans
2012	—	`conf`	Bidirectional communication in an HF hybrid organic/solution-processed metal-oxide RFID tag. ISSCC Kris Myny, Maarten Rockele, Adrian Vaisman Chasin, Duy-Vu Pham, Jürgen Steiger, Silviu Botnaras, Dennis Weber, Bernhard Herold, Jürgen Ficker, Bas van der Putten, Gerwin H. Gelinck, Jan Genoe, Wim Dehaene, Paul Heremans
2009	J	`jnl`	Robust model reduction of uncertain systems maintaining uncertainty structure. Int. J. Control Eduardo N. Gonçalves, Reinaldo M. Palhares, Ricardo H. C. Takahashi, Adrian Vaisman Chasin
2008	J	`jnl`	A High Power Density Electrostatic Vibration-to-Electric Energy Converter Based On An In-Plane Overlap Plate (IPOP) Mechanism CoRR Ayyaz Mahmood Paracha, Philippe Basset, Frédéric Marty, Adrian Vaisman Chasin, Patrick Poulichet, Tarik Bourouina